公开(公告)号：US06551446B1

公开(公告)日：2003-04-22

申请号：US09637174

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: C23C1600

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.

Abstract translation: 用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室， 室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。 气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。 增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。 适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

公开(公告)号：US06544429B1

公开(公告)日：2003-04-08

申请号：US09405869

申请日：1999-09-24

Applicant: Hoiman (Raymond) Hung ,  Joseph P. Caulfield ,  Hongchin Shan ,  Kenneth S. Collins ,  Chunshi Cui ,  Michael Rice

Inventor： Hoiman (Raymond) Hung ,  Joseph P. Caulfield ,  Hongchin Shan ,  Kenneth S. Collins ,  Chunshi Cui ,  Michael Rice

IPC: H01L213065

CPC classification number: H01L21/31116

Abstract: A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) to enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in a time oxide etch in which holes and corners have already been formed, for example counterbore vias in a dual damascene structure. In this case, the relative amount of xenon need not be so high, but xenon still reduces faceting of the oxide corners. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases. The plasma etching preferably includes striking the plasma with argon, switching to xenon and the fluorine-based gas but at reduced bias power to stabilize the plasma, and then increasing the bias to a full etching level.

Abstract translation: 等离子体蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。 主要含氟气体，优选六氟丁二烯（C 4 F 6）与显着更大量的稀释气氙（Xe）组合以增强氮化物选择性而不发生蚀刻停止。 该化学反应也可用于在其中形成孔和角的时间氧化物蚀刻中蚀刻氧化物，例如双镶嵌结构中的沉孔。 在这种情况下，氙的相对量不需要太高，但是氙气仍然会减小氧化物角的小面积。 本发明可以与相关的重碳氟化合物和其它氟基蚀刻气体一起使用。 等离子体蚀刻优选地包括用氩气冲击等离子体，切换到氙气和氟基气体，但是以降低的偏置功率来稳定等离子体，然后将偏压增加到完全蚀刻水平。

公开(公告)号：US06453842B1

公开(公告)日：2002-09-24

申请号：US09636700

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: C23C1600

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

Abstract translation: 限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布 板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。 导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

公开(公告)号：US06410449B1

公开(公告)日：2002-06-25

申请号：US09636436

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: H01L21302

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.

Abstract translation: 在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流 环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

公开(公告)号：US06361644B1

公开(公告)日：2002-03-26

申请号：US08936028

申请日：1997-09-23

Applicant: Kenneth S. Collins

Inventor： Kenneth S. Collins

IPC: H01L2100

CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

Abstract translation: 本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统 所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

公开(公告)号：US06218312B1

公开(公告)日：2001-04-17

申请号：US08987509

申请日：1998-10-08

Applicant: Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

Inventor： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC: H01L21302

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

Abstract translation: 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US06193836B1

公开(公告)日：2001-02-27

申请号：US09480313

申请日：2000-01-10

Applicant: Jon Mohn ,  Mei Chang ,  Raymond Hung ,  Kenneth S. Collins ,  Ru-Liang Lee

Inventor： Jon Mohn ,  Mei Chang ,  Raymond Hung ,  Kenneth S. Collins ,  Ru-Liang Lee

IPC: H05H100

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/32467 ,  Y10S156/914

Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.

Abstract translation: 本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统 通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

公开(公告)号：US6095083A

公开(公告)日：2000-08-01

申请号：US892300

申请日：1997-07-14

Applicant: Michael Rice ,  Eric Askarinam ,  Gerhard Schneider ,  Kenneth S. Collins

Inventor： Michael Rice ,  Eric Askarinam ,  Gerhard Schneider ,  Kenneth S. Collins

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  C23C16/00 ,  H05H1/00

CPC classification number: H01L21/31116 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346

Abstract: The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced. Moreover, such access is provided without the need to disconnect utilities or instrumentation, since the release of a latch and pivoting the cold plate assembly away from the chamber body upwards is all that is needed to gain access to either the top of the roof of the processing chamber or the inside of the chamber. Chamber roof cooling is provided through a separable connection which is spring clamped to provide a high confidence that uniform thermal conductivity across a clamped joint is maintained.

Abstract translation: 通过提供真空室顶部组件来增强真空处理室的可维护性和部件更换的情况，真空室顶部组件与真空室主体的连接通过夹紧连接。 屋顶组件所需的配件，例如 冷却，加热，RF功率分别被支撑并终止于支撑冷板的附件，其被单独安装，例如通过从室主体铰接而易于移动。 然后，室的屋顶可以容易地与室主体分离并被更换。 在另外的模式中，可以容易地升高室顶，以便容易地进入处理室内的模块化部件。 暴露于腔室中的等离子体的所有组件都可以轻松访问和更换。 此外，由于释放闩锁并将冷板组件向上远离室体转动，因此提供了这种接入，而不需要断开连接器的使用或仪器，因为所有这些都需要进入屋顶的顶部 处理室或室内。 室顶冷却是通过弹簧夹紧的可分离连接来提供的，以提供保持夹紧接头两端的均匀热导率的高置信度。

公开(公告)号：US6036877A

公开(公告)日：2000-03-14

申请号：US648256

申请日：1996-05-13

Applicant: Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

Inventor： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC: H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  H05H1/00

CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

Abstract: A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US5888414A

公开(公告)日：1999-03-30

申请号：US936777

申请日：1997-09-24

Applicant: Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

Inventor： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel

IPC: C23C16/517 ,  H01L21/311 ,  C23F1/00

CPC classification number: H01J37/32458 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32706 ,  H01L21/31116 ,  H01F2029/143

Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

Abstract translation: 等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。 天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。 可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。