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公开(公告)号：US5747918A
公开(公告)日：1998-05-05
申请号：US567867
申请日：1995-12-06
CPC分类号： H01J1/3042 , H01J2201/30403 , H01J2201/30457
摘要： A novel and advantageous cathode structure for a field emission display apparatus is disclosed. A given pixel comprises a multiplicity of spaced apart emitter bodies on a support. A given emitter body comprises diamond and/or rare earth boride, and has a relatively sharp geometrical feature that facilitates electron emission from the emitter body. By way of example, the emitter body comprises diamond bodies grown on a support, or it comprises a pre-existing diamond particle that was placed on the support. Such emitter bodies generally can be provided easily and at low cost, and typically have naturally occurring sharp geometrical features such as points and edges. We have also discovered that appropriately grown rare earth boride films of thickness 30 nm or less may substantially improve electron emission from emitter bodies, and some preferred embodiments of the invention comprise a cathode structure that comprises a thin layer of, e.g., LaB.sub.6 on the emitter bodies. Methods of making cathodes according to the invention are also disclosed.
摘要翻译： 公开了一种用于场发射显示装置的新型和有利的阴极结构。 给定像素包括在支撑体上的多个间隔开的发射体。 给定的发射体包括金刚石和/或稀土硼化物，并且具有促进发射体的电子发射的相对尖锐的几何特征。 作为示例，发射器体包括在支撑体上生长的金刚石体，或者包括放置在支撑体上的预先存在的金刚石颗粒。 这样的发射体通常可以容易且低成本地提供，并且通常具有天然存在的尖锐几何特征，例如点和边缘。 我们还发现，适当生长的厚度为30nm或更小的稀土硼化物膜可以显着改善发射体的电子发射，并且本发明的一些优选实施例包括阴极结构，其包括例如发射极上的LaB6的薄层 身体。 还公开了制备根据本发明的阴极的方法。
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2.发明授权Method of manufacturing and mounting electronic devices to limit the effects of parasitics 有权制造和安装电子设备以限制寄生效应的方法公开(公告)号：US06675450B1
公开(公告)日：2004-01-13
申请号：US09698175
申请日：2000-10-30
IPC分类号： H04R1700
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitanaces and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
摘要翻译： 一种制造和安装电子设备以消除寄生效应对设备性能的方法。 在一个方面，在制造期间，器件的衬底表面涂覆有薄的耐蚀刻膜，其用作屏障以允许去除膜下方的衬底材料，产生悬挂结构，剩余的电路层在其上休息。 或者，该装置由与装置成一体的膜制成，并且用作支撑膜。 为了将器件安装在载体或封装上，在器件的导体的端部附近施加焊料凸块，然后将管芯固定到载体或封装上，并将其定位成使得从导体延伸的引线与接合条配合 在载体或包装上。 焊料凸块然后被回流或熔化，以在器件的引线和载体的相应接合条之间建立电连接。 所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响，安装的器件被进一步配置以便调出在制造之后仍然存在的任何残留寄生效应。
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公开(公告)号：US06285324B1
公开(公告)日：2001-09-04
申请号：US09396948
申请日：1999-09-15
IPC分类号： H01Q302
CPC分类号： H01Q9/0421 , H01Q1/243 , H01Q9/0407
摘要： An antenna package for use in a wireless communications device. The package includes a metallic leadframe section having a plurality of leads and a paddle shaped as a planar antenna, and dielectric material encapsulating the paddle and portions of the leads.
摘要翻译： 一种用于无线通信设备的天线包。 该封装包括具有多个引线的金属引线框架部分和形成为平面天线的叶片，以及封装所述桨叶和所述引线的部分的电介质材料。
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公开(公告)号：US5563979A
公开(公告)日：1996-10-08
申请号：US522012
申请日：1995-08-31
IPC分类号： G02B6/12 , G02B6/136 , G02F1/35 , G02F1/39 , H01S3/06 , H01S3/063 , H01S3/10 , H01S3/16 , G02B6/16 , H01S3/07
CPC分类号： G02B6/136 , H01S3/063 , G02B2006/12169 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an absolute erbium concentration of at least about 0.5.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 5 milliseconds. The active core does not contain significant amounts of alkali metals or alkaline earth metals but does contain at least two modifier metals. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.
摘要翻译： 有源光学器件包括设置在基板的基本平坦的主表面上的玻璃波导结构。 该结构包括二氧化硅基铒掺杂活性核。 活性核心的绝对铒浓度至少约为0.5×1020原子/立方厘米，铒激发光照射的寿命至少约为5毫秒。 活性核不含有显着量的碱金属或碱土金属，但含有至少两种改性金属。 还公开了一种用于形成有源光学器件的方法，包括通过溅射沉积铒掺杂的有源核的步骤。
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公开(公告)号：US5526371A
公开(公告)日：1996-06-11
申请号：US372261
申请日：1995-01-13
申请人： Joseph Shmulovich , Yiu-Huen Wong
发明人： Joseph Shmulovich , Yiu-Huen Wong
CPC分类号： H01S3/063 , H01S3/094 , H01S3/1608 , H01S3/2383
摘要： Plural planar optical devices are simultaneously pumped by a single pumping source. Various arrangements for accomplishing such pumping are disclosed. By utilizing these arrangements, the topology and routing of integrated arrays including optical devices are simplified.
