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    Method for forming suspended microstructures
    171.
    发明申请
    Method for forming suspended microstructures 有权

    公开(公告)号：US20040079277A1

    公开(公告)日：2004-04-29

    申请号：US10278471

    申请日：2002-10-23

    Applicant: Medtronic, Inc.

    Inventor： Michael F. Mattes ,  Ralph B. Danzl

    IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

    CPC classification number: B81C1/00182 ,  B81B2203/0315 ,  B81C2201/0191

    Abstract: A method for forming a suspended microstructure is provided. The method includes providing a monocrystalline target substrate and subjecting the surface of the monocrystalline target substrate to ion implantation to form a microstructure layer at the surface of the monocrystalline target substrate. An epitaxial material layer is formed overlying the microstructure layer. A handle substrate is provided and a patterned interposed material layer is provided between the epitaxial material layer and the handle substrate. The epitaxial material layer, the patterned interposed material layer and the handle substrate are affixed. The method further includes thermally treating the monocrystalline target substrate to effect separation between the microstructure layer and a remainder of the monocrystalline target substrate.

    Method of forming a sensor for detecting motion
    172.
    发明申请
    Method of forming a sensor for detecting motion 审中-公开
    形成检测运动的传感器的方法

    公开(公告)号：US20040065638A1

    公开(公告)日：2004-04-08

    申请号：US10267082

    申请日：2002-10-07

    Inventor： Bishnu Gogoi

    IPC: C23F001/00

    CPC classification number: G01P15/125 ,  B81C1/00142 ,  B81C2201/0191 ,  G01C19/5719 ,  G01P15/0802

    Abstract: A method of forming a sensor for detecting motion is disclosed. The method includes a first step (110) of providing a silicon-on-insulator (SOI) substrate (200) containing a device layer (210), an insulator layer (220), and a handle layer (230). The device layer may be patterned to form a device structure (310). A support substrate (410) is also provided and patterned, and an electrically conductive layer (510) is formed over the support substrate. The SOI substrate and the support substrate are bonded together, and the handle layer and the insulator layer are removed from the SOI substrate, thus releasing the device structure.

    Abstract translation: 公开了形成用于检测运动的传感器的方法。 该方法包括提供包含器件层（210），绝缘体层（220）和手柄层（230）的绝缘体上硅（SOI）衬底（200）的第一步骤（110）。 可以将器件层图案化以形成器件结构（310）。 还提供并图案化支撑衬底（410），并且在支撑衬底上形成导电层（510）。 将SOI衬底和支撑衬底接合在一起，并且从SOI衬底去除手柄层和绝缘体层，从而释放器件结构。

    Controlled cleavage process using pressurized fluid
    174.
    发明授权
    Controlled cleavage process using pressurized fluid 有权

    公开(公告)号：US06582999B2

    公开(公告)日：2003-06-24

    申请号：US09828082

    申请日：2001-04-05

    Applicant: Francois J. Henley ,  Nathan Cheung

    Inventor： Francois J. Henley ,  Nathan Cheung

    IPC: H01L21425

    CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192

    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

    Controlled cleavage process and device for patterned films
    175.
    发明授权
    Controlled cleavage process and device for patterned films 有权
    受控裂解工艺和图案化膜的器件

    公开(公告)号：US06528391B1

    公开(公告)日：2003-03-04

    申请号：US09316493

    申请日：1999-05-21

    Applicant: Francois J. Henley ,  Nathan Cheung

    Inventor： Francois J. Henley ,  Nathan Cheung

    IPC: H01L2130

    CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

    Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

    Microelectromechanical structures defined from silicon on insulator wafers
    178.
    发明授权
    Microelectromechanical structures defined from silicon on insulator wafers 有权
    由绝缘体上硅晶片定义的微机电结构

    公开(公告)号：US06362512B1

    公开(公告)日：2002-03-26

    申请号：US09468423

    申请日：1999-12-21

    Applicant: Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    Inventor： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

    IPC: H01L2982

    CPC classification number: B81B3/0083 ,  B81C2201/0109 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2201/053 ,  G02B6/4214

    Abstract: A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.

    Abstract translation: 器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。 可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。 沉积保护性氧化物层，并集成CMOS电路和传感器。 释放了连接到CMOS电路的传感器的硅微结构。 此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

    Method and device for controlled cleaving process
    179.
    发明申请
    Method and device for controlled cleaving process 有权
    控制裂解过程的方法和装置

    公开(公告)号：US20010026997A1

    公开(公告)日：2001-10-04

    申请号：US09790026

    申请日：2001-02-20

    Inventor： Francois J. Henley ,  Nathan W. Cheung

    IPC: H01L021/30

    CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

    Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

    Precisely defined microelectromechanical structures and associated fabrication methods
    180.
    发明授权
    Precisely defined microelectromechanical structures and associated fabrication methods 失效
    精确定义的微机电结构和相关的制造方法

    公开(公告)号：US06277666B1

    公开(公告)日：2001-08-21

    申请号：US09338962

    申请日：1999-06-24

    Applicant: Kenneth Maxwell Hays ,  Eugene Coleman Whitcomb

    Inventor： Kenneth Maxwell Hays ,  Eugene Coleman Whitcomb

    IPC: H01L2100

    CPC classification number: B81C1/00047 ,  B81C2201/019 ,  B81C2201/0191 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0814

    Abstract: A method is provided for fabricating a MEMS structure from a silicon-on insulator (SOI) wafer that has been bonded to a support substrate, such as a glass substrate, in order to form silicon components that can be both precisely and repeatedly formed. The SOI wafer includes a handle wafer, an insulating layer disposed on the handle wafer and a silicon layer disposed on the insulating layer. At least one trench is etched through the silicon layer by reactive ion etching. By utilizing the reactive ion etching, the trenches can be precisely defined, such as to within a tolerance of 0.1 to 0.2 microns of a predetermined width. After bonding the support substrate to the silicon layer, the handle wafer is removed, such as by reactive ion etching. Thereafter, the insulating layer is selectively removed, again typically by reactive ion etching, to form the resulting MEMS structure that has a very precise and repeatable size and shape, such as to within a fraction of a micron. As such, a MEMS structure is also provided according to the present invention in which a plurality of silicon components that vary in size by no more than 0.2 microns are bonded to a support substrate, such as to form an array having a plurality of MEMS elements that have the same or substantially similar performance characteristics.

    Abstract translation: 提供了一种用于从已经结合到诸如玻璃基板的支撑基板的硅绝缘体（SOI）晶片上制造MEMS结构的方法，以便形成可以精确地和重复地形成的硅部件。 SOI晶片包括处理晶片，设置在处理晶片上的绝缘层和设置在绝缘层上的硅层。 通过反应离子蚀刻在硅层中蚀刻至少一个沟槽。 通过利用反应离子蚀刻，可以精确地限定沟槽，例如在预定宽度的0.1至0.2微米的公差内。 在将支撑衬底粘合到硅层之后，例如通过反应离子蚀刻去除手柄晶片。 此后，通常通过反应离子蚀刻来选择性地去除绝缘层，以形成具有非常精确且可重复的尺寸和形状（例如在几分之一微米）内的所得MEMS结构。 因此，根据本发明还提供了一种MEMS结构，其中尺寸变化不超过0.2微米的多个硅元件被结合到支撑衬底上，例如形成具有多个MEMS元件的阵列 具有相同或基本相似的性能特征。

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