公开(公告)号：US20150234738A1

公开(公告)日：2015-08-20

申请号：US14566411

申请日：2014-12-10

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Craig E. Hampel

IPC: G06F12/02

CPC classification number: G06F12/02 ,  G06F12/0292

Abstract: Improvements are disclosed for “leveling” or averaging out more evenly the number of activate/precharge cycles seen by the rows of a memory component, so that one or more particular rows are not excessively stressed (relative to the other rows). In one embodiment, a memory controller includes remapping facilities arranged to move data stored in a physical row from RPK to RPK′ and modify the mapping from logical row RLK while minimizing impact on normal read/write operations. Remapping operations may be scheduled relative to refresh or other maintenance operations. Remapping operations may be conditionally deferred so as to minimize performance impact.

Abstract translation: 公开了用于“调平”或平均化更多地平均化由存储器组件的行看到的激活/预充电循环的数量的改进，使得一个或多个特定行不会被过度压缩（相对于其他行）。 在一个实施例中，存储器控制器包括重新配置设备，用于将存储在物理行中的数据从RPK移动到RPK，并修改来自逻辑行RLK的映射，同时最小化对正常读/写操作的影响。 可以相对于刷新或其他维护操作调度重新映射操作。 重新映射操作可以有条件地推迟，以便最小化性能影响。

公开(公告)号：US09053778B2

公开(公告)日：2015-06-09

申请号：US14104188

申请日：2013-12-12

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Richard E. Perego ,  Craig E. Hampel

IPC: G11C11/00 ,  G11C7/22 ,  G06F13/16 ,  G06F13/40 ,  G11C5/06 ,  G11C29/02 ,  G11C29/50 ,  G11C8/18 ,  G06F1/10 ,  G11C11/4076 ,  G11C11/409

CPC classification number: G11C11/4076 ,  G06F1/06 ,  G06F1/105 ,  G06F1/12 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0673 ,  G06F13/1684 ,  G06F13/1689 ,  G06F13/1694 ,  G06F13/4086 ,  G11C5/063 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/22 ,  G11C7/222 ,  G11C8/18 ,  G11C11/409 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012

Abstract: A memory controller outputs a clock signal to first and second DRAMs disposed on a memory module, the clock signal requiring respective first and second time intervals to propagate to the first and second DRAMs. The memory controller outputs a write command to be sampled by the first and second DRAMs at times indicated by the first clock signal and outputs, in association with the write command, first and second write data to the first and second DRAMs, respectively. The memory controller further outputs first and second strobe signals respectively to the first and second DRAMs, the first strobe signal to time reception of the first and second write data therein. The memory controller adjusts respective transmission times of the first and second strobe signals to be offset from one another by a time interval that corresponds to a difference between the first and second time intervals.

Abstract translation: 存储器控制器将时钟信号输出到设置在存储器模块上的第一和第二DRAM，所述时钟信号需要相应的第一和第二时间间隔来传播到第一和第二DRAM。 存储器控制器在由第一时钟信号指示的时间输出由第一和第二DRAM采样的写入命令，并且与写入命令相关联地分别将第一和第二写入数据输出到第一和第二DRAM。 存储器控制器还分别向第一和第二DRAM输出第一和第二选通信号，第一选通信号在其中时间接收第一和第二写入数据。 存储器控制器将第一和第二选通信号的相应传输时间调整为相应于第一和第二时间间隔之间的差的时间间隔彼此偏移。

公开(公告)号：US20150089163A1

公开(公告)日：2015-03-26

申请号：US14558517

申请日：2014-12-02

Applicant: Rambus Inc.

Inventor： Craig E. Hampel ,  Frederick A. Ware

IPC: G06F13/16

CPC classification number: G06F13/1642 ,  G06F12/1081 ,  G06F13/1663 ,  G06F13/1678 ,  G06F13/1684 ,  G06F13/28 ,  G06F13/4243 ,  G06F2212/656 ,  G11C5/04 ,  G11C7/1012 ,  G11C7/1045 ,  G11C7/1075 ,  H05K1/181 ,  H05K2201/09227 ,  H05K2201/10159 ,  Y02D10/14 ,  Y02D10/151 ,  Y02P70/611

Abstract: A memory module having reduced access granularity. The memory module includes a substrate having signal lines thereon that form a control path and first and second data paths, and further includes first and second memory devices coupled in common to the control path and coupled respectively to the first and second data paths. The first and second memory devices include control circuitry to receive respective first and second memory access commands via the control path and to effect concurrent data transfer on the first and second data paths in response to the first and second memory access commands.