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公开(公告)号：US5439782A
公开(公告)日：1995-08-08
申请号：US165203
申请日：1993-12-13
申请人： William H. Haemmerle , William M. MacDonald , Casimir R. Nijander , Joseph Shmulovich , Wesley P. Townsend , Yiu-Huen Wong
发明人： William H. Haemmerle , William M. MacDonald , Casimir R. Nijander , Joseph Shmulovich , Wesley P. Townsend , Yiu-Huen Wong
CPC分类号： G02B6/1228 , G02B6/1221 , G02B6/305
摘要： Tapered optical waveguides (33') can be easily made by using photolithographic masking and etching to define on a substrate (21) a first polymer structure (22) having a substantially uniform thickness and a tapered width. The first polymer structure is heated sufficiently to form a meniscus along its entire length. The fluidity causes the material to redistribute itself such that, rather than being of uniform thickness, it has a thickness that varies with its width; consequently, the thickness as well as the width of the first polymer structure becomes tapered. The first polymer is cooled and hardened to form a second polymer structure (22') that has a tapered width and a tapered thickness as is desirable for a tapered optical waveguide. The second polymer structure itself can be used as a tapered optical waveguide, or it can be used to control the reactive ion etching of the underlying substrate. In the latter case, the configuration of the tapered second polymer structure is replicated in a glass substrate, for example, which then may be used as a glass tapered optical waveguide (33').
摘要翻译： 锥形光波导（33'）可以通过使用光刻掩模和蚀刻来在衬底（21）上限定具有基本上均匀的厚度和锥形宽度的第一聚合物结构（22）来容易地制成。 第一聚合物结构被充分加热以在整个长度上形成弯液面。 流动性导致材料重新分布自身，使得不是具有均匀的厚度，而是具有随其宽度而变化的厚度; 因此，第一聚合物结构的厚度以及宽度变得逐渐变细。 将第一聚合物冷却并硬化以形成第二聚合物结构（22'），其具有如锥形光波导所需的锥形宽度和锥形厚度。 第二聚合物结构本身可以用作锥形光波导，或者可以用于控制底层基板的反应离子蚀刻。 在后一种情况下，锥形第二聚合物结构的构造被复制在例如可用作玻璃锥形光波导（33'）的玻璃基板中。
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公开(公告)号：US5119460A
公开(公告)日：1992-06-02
申请号：US691262
申请日：1991-04-25
申请人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
发明人： Allan J. Bruce , Joseph Shmulovich , Amy Wong , Yiu-Huen Wong
CPC分类号： H01S3/063 , H01S3/1608
摘要： An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an erbium-to-silicon atomic ratio of at least about 0.01, an absolute erbium concentration of at least about 1.4.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 7 milliseconds. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.
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8.发明申请INCREMENTAL TUNING PROCESS FOR ELECTRICAL RESONATORS BASED ON MECHANICAL MOTION 有权基于机械运动的电动共振器增益调谐过程公开(公告)号：US20080028584A1
公开(公告)日：2008-02-07
申请号：US11869997
申请日：2007-10-10
申请人： Bradley Barber , Yiu-Huen Wong
发明人： Bradley Barber , Yiu-Huen Wong
IPC分类号： H04R17/10
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译： 本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。 使用交替选择性蚀刻来从顶部电极去除不同的调节层。 其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。 同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的 谐振器的谐振频率。
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9.发明授权Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom 有权用于确定和/或改善薄膜谐振器装置中的高功率可靠性的方法和装置，以及由此产生的薄膜谐振器装置公开(公告)号：US06674291B1
公开(公告)日：2004-01-06
申请号：US09669681
申请日：2000-09-26
IPC分类号： G01R2702
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.
摘要翻译： 已经显示电迁移的影响导致仅在几个小时内对诸如薄膜谐振器（TFR）器件的电子器件的金属电极的损坏，用于在这些器件的工作范围内的测试输入功率。 已经确定这种故障对输入功率的频率敏感。 本发明提供一种用于确定电子设备中的高功率可靠性的方法和装置，以便能够准确地确定电子设备的故障时间，并因此能够预测寿命。 作为用于测试设备的方法的一部分，该确定与施加到电子设备的输入功率的频率无关。 基于上述结果，已经开发了一种TFR器件，其包括保护或电迁移减少层，例如钛沉积在器件的电极上。 具有改进的电极结构的TFR器件可以在更高的功率水平下工作，并且具有比目前可用的更长的工作寿命。
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公开(公告)号：US06349454B1
公开(公告)日：2002-02-26
申请号：US09363527
申请日：1999-07-29
IPC分类号： H01L4100
CPC分类号： H03H9/174 , H03H3/02 , H03H2003/023 , Y10T29/42
摘要： A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
摘要翻译： 制造薄膜谐振器（TFR），其具有在生长表面上外延生长的改进的压电膜，导致具有较少晶界的压电膜。 外延生长是指具有晶体取向取自或模拟单晶衬底或生长表面的晶体取向的压电薄膜。 例如，通过在单晶硅衬底上外延生长作为生长表面的压电膜，产生几乎没有或没有晶界的改进的压电膜。 还提供了制造在基板上生长压电膜的TFR的方法。 随后，去除衬底的一部分，并且电极沉积在压电膜的任一侧上。
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