公开(公告)号：US09536747B2

公开(公告)日：2017-01-03

申请号：US14464158

申请日：2014-08-20

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Arnaud Yvon

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/322 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/0661 ,  H01L21/02002 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30621 ,  H01L21/30625 ,  H01L21/3228 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66212 ,  H01L29/872

Abstract: A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.

Abstract translation: 一种用于处理第一导电类型的掺杂氮化镓衬底的方法，其具有出现在其表面的至少一个侧面上的位错。 该方法可以包括：a）在每个错位出现的地方形成从所述至少一个表面延伸到所述基底中的凹部; 以及b）用所述第二导电类型的掺杂氮化镓填充所述凹部。

公开(公告)号：US20160372938A1

公开(公告)日：2016-12-22

申请号：US15251899

申请日：2016-08-30

Applicant: STMicroelectronics (Tours) SAS

Inventor： Emilien Bouyssou ,  Igor Bimbaud

IPC: H02J7/00 ,  H01M10/44 ,  H01M16/00 ,  H01M10/42 ,  H01M10/04 ,  H01M10/0525 ,  H01M10/0562 ,  H02J7/34 ,  H01M10/48

CPC classification number: H02J7/007 ,  H01M6/40 ,  H01M6/5077 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/4242 ,  H01M10/44 ,  H01M10/443 ,  H01M10/486 ,  H01M16/00 ,  H02J7/0075 ,  H02J7/34 ,  Y02E60/122

Abstract: A method for managing the lifetime of a battery is disclosed herein. An ambient temperature is measured near a battery. The ambient temperature rises above a first threshold and, in response to detecting that the ambient temperature has risen above the first threshold, the battery is discharged. A battery system and a device operable with a battery are also disclosed.

Abstract translation: 本文公开了一种用于管理电池寿命的方法。 在电池附近测量环境温度。 环境温度升高到高于第一阈值，并且响应于检测到环境温度升高到高于第一阈值，电池被放电。 还公开了电池系统和可与电池一起操作的装置。

公开(公告)号：US20160301326A1

公开(公告)日：2016-10-13

申请号：US14956482

申请日：2015-12-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier ,  Muriel Nina ,  Romain Pichon

IPC: H02M7/162

CPC classification number: H02M7/162 ,  H02M1/081 ,  H02M7/062 ,  H02M7/125 ,  H02M7/1623

Abstract: An AC/DC converter includes: a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for supplying a DC voltage. A rectifying bridge includes input terminals respectively coupled to the first terminal and the second terminal, and output terminals respectively coupled to the third terminal and fourth terminal. A first branch of the rectifying bridge includes, connected between the output terminals, two series-connected thyristors with a junction point of the two thyristors being connected to a first one of the input terminals. A second branch of the rectifying bridge is formed by series connected diodes. A control circuit is configured to generate control signals for application to the control gates of the thyristors.

Abstract translation: AC / DC转换器包括：用于接收AC电压的第一端子和第二端子，以及用于提供DC电压的第三端子和第四端子。 整流桥包括分别耦合到第一端子和第二端子的输入端子以及分别耦合到第三端子和第四端子的输出端子。 整流桥的第一分支包括连接在输出端子之间的两个串联连接的晶闸管，两个晶闸管的一个接点连接到第一个输入端。 整流桥的第二分支由串联连接的二极管形成。 控制电路被配置为产生用于施加到晶闸管的控制栅极的控制信号。

公开(公告)号：US20160276826A1

公开(公告)日：2016-09-22

申请号：US14925001

申请日：2015-10-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Jérôme HEURTIER ,  Guillaume BOUGRINE ,  Mathieu ROUVIERE

IPC: H02H9/04

CPC classification number: H02H9/04 ,  H02H9/041 ,  H02H9/042 ,  H02H9/043

Abstract: A device may be for protection against overvoltages in a power supply line. The device may include a breakover diode, an avalanche diode coupled in series with the breakover diode, and a switch coupled in parallel with the breakover diode and the avalanche diode. The device may also include a circuit coupled across the avalanche diode and configured to control the switch.

