公开(公告)号：US20150162101A1

公开(公告)日：2015-06-11

申请号：US14407318

申请日：2013-10-31

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Ian Shaeffer

IPC: G11C29/44 ,  G06F11/10

CPC classification number: G11C29/4401 ,  G06F11/1016 ,  G06F11/1072 ,  G11C29/808 ,  G11C29/846

Abstract: A memory device (100) includes an extra column (114) of repair memory tiles. These repair memory tiles are accessed at the same time, and in the same manner as the main array of memory tiles. The output of the repair column is substituted for the output of a column of the main array (112). The main array column that is substituted is determined by tags (121) stored externally to the memory device. The external tags are queried with a partial address of the access. If the address of the access corresponds to an address in the external tags, the tag information is supplied to the memory device. The tag information determines which column in the main array is replaced by the output of the repair column. Since each column of the main array supplies one bit during the access, the repair column enables cell-by-cell replacement of main array cells.

Abstract translation: 存储器设备（100）包括修复存储器块的额外列（114）。 这些修复存储器瓦片同时被以与主阵列的存储器瓦片相同的方式被访问。 修复列的输出代替主阵列（112）的列的输出。 取代的主阵列列由存储在外部的存储器件的标签（121）决定。 使用访问的部分地址查询外部标记。 如果访问的地址对应于外部标签中的地址，则将标签信息提供给存储设备。 标签信息确定主阵列中的哪个列由修复列的输出替代。 由于主阵列的每列在访问期间提供一位，所以修复列可以逐个单元替换主阵列单元。

公开(公告)号：US08707009B2

公开(公告)日：2014-04-22

申请号：US13627870

申请日：2012-09-26

Applicant: Rambus Inc.

Inventor： Ian Shaeffer

IPC: G06F13/12 ,  G06F13/38 ,  G06F9/26 ,  G06F9/34

CPC classification number: G11C8/16 ,  G06F12/00 ,  G06F13/4018 ,  G06F13/4243 ,  G11C8/06

Abstract: Described are memory modules that support dynamic point-to-point extensibility using fixed-width memory die. The memory modules include data-width translators that allow the modules to vary the effective width of their external memory interfaces without varying the width of the internal memory interfaces extending between the translators and associated fixed-width dies. The data-width translators use a data-mask signal to selectively prevent memory accesses to subsets of physical addresses. This data masking divides the physical address locations into two or more temporal subsets of the physical address locations, effectively increasing the number of uniquely addressable locations in a given module. Reading temporal addresses in write order can introduce undesirable read latency. Some embodiments reorder read data to reduce this latency.

Abstract translation: 描述的是使用固定宽度内存模块支持动态点对点可扩展性的内存模块。 存储器模块包括数据宽度转换器，其允许模块改变其外部存储器接口的有效宽度，而不改变在转换器和相关联的固定宽度管芯之间延伸的内部存储器接口的宽度。 数据宽度转换器使用数据掩码信号来选择性地阻止对物理地址子集的存储器访问。 该数据屏蔽将物理地址位置划分为物理地址位置的两个或更多个时间子集，从而有效地增加给定模块中唯一可寻址位置的数量。 以写入顺序读取时间地址可能会引入不期望的读取延迟。 一些实施例重新排序读取数据以减少该等待时间。

公开(公告)号：US20140006691A1

公开(公告)日：2014-01-02

申请号：US13917396

申请日：2013-06-13

Applicant: Rambus Inc.

Inventor： Brent Haukness ,  Ian Shaeffer

IPC: G06F12/02

CPC classification number: G11C16/32 ,  G06F12/0246 ,  G06F2212/7201 ,  G11C16/04 ,  G11C16/107 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50012 ,  G11C2029/4402

Abstract: This disclosure provides a method of accurately determining expected transaction times associated with flash memory subdivisions, such as devices, blocks or pages. By performing a test transaction to program each bit of each such unit, the maximum expected programming time of each unit may be determined in advance and used for scheduling purposes. For example, in a straightforward implementation, a relatively accurate, empirically measured time limit may be identified and used to efficiently manage and schedule flash memory transactions without awaiting ultimate resolution of attempts to write to a non-responsive page. This disclosure also provides other uses of empirically-measured maximum flash memory transaction times, including via multiple memory modes and prioritized memory; for example, if a high performance mode is desired, low variation in flash memory transaction times may be tolerated, and units not satisfying these principles may be marked relatively quickly.

