公开(公告)号：US20140199851A1

公开(公告)日：2014-07-17

申请号：US14153246

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31111 ,  H01L21/32105

Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.

Abstract translation: 描述了图案化氮化硅介电膜的方法。 例如，各向同性蚀刻电介质膜的方法包括用氧基等离子体工艺部分地修饰氮化硅层的暴露区域，以提供氮化硅层的改性部分和未改性部分。 该方法还涉及通过第二等离子体处理来去除对未改性部分氮化硅层的改性部分的选择性。

公开(公告)号：US12288672B2

公开(公告)日：2025-04-29

申请号：US17079783

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Chentsau Chris Ying ,  Ellie Y. Yieh ,  Erica Chen ,  Nithin Thomas Alex

IPC: H01J37/32 ,  C23C16/513 ,  H01L21/02

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：US12198951B2

公开(公告)日：2025-01-14

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Adib Khan ,  Venkata Ravishankar Kasibhotla ,  Sultan Malik ,  Sean S. Kang ,  Keith Tatseun Wong

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/687 ,  H01L21/768

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US11881411B2

公开(公告)日：2024-01-23

申请号：US17307737

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Mei-Yee Shek ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/383 ,  C23C14/58 ,  C23C14/48 ,  H01L21/44

CPC classification number: H01L21/383 ,  C23C14/48 ,  C23C14/5806 ,  H01L21/44

Abstract: The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.

公开(公告)号：US11621226B2

公开(公告)日：2023-04-04

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26 ,  H10B69/00 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US11542597B2

公开(公告)日：2023-01-03

申请号：US16902665

申请日：2020-06-16

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US11446740B2

公开(公告)日：2022-09-20

申请号：US15941812

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher A. Rowland ,  Anantha K. Subramani ,  Kasiraman Krishnan ,  Kartik Ramaswamy ,  Thomas B. Brezoczky ,  Swaminathan Srinivasan ,  Jennifer Y. Sun ,  Simon Yavelberg ,  Srinivas D. Nemani ,  Nag B. Patibandla ,  Hou T. Ng

IPC: B22F10/30 ,  B33Y30/00 ,  B33Y10/00 ,  B29C64/153 ,  B22F12/00 ,  B33Y50/02 ,  B23K10/00 ,  B23K10/02 ,  B28B1/00 ,  B22F10/10 ,  B22F12/55 ,  B22F12/63 ,  B22F12/41 ,  B22F3/105 ,  H05B3/00

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

公开(公告)号：US11429026B2

公开(公告)日：2022-08-30

申请号：US16825393

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong Dai ,  Mangesh Ashok Bangar ,  Srinivas D. Nemani ,  Christopher S. Ngai ,  Ellie Y. Yieh

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38 ,  G03F7/30

Abstract: A method for enhancing the depth of focus process window during a lithography process includes applying a photoresist layer comprising a photoacid generator on a material layer disposed on a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and dynamically changing a frequency of the electric field as generated while providing the thermal energy to the photoresist layer.

公开(公告)号：US20220139668A1

公开(公告)日：2022-05-05

申请号：US17572563

申请日：2022-01-10

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US11289331B2

公开(公告)日：2022-03-29

申请号：US16585929

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.