Abstract translation: 设备可以用于防止电源线中的过电压。 该装置可以包括分解二极管，与断流二极管串联耦合的雪崩二极管，以及与断流二极管和雪崩二极管并联耦合的开关。 该装置还可以包括耦合在雪崩二极管两端并被配置为控制开关的电路。

公开(公告)号：US09437722B2

公开(公告)日：2016-09-06

申请号：US14510663

申请日：2014-10-09

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Samuel Menard ,  Gael Gautier

IPC: H01L29/747 ,  H01L29/87 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/66386 ,  H01L21/2885 ,  H01L21/76202 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/32 ,  H01L29/456 ,  H01L29/747 ,  H01L29/87

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

Abstract translation: 垂直功率部件包括在衬底的下表面上具有第二导电类型的阱的第一导电类型的硅衬底。 第一个阱在具有绝缘多孔硅环的部件周边上界定。 多孔硅环的上表面仅与第一导电类型的基板接触。 绝缘多孔硅环穿透衬底直至深度大于孔的厚度。

公开(公告)号：US20160248244A1

公开(公告)日：2016-08-25

申请号：US15143061

申请日：2016-04-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Jérôme Heurtier ,  Guillaume Bougrine ,  Arnaud Florence

IPC: H02H3/20 ,  H02H7/26

CPC classification number: H02H9/043 ,  H02H3/20 ,  H02H7/26 ,  H02H9/04 ,  H02H9/041 ,  H02H9/042

Abstract: An overvoltage protection device capable of protecting a power supply line and including in parallel a break-over diode, a controlled switch, and a circuit for controlling the switch.

Abstract translation: 一种过电压保护装置，其能够保护电源线并且并联包括断路二极管，受控开关和用于控制开关的电路。

公开(公告)号：US20160240864A1

公开(公告)日：2016-08-18

申请号：US15142773

申请日：2016-04-29

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Vincent JARRY

IPC: H01M6/40 ,  H01M10/04 ,  H01M2/30 ,  H01M10/02

CPC classification number: H01M6/40 ,  H01M2/0404 ,  H01M2/0469 ,  H01M2/30 ,  H01M6/00 ,  H01M10/02 ,  H01M10/0436 ,  H01M10/0585 ,  Y10T29/49108 ,  Y10T29/49114 ,  Y10T29/49115

Abstract: A method for forming a microbattery including, on a surface of a first substrate, one active battery element and two contact pads, this method including the steps of: a) forming, on a surface of a second substrate, two contact pads with a spacing compatible with the spacing of the pads of the first substrate; and b) arranging the first substrate on the second substrate so that the surfaces face each other and that the pads of the first substrate at least partially superpose to those of the second substrate, where a portion of the pads of the second substrate is not covered by the first substrate.

公开(公告)号：US20160226370A1

公开(公告)日：2016-08-04

申请号：US14962008

申请日：2015-12-08

Applicant: STMicroelectronics, Inc. ,  STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier ,  Muriel Nina ,  Jurgis Astrauskas

IPC: H02M1/32 ,  H02M7/515

CPC classification number: H02M1/32 ,  H02H1/043 ,  H02H9/001 ,  H02H9/002 ,  H02M1/10 ,  H02M1/36 ,  H02M7/125 ,  H02M7/515 ,  H02M2001/325

Abstract: An AC/DC converter includes a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for delivering a DC voltage. A capacitive circuit is connected between the third and fourth terminals. A rectifying bridge circuit has input terminals respectively coupled to the first and second terminals and has output terminal respectively connected to the third and fourth terminals. An inductive element is coupled in series with a first switch circuit between the first terminal and an input terminal of the rectifying bridge circuit.

Abstract translation: AC / DC转换器包括用于接收AC电压的第一端子和第二端子，以及用于传送DC电压的第三端子和第四端子。 电容电路连接在第三和第四端子之间。 整流桥电路具有分别耦合到第一和第二端子的输入端子，并且具有分别连接到第三和第四端子的输出端子。 电感元件与第一端子和整流桥式电路的输入端之间的第一开关电路串联耦合。

公开(公告)号：US09343557B2

公开(公告)日：2016-05-17

申请号：US13762288

申请日：2013-02-07

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Samuel Menard ,  Gaël Gautier

IPC: H01L29/66 ,  H01L29/74 ,  H01L29/747 ,  H01L29/06

CPC classification number: H01L29/7424 ,  H01L29/0619 ,  H01L29/167 ,  H01L29/66386 ,  H01L29/747

Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Abstract translation: 一种高电压垂直功率元件，包括第一导电类型的硅衬底和从硅衬底的上表面延伸到硅衬底中的第二导电类型的第一半导体层，其中所述元件周边包括：多孔硅 环从上表面延伸到深度比第一层深的硅衬底; 以及从硅表面的下表面延伸到多孔硅环的第二导电类型的掺杂环。

公开(公告)号：US20160118485A1

公开(公告)日：2016-04-28

申请号：US14990194

申请日：2016-01-07

Applicant: STMicroelectronics (Tours) SAS ,  Universite Francois Rabelais

Inventor： Samuel Menard ,  Gael Gautier

IPC: H01L29/747 ,  H01L29/66

CPC classification number: H01L29/66386 ,  H01L21/2885 ,  H01L21/76202 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/32 ,  H01L29/456 ,  H01L29/747 ,  H01L29/87

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.