公开(公告)号：US10483102B2

公开(公告)日：2019-11-19

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  C23C16/04 ,  C23C16/02

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US10480074B2

公开(公告)日：2019-11-19

申请号：US15822551

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Jianhua Zhou ,  Juan Carlos Rocha-Alvarez ,  Yihong Chen ,  Abhijit Basu Mallick ,  Oscar Lopez ,  Ningli Liu

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

公开(公告)号：US20190228982A1

公开(公告)日：2019-07-25

申请号：US16246711

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Abhijit Basu Mallick ,  Shishi Jiang ,  Yong Wu ,  Kurtis Leschkies ,  Srinivas Gandikota

IPC: H01L21/3105 ,  C23C16/56 ,  H01L21/02

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.

公开(公告)号：US20190189506A1

公开(公告)日：2019-06-20

申请号：US16224337

申请日：2018-12-18

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/324 ,  H01L21/3105

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

公开(公告)号：US20190157134A1

公开(公告)日：2019-05-23

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/02123 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/76837 ,  H01L23/3178 ,  H01L29/0649

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US10280507B2

公开(公告)日：2019-05-07

申请号：US15978930

申请日：2018-05-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Darshan Thakare ,  Abhijit Basu Mallick ,  Pramit Manna ,  Robert Jan Visser ,  Prerna Sonthalia Goradia ,  Nilesh Chimanrao Bagul

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/34 ,  H01L21/02

Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

公开(公告)号：US20190013202A1

公开(公告)日：2019-01-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials,Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  H01L21/3213 ,  C23F1/00

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10176980B2

公开(公告)日：2019-01-08

申请号：US15185282

申请日：2016-06-17

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40

Abstract: Embodiments described herein generally provide a method for filling features formed on a substrate. In one embodiment, a method for selectively forming a silicon oxide layer on a substrate is provided. The method includes selectively depositing a silicon oxide layer within a patterned feature formed on a surface of a substrate, wherein the patterned feature comprises one or more sidewalls and a deposition surface at a bottom of the patterned feature, the one or more sidewalls comprise a silicon oxide, a silicon nitride, or a combination thereof, the deposition surface essentially consists of silicon, and the selectively deposited silicon oxide layer is formed on the deposition surface by flowing tetraethyl orthosilicate (TEOS) and ozone over the patterned feature.

公开(公告)号：US20180294166A1

公开(公告)日：2018-10-11

申请号：US15946107

申请日：2018-04-05

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Shishi Jiang

IPC: H01L21/3105 ,  H01L21/02

Abstract: Methods for seam-less gapfill comprising forming a flowable film by PECVD, annealing the flowable film with a reactive anneal to form an annealed film and curing the flowable film or annealed film to solidify the film. The flowable film can be formed using a higher order silane and plasma. The reactive anneal may use a silane or higher order silane. A UV cure, or other cure, can be used to solidify the flowable film or the annealed film.

公开(公告)号：US10083834B2

公开(公告)日：2018-09-25

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.