摘要:
A regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the slab amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position.
摘要:
An apparatus for generating extreme ultraviolet light by exciting a target material to turn the target material into plasma may include: a frame; a chamber in which the extreme ultraviolet light is generated; a target supply unit for supplying the target material into the chamber; a first connection member for connecting the frame and the chamber flexibly; a mechanism for fixing the target supply unit to the frame; and a second connection member for connecting the target supply unit to the chamber flexibly.
摘要:
An apparatus used with a laser apparatus may include a chamber, a target supply for supplying a target material to a region inside the chamber, a laser beam focusing optical system for focusing a laser beam from the laser apparatus in the region, and an optical system for controlling a beam intensity distribution of the laser beam.
摘要:
An extreme ultraviolet light source apparatus for supplying extreme ultraviolet light to a processing unit for performing processing by using the extreme ultraviolet light. The extreme ultraviolet light source apparatus includes: a chamber in which the extreme ultraviolet light to be supplied to the processing unit is generated; a collector mirror for collecting the extreme ultraviolet light generated in the chamber to output the extreme ultraviolet light to the processing unit; and an optical path connection module for defining a route of the extreme ultraviolet light between the chamber and the processing unit and isolating the route of the extreme ultraviolet light from outside.
摘要:
An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.
摘要:
An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.
摘要:
An optical device may include: a first beam shaping unit configured to transform a first laser beam incident thereon into a second laser beam having an annular cross section; and a first focusing optical element for focusing the second laser beam in a first predetermined location so as to generate a Bessel beam.
摘要:
A laser apparatus for generating extreme ultraviolet (EUV) light at a wavelength of approximately 13 nm is provided. The laser apparatus may be combined with a reduced projection reflective optical system. Systems and methods for generating EUV light are also provided.
摘要:
An EUV light source device properly compensates the wave front of laser beam which is changed by heat. A wave front compensator and a sensor are provided in an amplification system which amplifies laser beam. The sensor detects and outputs changes in the angle (direction) of laser beam and the curvature of the wave front thereof. A wave front compensation controller outputs a signal to the wave front compensator based on the measurement results from the sensor. The wave front compensator corrects the wave front of the laser beam to a predetermined wave front according to an instruction from the wave front compensation controller.
摘要:
A chamber apparatus used with a laser apparatus may include a chamber, a beam expanding optical system, and a focusing optical system. The chamber may be provided with at least one inlet, through which a laser beam outputted from the laser apparatus is introduced into the chamber. The beam expanding optical system is configured to expand the laser beam in diameter. The focusing optical system is configured to focus the laser beam that has been expanded in diameter.