公开(公告)号：US5837331A

公开(公告)日：1998-11-17

申请号：US614703

申请日：1996-03-13

Applicant: Eric P. Menu ,  John Song ,  Bernard F. Coll

Inventor： Eric P. Menu ,  John Song ,  Bernard F. Coll

IPC: C23C14/06 ,  C23C14/54 ,  C23C16/34 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H05H1/24 ,  B05D1/36 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/342 ,  C23C14/0605 ,  C23C14/548 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/319

Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Abstract translation: 通过包括以下步骤的方法形成非晶多层结构（100,200）：i）将沉积基板（101）定位在物理气相沉积设备（300,400,500）中，ii）将 物理气相沉积装置（300,400,500）内的多相材料iv）调节离子的总离子冲击能量以沉积具有对应于总离子冲击能量值的预定特性的层。

公开(公告)号：US5836796A

公开(公告)日：1998-11-17

申请号：US548039

申请日：1995-10-25

Applicant: Joel Danroc

Inventor： Joel Danroc

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Process for the production of a field effect electron source and source obtained by said process, application to display means by cathodoluminescence. On an insulating substrate (2), said source comprises at least one cathode conductor (4), an insulating layer (6) covering the latter, at least one grid (8) formed on the insulating layer, holes (10) being formed through said grid and the insulating layer, and microtips (12) made from an electron emitting, metallic material, formed in said holes and covered with a deposit (13) of carbon diamond or diamond like carbon particles formed by electrophoresis or by joint electrochemical deposition of metal and carbon diamond or diamond like carbon.

Abstract translation: 用于生产通过所述方法获得的场效应电子源和源的方法，通过阴极发光应用于显示装置。 在绝缘基板（2）上，所述源极包括至少一个阴极导体（4），覆盖其上的绝缘层（6），形成在绝缘层上的至少一个格栅（8），穿过 所述栅格和绝缘层，以及由电子发射金属材料制成的微尖端（12），形成在所述孔中并覆盖有通过电泳形成的碳金刚石或类金刚石碳颗粒沉积物（13），或通过电化学沉积 金属和碳金刚石或类似钻石的碳。

公开(公告)号：US5828162A

公开(公告)日：1998-10-27

申请号：US546396

申请日：1995-10-20

Applicant: Joel Danroc ,  Danh Tran Van

Inventor： Joel Danroc ,  Danh Tran Van

IPC: H01J31/12 ,  G09F9/313 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J19/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A field effect electron source includes a grid electrode formed over an insulating layer that covers a cathode electrode formed on an insulating substrate. Holes are provided in the grid electrode-insulating layer structure, the holes extending to the cathode electrode formed on the insulating substrate. Electron emitting microheaps are formed within the holes above the exposed portions of the cathode electrode on the substrate. These microheaps each include at least a macropile of carbon diamond or diamond like carbon powder grains surrounded by the sidewalls of the hole.

Abstract translation: 场效应电子源包括在覆盖形成在绝缘基板上的阴极电极的绝缘层上形成的栅电极。 在栅电极绝缘层结构中设置孔，孔延伸到形成在绝缘基板上的阴极电极。 电子发射微胶片形成在衬底上的阴极电极的暴露部分上方的孔内。 这些微盖板每个包括由孔的侧壁包围的至少一个碳金刚石或金刚石像碳粉颗粒的大孔。

公开(公告)号：US5825122A

公开(公告)日：1998-10-20

申请号：US619704

申请日：1996-03-26

Applicant: Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

Inventor： Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

Abstract translation: PCT No.PCT / RU95 / 00154 Sec。 371日期1997年3月26日 102（e）1997年3月26日PCT PCT 1995年7月18日PCT公布。 公开号WO96 / 03762 日期1996年2月8日A矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作与放射器串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的高度（h）与直径（D）的比值不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

公开(公告)号：US5811916A

公开(公告)日：1998-09-22

申请号：US752235

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

公开(公告)号：US5801477A

公开(公告)日：1998-09-01

申请号：US383410

申请日：1995-01-31

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L.ltoreq.(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”，其中L i =（s + r）/ 2。

公开(公告)号：US5757114A

公开(公告)日：1998-05-26

申请号：US740457

申请日：1996-10-29

Applicant: James E. Jaskie

Inventor： James E. Jaskie

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.