Abstract translation: 具有减小的访问粒度的存储器模块。 存储器模块包括其上具有信号线的衬底，其形成控制路径和第一和第二数据路径，并且还包括共同耦合到控制路径并分别耦合到第一和第二数据路径的第一和第二存储器件。 第一和第二存储器件包括控制电路，用于响应于第一和第二存储器访问命令，经由控制路径接收相应的第一和第二存储器访问命令并且执行第一和第二数据路径上的并发数据传输。

公开(公告)号：US20140293671A1

公开(公告)日：2014-10-02

申请号：US14306304

申请日：2014-06-17

Applicant: Rambus Inc.

Inventor： Richard E. Perego ,  Donald C. Stark ,  Frederick A. Ware ,  Ely K. Tsern ,  Craig E. Hampel

IPC: G11C5/04 ,  G11C5/06

CPC classification number: G06F13/1678 ,  G06F12/04 ,  G06F12/06 ,  G06F12/0646 ,  G06F13/1657 ,  G06F13/4022 ,  G11C5/02 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1006 ,  G11C7/1045 ,  G11C7/1048 ,  G11C7/106 ,  G11C7/1072 ,  G11C7/1087 ,  G11C8/06 ,  G11C11/4087 ,  G11C11/4097 ,  G11C2207/105 ,  G11C2207/108 ,  H05K1/117 ,  H05K1/14 ,  H05K2201/09954 ,  H05K2201/10189 ,  Y02D10/14

Abstract: Describes is a memory system that utilizes motherboard traces in a way that permits maximum utilization of system data lines while accommodating varying numbers of memory modules. It is possible in a system such as this to utilize all individual sets of point-to-point signaling lines, even when less than all of the available memory sockets are occupied. Memory modules with configurable data widths support a relatively wide mode in which one module utilizes all available system data lines, or a relatively narrow mode in which multiple, narrower modules split the available system data lines between them.

Abstract translation: 描述的是一种以允许最大限度利用系统数据线同时容纳不同数量的存储器模块的方式利用母板轨迹的存储器系统。 即使在少于所有可用的存储器插槽被占用的情况下，这样的系统也可以利用所有单独的点对点信令线集合。 具有可配置数据宽度的内存模块支持相对宽的模式，其中一个模块使用所有可用的系统数据线，或者相对较窄的模式，其中多个较窄的模块在其间分开可用的系统数据线。

公开(公告)号：US08760944B2

公开(公告)日：2014-06-24

申请号：US13923656

申请日：2013-06-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Richard E. Perego ,  Craig E. Hampel

IPC: G11C7/00

CPC classification number: G11C11/4076 ,  G06F1/06 ,  G06F1/105 ,  G06F1/12 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0673 ,  G06F13/1684 ,  G06F13/1689 ,  G06F13/1694 ,  G06F13/4086 ,  G11C5/063 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/22 ,  G11C7/222 ,  G11C8/18 ,  G11C11/409 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012

Abstract: A memory component has a signaling interface, data input/output (I/O) circuitry and command/address (CA) circuitry. The signaling interface includes an on-die terminated data I/O and an unterminated CA input. The data I/O circuitry is dedicated to sampling write data bits at the data I/O timed by a strobe signal and to transmitting read data bits timed by a first clock signal, each of the write and read data bits being valid for a bit time at the data I/O. The CA circuitry samples CA signals at the CA input in response to both rising-edge and falling-edge transitions of a second clock signal, the CA signals indicating read and write operations to be performed within the memory component.

Abstract translation: 存储器组件具有信令接口，数据输入/输出（I / O）电路和命令/地址（CA）电路。 信令接口包括片上终端数据I / O和未终止的CA输入。 数据I / O电路专用于以由选通信号定时的数据I / O对写入数据位进行采样，并发送由第一时钟信号定时的读取数据位，每个写入和读取数据位对于位有效 时间在数据I / O。 CA电路响应于第二时钟信号的上升沿和下降沿转换在CA输入端采样CA信号，CA信号指示要在存储器组件内执行的读和写操作。

公开(公告)号：US08707110B1

公开(公告)日：2014-04-22

申请号：US14020755

申请日：2013-09-06

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Craig E. Hampel

IPC: G06F11/00

CPC classification number: G06F11/1004 ,  G06F11/0703 ,  G06F11/073 ,  G06F11/1679 ,  H03M13/09

Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation.

