公开(公告)号：US08835901B2

公开(公告)日：2014-09-16

申请号：US13030440

申请日：2011-02-18

Applicant: Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/04 ,  H01L33/12

CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。 发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。 多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。 第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。 第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。

公开(公告)号：US08823016B2

公开(公告)日：2014-09-02

申请号：US13404553

申请日：2012-02-24

Applicant: Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC: H01L29/24 ,  H01L33/12 ,  H01L33/32 ,  H01L29/12 ,  C30B29/40 ,  H01L33/00

CPC classification number: H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

Abstract translation: 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。 主表面与发光层相对。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。

公开(公告)号：US08822250B2

公开(公告)日：2014-09-02

申请号：US13665650

申请日：2012-10-31

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L21/00

CPC classification number: H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

公开(公告)号：US08766311B2

公开(公告)日：2014-07-01

申请号：US13206649

申请日：2011-08-10

Applicant: Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

CPC classification number: H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

Abstract: According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

公开(公告)号：US08698192B2

公开(公告)日：2014-04-15

申请号：US13198105

申请日：2011-08-04

Applicant: Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Hajime Nago ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC: H01L33/26

CPC classification number: H01L33/325 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/32341

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。 发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。 第一p型层与p侧电极接触。 第二p型层与发光部接触。 第三p型层设置在第一p型层和第二p型层之间。 第四p型层设置在第二p型层和第三p型层之间。 第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

公开(公告)号：US08692287B2

公开(公告)日：2014-04-08

申请号：US13222200

申请日：2011-08-31

Applicant: Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.

Abstract translation: 根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。 堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。 堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。 功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。 多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。 第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

公开(公告)号：US20140084296A1

公开(公告)日：2014-03-27

申请号：US13729713

申请日：2012-12-28

Applicant: Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/2003 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/0649 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/12

Abstract: A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface. The stacked multilayer unit is provided on the major surface. The stacked multilayer unit includes N number of buffer layers. The buffer layers include an i-th buffer layer, and an (i+1)-th buffer layer provided on the i-th buffer layer. The i-th buffer layer has an i-th lattice length Wi in a first direction parallel to the major surface. The (i+1)-th buffer layer has an (i+1)-th lattice length W(i+1) in the first direction. A relation that (W(i+1)−Wi)/Wi≦0.008 is satisfied for all the buffer layers. The silicon-containing unit is provided on the stacked multilayer unit. The upper layer unit is provided on the silicon-containing unit.

Abstract translation: 氮化物半导体晶片包括硅衬底，堆叠多层单元，含硅单元和上层单元。 硅衬底具有主表面。 堆叠的多层单元设置在主表面上。 堆叠的多层单元包括N个缓冲层。 缓冲层包括第i个缓冲层和设置在第i个缓冲层上的第（i + 1）个缓冲层。 第i个缓冲层在平行于主表面的第一方向上具有第i个晶格长度Wi。 第（i + 1）个缓冲层在第一方向具有第（i + 1）个格子长度W（i + 1）。 对于所有缓冲层，满足（W（i + 1）-Wi）/ Wi＆nlE; 0.008的关系。 含硅单元设置在堆叠的多层单元上。 上层单元设置在含硅单元上。

公开(公告)号：US08653498B2

公开(公告)日：2014-02-18

申请号：US13032943

申请日：2011-02-23

Applicant: Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/40 ,  H01L33/04

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

Abstract translation: 根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。 层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。 第一电极包括第一接触电极部分。 第二电极包括第二接触电极部分和p侧焊盘电极。 第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

公开(公告)号：US08610106B2

公开(公告)日：2013-12-17

申请号：US13213821

申请日：2011-08-19

Applicant: Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/06

CPC classification number: H01L33/40 ,  H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

公开(公告)号：US20130328075A1

公开(公告)日：2013-12-12

申请号：US13727147

申请日：2012-12-26

Applicant: Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Jumpei Tajima ,  Kotaro Zaima ,  Hiroshi Ono ,  Shinji Yamada ,  Shigeya Kimura ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.

Abstract translation: 根据一个实施例，半导体发光器件包括第一和第二电极，第一和第二半导体层以及发光层。 第一电极包括第一区域，第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分，与第五和第六部分的侧表面接触的第八和第九部分。