公开(公告)号：US5747918A

公开(公告)日：1998-05-05

申请号：US567867

申请日：1995-12-06

Applicant: Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

Inventor： Chang-Beom Eom ,  Sungho Jin ,  Gregory Peter Kochanski ,  Mark Thomas McCormack ,  Yiu-Huen Wong

IPC: H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.

Abstract translation: 公开了一种用于场发射显示装置的新型和有利的阴极结构。 给定像素包括在支撑体上的多个间隔开的发射体。 给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。 作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。 这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。 我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层 身体。 还公开了制备根据本发明的阴极的方法。

公开(公告)号：US5723954A

公开(公告)日：1998-03-03

申请号：US422094

申请日：1995-04-14

Applicant: Stephen E. Sampayan

Inventor： Stephen E. Sampayan

IPC: H01J1/312 ,  H01J11/04

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J2201/30457 ,  H01J2201/306

Abstract: A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Abstract translation: 混合发射器利用由快速去除的铁电材料产生的电场。 将平面薄膜金刚石发射体的发射特性与铁电体组合减轻了与两种类型的发射体相关的当前技术问题，并且提供了出现微波发电所需类型的稳健，极长寿命，高电流密度的阴极，加速器技术 并显示应用程序。 这种新的混合发射器容易制造，并且不易受到与微结构场发射极技术相关的相同故障的影响。 独立地确定局部电极几何形状和电场，以实现最佳的运输和亮度保持。 由于在铁电体上产生大量的表面电荷，所发射的电子具有显着的能量，因此消除了在发射平板显示器中对专用荧光体的要求。

公开(公告)号：US5709577A

公开(公告)日：1998-01-20

申请号：US361616

申请日：1994-12-22

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC: H01J31/12 ,  H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J29/04 ,  H01J1/30

CPC classification number: H01J23/06 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

Abstract: Applicants have discovered methods for making electron emitters using commercially available diamond particles treated to enhance their capability for electron emission under extremely low electric fields. Specifically, applicants have discovered that electron emitters comprising ultra-fine (5-10,000 nm) diamond particles heat-treated by a hydrogen plasma, can produce electron emission current density of at least 0.1 mA/mm.sup.2 at extremely low electric fields of 0.5-1.5 V/.mu.m. These field values are about an order of magnitude lower than exhibited by the best defective CVD diamond and almost two orders of magnitude lower than p-type semiconducting diamond. Emitters are preferably fabricated by suspending the ultra-fine diamond particles, preferably in the nanometer size range, in an aqueous solution, applying the suspension as a coating onto a conducting substrate such as n-type Si or metal, and then subjecting the coated substrate to a plasma of hydrogen, preferably at temperatures above 300.degree. C. for a period of 30 minutes or longer. The resulting emitters show excellent emission properties such as extremely low turn-on voltage, good uniformity and high current densities. It is further found that the emission characteristics remain the same even after the plasma treated diamond surface is exposed to air for several months.

Abstract translation: 申请人已经发现使用经过处理以提高其在极低电场下电子发射能力的市售金刚石颗粒来制造电子发射体的方法。 具体地，申请人已经发现，包含由氢等离子体热处理的超细（5-10,000nm）金刚石颗粒的电子发射体可在0.5-1.5的极低电场下产生至少0.1mA / mm 2的电子发射电流密度 V /亩。 这些场值比由最好的有缺陷的CVD金刚石显示的低一个数量级，比p型半导体金刚石低两个数量级。 优选地，通过将​​优选在纳米尺寸范围的超细金刚石颗粒悬浮在水溶液中，将悬浮液作为涂层施涂到诸如n型Si或金属的导电基材上，然后对涂覆的基材 至氢的等离子体，优选在高于300℃的温度下持续30分钟或更长时间。 所得到的发射体显示出优异的发射特性，例如极低的导通电压，良好的均匀性和高的电流密度。 进一步发现即使在等离子体处理的金刚石表面暴露于空气几个月之后，发射特性也保持不变。