Abstract translation: 提供了用于检测和校正存储器系统中的地址错误的系统和方法。 在存储器系统中，存储器件基于通过地址总线发送的地址生成错误检测码，并将错误检测码发送到存储器控制器。 存储器控制器响应于错误检测码向存储器件发送错误指示。 错误指示使存储器件移除接收的地址并防止存储器操作。

公开(公告)号：US20140068169A1

公开(公告)日：2014-03-06

申请号：US13923184

申请日：2013-06-20

Applicant: Rambus Inc.

Inventor： Frederick Ware ,  Craig E. Hampel ,  Ian Shaeffer ,  Scott C. Best

IPC: G11C7/10

CPC classification number: G11C7/1072 ,  G06F13/1684 ,  G06F13/4234 ,  G11C5/00

Abstract: A memory module includes a substrate having signal lines thereon that form a control path and a plurality of data paths. A plurality of memory devices are mounted on the substrate. Each memory device is coupled to the control path and to a distinct data path. The memory module includes control circuitry to enable each memory device to process a distinct respective memory access command in a succession of memory access commands and to output data on the distinct data path in response to the processed memory access command.

Abstract translation: 存储器模块包括其上具有信号线的衬底，其形成控制路径和多个数据路径。 多个存储器件安装在基片上。 每个存储器件耦合到控制路径和不同的数据路径。 存储器模块包括控制电路，以使得每个存储器设备能够在一系列存储器访问命令中处理不同的相应存储器访问命令，并且响应于处理的存储器访问命令在不同的数据路径上输出数据。

公开(公告)号：US20140032830A1

公开(公告)日：2014-01-30

申请号：US13949982

申请日：2013-07-24

Applicant: Rambus Inc.

Inventor： Craig E. Hampel ,  Richard S. Perego ,  Stefanos Sidiropoulos ,  Ely K. Tsern ,  Frederick A. Ware

IPC: G11C11/406 ,  G11C21/00

CPC classification number: G11C11/4076 ,  G06F3/061 ,  G06F3/0629 ,  G06F3/0671 ,  G06F12/0246 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222 ,  G11C11/40611 ,  G11C11/4072 ,  G11C11/4078 ,  G11C11/4093 ,  G11C21/00 ,  G11C2207/2254 ,  H04L7/0025 ,  H04L7/0079 ,  H04L7/0091

Abstract: A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration.

Abstract translation: 存储器组件包括包含动态随机存取存储器（DRAM）存储单元的存储器核心和用于接收外部命令的第一电路。 外部命令包括指定发送从存储器核心访问的数据的读取命令。 存储器组件还包括响应于读取命令和在校准期间可操作以提供至少第一数据模式和第二数据模式的读取命令和模式寄存器电路将数据发送到外部总线的第二电路。 在校准期间，第一数据模式和第二数据模式中的所选择的一个被响应于在校准期间接收到的读命令，被第二电路发送到外部总线上。

公开(公告)号：US20130250706A1

公开(公告)日：2013-09-26

申请号：US13899844

申请日：2013-05-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Richard E. Perego ,  Craig E. Hampel

IPC: G11C8/18

CPC classification number: G11C11/4076 ,  G06F1/06 ,  G06F1/105 ,  G06F1/12 ,  G06F3/0604 ,  G06F3/0658 ,  G06F3/0673 ,  G06F13/1684 ,  G06F13/1689 ,  G06F13/1694 ,  G06F13/4086 ,  G11C5/063 ,  G11C7/04 ,  G11C7/1051 ,  G11C7/1072 ,  G11C7/1078 ,  G11C7/22 ,  G11C7/222 ,  G11C8/18 ,  G11C11/409 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50008 ,  G11C29/50012

Abstract: A memory module having memory components, a termination structure, an address/control signal path, a clock signal path, multiple data signal paths and multiple strobe signal paths. The strobe signal paths and data signal paths are coupled to respective memory components, and the address/control signal path and clock signal path are coupled in common to all the memory components. The address/control signal path extends along the memory components to the termination structure such that control signals propagating toward the termination structure arrive at address/control inputs of respective memory components at progressively later times corresponding to relative positions of the memory components.

Abstract translation: 具有存储器组件，终端结构，地址/控制信号路径，时钟信号路径，多个数据信号路径和多个选通信号路径的存储器模块。 选通信号路径和数据信号路径被耦合到相应的存储器组件，并且地址/控制信号路径和时钟信号路径共同耦合到所有存储器组件。 地址/控制信号路径沿着存储器组件延伸到终端结构，使得朝着终端结构传播的控制信号在对应于存储器组件的相对位置的逐渐更新的时间到达各个存储器组件的地址/控制输入。