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公开(公告)号：US4905072A
公开(公告)日：1990-02-27
申请号：US188677
申请日：1988-04-29
申请人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： H01L21/306 , H01L29/04
CPC分类号： H01L29/04 , H01L21/30604 , H01L2924/0002
摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
摘要翻译： 半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。 它也可能具有20安培/秒的蚀刻速率。 当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。
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公开(公告)号：US4851302A
公开(公告)日：1989-07-25
申请号：US221761
申请日：1988-07-20
申请人： Katsumi Nakagawa , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Masahiro Kanai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Masahiro Kanai
IPC分类号： H01L31/04 , G06F9/48 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02963 , H01L21/0237 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/0392 , H01L31/068 , H01L31/1828 , Y02E10/543 , Y02E10/547 , Y10T428/12528 , Y10T428/12792
摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.
摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。
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公开(公告)号：US4670369A
公开(公告)日：1987-06-02
申请号：US872935
申请日：1986-06-11
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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公开(公告)号：US4667214A
公开(公告)日：1987-05-19
申请号：US621630
申请日：1984-06-18
申请人： Nobuyuki Sekimura , Masaki Fukaya , Katsumi Nakagawa , Toshiyuki Komatsu , Tatsumi Shoji , Teruhiko Furushima
发明人： Nobuyuki Sekimura , Masaki Fukaya , Katsumi Nakagawa , Toshiyuki Komatsu , Tatsumi Shoji , Teruhiko Furushima
IPC分类号： H01L31/0392 , H01L31/09 , H01L27/14 , H01L31/00
CPC分类号： H01L31/095 , H01L31/03921 , Y02E10/50
摘要： A photosensor comprises a glass substrate, a photoelectric converting layer comprising a silicon-based amorphous material, and a pair of electrode layers in electrical contact with the photoelectric converting layer, wherein one or both sides of the glass substrate are covered with dielectric layers and the photoelectric converting layer is formed upon the dielectric layer.
摘要翻译： 光传感器包括玻璃基板，包括硅基非晶材料的光电转换层和与光电转换层电接触的一对电极层，其中玻璃基板的一侧或两侧被电介质层覆盖，并且 在电介质层上形成光电转换层。
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155.发明授权Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon 失效具有包含碳的氢化非晶光电导层的电子照相图像形成部件
公开(公告)号：US4664998A
公开(公告)日：1987-05-12
申请号：US790155
申请日：1985-10-22
CPC分类号： G03G5/08235 , G03G5/08221 , G03G5/08292
摘要： An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
摘要翻译： 用于电摄影的图像形成部件具有光电导层，该光电导层包括由硅和/或锗作为基质构成的氢化非晶半导体和基质中所含的至少一种化学改性剂，例如碳，氮和氧。
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156.发明授权Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine 失效具有0.01〜5原子％氯的多晶硅层的薄膜晶体管
公开(公告)号：US4625224A
公开(公告)日：1986-11-25
申请号：US456717
申请日：1983-01-10
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： H01L29/78 , G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/786 , H01L49/02
CPC分类号： H01L29/78684 , H01L29/04 , H01L29/78675
摘要： A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.
摘要翻译： 具有含有0.01〜5原子％的氯原子的多晶硅半导体层的主要部分的半导体元件。
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157.发明授权
公开(公告)号：US4552824A
公开(公告)日：1985-11-12
申请号：US695428
申请日：1985-01-28
IPC分类号： C23C14/00 , C23C14/16 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/507 , C23C16/509 , G03G5/082 , H01L31/09 , H01L31/20
CPC分类号： C23C14/16 , C23C14/0036 , C23C14/0057 , C23C16/24 , C23C16/45523 , C23C16/507 , C23C16/509 , G03G5/08221 , G03G5/08228 , G03G5/08242 , G03G5/08278 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要翻译： 使用含有H，优选10-40原子％H的非晶硅层作为电子照相感光构件的光电导层。
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公开(公告)号：US4461819A
公开(公告)日：1984-07-24
申请号：US269846
申请日：1981-06-03
CPC分类号： H01L31/202 , G03G5/08235 , G03G5/0825 , Y02E10/50 , Y02P70/521
摘要： Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
摘要翻译： 用于电子照相的图像形成部件包括由氢化非晶硅构成的电荷产生层。
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