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    SEMICONDUCTOR DEVICE
    161.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150200000A1

    公开(公告)日：2015-07-16

    申请号：US14670525

    申请日：2015-03-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Jun KOYAMA

    IPC: G11C5/14

    CPC classification number: G11C5/14 ,  G06F1/206 ,  G06F1/3203 ,  G11C5/148 ,  G11C7/00 ,  H01L27/1203 ,  H01L29/786

    Abstract: To provide a semiconductor device including a plurality of circuit blocks each of which is capable of performing power gating by setting off periods appropriate to temperatures of the respective circuit blocks. Specifically, the semiconductor device includes an arithmetic circuit, a memory circuit configured to hold data obtained by the arithmetic circuit, a power supply control switch configured to control supply of the power supply voltage to the arithmetic circuit, a temperature detection circuit configured to detect the temperature of the memory circuit and to estimate overhead from the temperature, and a controller configured to set a period during which supply of the power supply voltage is stopped in the case where a power consumption of the arithmetic circuit during the period is larger than the overhead period and to control the power supply control switch.

    Abstract translation: 提供一种包括多个电路块的半导体器件，每个电路块能够通过适当地适应各个电路块的温度的周期来执行电源门控。 具体地说，半导体装置具有运算电路，保存由运算电路得到的数据的存储电路，配置为控制向运算电路供给电源电压的电源控制开关，温度检测电路， 存储电路的温度和从温度估计开销;以及控制器，被配置为设置在该期间内的运算电路的功耗大于开销的情况下停止供电电压的期间 周期并控制电源控制开关。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR
    163.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR 有权
    半导体器件及其制造方法

    公开(公告)号：US20150177545A1

    公开(公告)日：2015-06-25

    申请号：US14640045

    申请日：2015-03-06

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

    CPC classification number: H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

    Abstract: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

    Abstract translation: 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

    SEMICONDUCTOR MEMORY DEVICE
    164.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号：US20150129872A1

    公开(公告)日：2015-05-14

    申请号：US14557506

    申请日：2014-12-02

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

    IPC: H01L27/108 ,  H01L29/24

    CPC classification number: H01L27/108 ,  H01L27/10844 ,  H01L27/10852 ,  H01L27/10858 ,  H01L27/10873 ,  H01L29/24

    Abstract: A semiconductor memory device which includes a memory cell including two or more sub memory cells is provided. The sub memory cells each including a word line, a bit line, a first capacitor, a second capacitor, and a transistor. In the semiconductor device, the sub memory cells are stacked in the memory cell; a first gate and a second gate are formed with a semiconductor film provided therebetween in the transistor; the first gate and the second gate are connected to the word line; one of a source and a drain of the transistor is connected to the bit line; the other of the source and the drain of the transistor is connected to the first capacitor and the second capacitor; and the first gate and the second gate of the transistor in each sub memory cell overlap with each other and are connected to each other.

    Abstract translation: 提供一种半导体存储器件，其包括具有两个以上子存储单元的存储单元。 每个子存储单元包括字线，位线，第一电容器，第二电容器和晶体管。 在半导体器件中，子存储单元堆叠在存储单元中; 第一栅极和第二栅极形成有在晶体管内设置的半导体膜; 第一栅极和第二栅极连接到字线; 晶体管的源极和漏极之一连接到位线; 晶体管的源极和漏极中的另一个连接到第一电容器和第二电容器; 并且每个子存储器单元中的晶体管的第一栅极和第二栅极彼此重叠并且彼此连接。

    SEMICONDUCTOR DEVICE
    165.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150048366A1

    公开(公告)日：2015-02-19

    申请号：US14500385

    申请日：2014-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

    IPC: H01L27/146 ,  H01L27/12

    CPC classification number: H01L27/1225 ,  H01L27/102 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/78693 ,  H01L31/095 ,  H04N5/37457

    Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

    Abstract translation: 提供了一种长时间保持电位且包括具有稳定电特性的薄膜晶体管的固态图像传感器。 当包括氧化物半导体层的薄膜晶体管的截止电流设定为1×10-13A或更低，并且薄膜晶体管用作固态图像传感器的复位晶体管和传输晶体管时， 信号电荷存储部分的电位保持恒定，从而可以提高动态范围。 当将可用于互补金属氧化物半导体的硅半导体用于外围电路时，可以制造具有低功耗的高速半导体器件。

    SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING SENSOR CIRCUIT
    167.
    发明申请
    SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING SENSOR CIRCUIT 有权
    传感器电路和包括传感器电路的半导体器件

    公开(公告)号：US20140246667A1

    公开(公告)日：2014-09-04

    申请号：US14190126

    申请日：2014-02-26

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Jun KOYAMA ,  Tomokazu Yokoi ,  Tsutomu Murakawa

    IPC: H01L31/0296

    CPC classification number: H01L31/0296 ,  G01J1/0219 ,  G01J1/429 ,  G01J1/44 ,  G01J2001/4473

    Abstract: A sensor circuit includes a transistor comprising an oxide semiconductor; a first circuit which supplies one of a first potential and a second potential; a first switch; a second switch; and a second circuit to which a current flowing between a source and a drain of the transistor is applied via the second switch when the first potential is applied to a gate of the transistor. The first potential is lower than a potential of the source or a potential of the drain of the transistor, and the second potential is higher than the potential of the source or the potential of the drain of the transistor. The first switch electrically connects the source and the drain of the transistor when the second potential is applied to the gate of the transistor, and electrically isolates them when the first potential is applied to the gate of the transistor.

    Abstract translation: 传感器电路包括：包括氧化物半导体的晶体管; 提供第一电位和第二电位之一的第一电路; 第一个开关 第二个开关 以及第二电路，当第一电位施加到晶体管的栅极时，经由第二开关施加在晶体管的源极和漏极之间流动的电流的第二电路。 第一电位低于晶体管源极电位或漏极电位，第二电位高于晶体管的源极电位或漏极电位。 当第二电位施加到晶体管的栅极时，第一开关将晶体管的源极和漏极电连接，并且当第一电位被施加到晶体管的栅极时将其电隔离。

    DISPLAY DEVICE AND ELECTRONIC DEVICE
    169.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
    显示设备和电子设备

    公开(公告)号：US20140145182A1

    公开(公告)日：2014-05-29

    申请号：US14089133

    申请日：2013-11-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hiroyuki MIYAKE ,  Jun KOYAMA

    IPC: H01L27/12

    CPC classification number: H01L27/1244 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3276 ,  H01L2227/323

    Abstract: To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes.

    Abstract translation: 提供一种新颖的显示设备。 显示装置包括像素部分，设置在像素部分外部的驱动器电路部分，以及电连接到像素部分和驱动器电路部分中的一个或两个并且包括一对电极的保护电路。 像素部分包括以矩阵布置的像素电极和电连接到像素电极的晶体管。 该晶体管包括含有氮和硅的第一绝缘层和含有氧，氮和硅的第二绝缘层。 保护电路包括一对电极之间的第一绝缘层。

    DISPLAY DEVICE
    170.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20140145181A1

    公开(公告)日：2014-05-29

    申请号：US14079986

    申请日：2013-11-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hiroyuki MIYAKE ,  Jun KOYAMA

    IPC: H01L27/02 ,  H02H9/04

    CPC classification number: H02H9/045 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L2227/323 ,  H02H9/044

    Abstract: To provide a novel display device with improved reliability. The display device includes an insulating layer between a first wiring and a second wiring. The insulating layer includes a first insulating layer and a second insulating layer overlapping with the first insulating layer and a region where a part of the second insulating layer is removed, and the region serves as a protection circuit. In addition, the first insulating layer and the second insulating layer are included in a region where the insulating layer overlaps with a semiconductor layer of a transistor, and a region where the first insulating layer and the second insulating layer are removed is included in a region where the first wiring and the second wiring are directly connected to each other.

    Abstract translation: 提供可靠性提高的新型显示装置。 显示装置包括在第一布线和第二布线之间的绝缘层。 绝缘层包括与第一绝缘层重叠的第一绝缘层和第二绝缘层以及去除第二绝缘层的一部分的区域，并且该区域用作保护电路。 此外，第一绝缘层和第二绝缘层包括在绝缘层与晶体管的半导体层重叠的区域中，并且除去第一绝缘层和第二绝缘层的区域包括在区域 其中第一布线和第二布线彼此直接连接。

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