Abstract translation: 本公开提供了一种准确地确定与诸如设备，块或页面之类的闪速存储器细分有关的预期交易时间的方法。 通过执行测试事务来对每个这样的单元的每个位进行编程，可以预先确定每个单元的最大预期编程时间并用于调度目的。 例如，在简单的实现中，可以识别相对精确的经验测量的时间限制并用于有效地管理和调度闪速存储器事务，而不等待最终解决写入非响应页面的尝试。 本公开还提供经验测量的最大闪存交易时间的其他用途，包括经由多个存储器模式和优先存储器; 例如，如果需要高性能模式，则可以容忍闪速存储器交易时间的低变化，并且可以相对快速地标记不满足这些原理的单元。

公开(公告)号：US12298920B2

公开(公告)日：2025-05-13

申请号：US18590200

申请日：2024-02-28

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Frederick A. Ware

IPC: G06F12/14 ,  G06F3/06 ,  G06F12/02 ,  G06F13/16

Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

公开(公告)号：US12136452B2

公开(公告)日：2024-11-05

申请号：US18209976

申请日：2023-06-14

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G06F12/00 ,  G06F1/08 ,  G06F3/06 ,  G06F5/06 ,  G06F12/06 ,  G06F13/16 ,  G11C7/10 ,  G11C11/4076 ,  G11C11/409 ,  G11C29/02 ,  G11C11/4096

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

公开(公告)号：US20240020258A1

公开(公告)日：2024-01-18

申请号：US18355660

申请日：2023-07-20

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F13/16 ,  G06F12/00 ,  G06F13/00

CPC classification number: G06F13/4022 ,  G06F13/1673 ,  G06F12/00 ,  G06F13/00 ,  G06F13/1694

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

公开(公告)号：US20230326513A1

公开(公告)日：2023-10-12

申请号：US18103386

申请日：2023-01-30

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lei Luo ,  Liji Gopalakrishnan

IPC: G11C11/4076 ,  G11C11/4096 ,  G11C7/10 ,  G11C7/20 ,  G11C7/22 ,  G11C11/4072 ,  G11C11/4074 ,  G06F1/3237 ,  G06F1/04 ,  G06F1/3234 ,  G06F1/08 ,  G11C11/408

CPC classification number: G11C11/4076 ,  G11C11/4096 ,  G11C7/1072 ,  G11C7/20 ,  G11C7/22 ,  G11C11/4072 ,  Y02D30/50 ,  G06F1/3237 ,  G06F1/04 ,  G06F1/3234 ,  G06F1/08 ,  G11C11/4087 ,  Y02D10/00 ,  G11C11/4074

Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

公开(公告)号：US11782863B2

公开(公告)日：2023-10-10

申请号：US17826056

申请日：2022-05-26

Applicant: Rambus Inc.

Inventor： Liji Gopalakrishnan ,  Ian Shaeffer ,  Yi Lu

IPC: G06F13/40 ,  G11C7/10 ,  G11C11/4093 ,  G11C11/4094 ,  G11C5/04 ,  G06F13/16 ,  G11C11/4096

CPC classification number: G06F13/4068 ,  G06F13/1673 ,  G06F13/1678 ,  G11C5/04 ,  G11C7/1012 ,  G11C7/1039 ,  G11C7/1045 ,  G11C7/1075 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/4096 ,  Y02D10/00

Abstract: A memory module includes memory devices and a configurable command buffer that selects between alternative command ports for controlling different groupings of the memory devices. Memory systems with memory modules incorporating such a command buffer and memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths.

公开(公告)号：US11587605B2

公开(公告)日：2023-02-21

申请号：US17341048

申请日：2021-06-07

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lei Luo ,  Liji Gopalakrishnan

IPC: G06F1/04 ,  G06F1/08 ,  G06F1/3234 ,  G06F1/3237 ,  G11C11/4072 ,  G11C11/4074 ,  G11C11/4076 ,  G11C11/408 ,  G11C11/4096 ,  G11C7/10 ,  G11C7/20 ,  G11C7/22

Abstract: An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

公开(公告)号：US20220398206A1

公开(公告)日：2022-12-15

申请号：US17809688

申请日：2022-06-29

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F13/16 ,  G06F12/00 ,  G06F13/00

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.