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181.发明授权公开(公告)号：US09735547B1
公开(公告)日：2017-08-15
申请号：US15380156
申请日：2016-12-15
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring
CPC classification number: H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
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公开(公告)号：US09608407B1
公开(公告)日：2017-03-28
申请号：US14878387
申请日：2015-10-08
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Mathew C. Schmidt , Bryan Ellis
CPC classification number: H01S5/1082 , H01S5/0202 , H01S5/0203 , H01S5/2201 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2301/02 , H01S2301/17
Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
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公开(公告)号：US09590392B1
公开(公告)日：2017-03-07
申请号：US14883137
申请日：2015-10-14
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , You-Da Lin , Christiane Elsass
CPC classification number: H01S5/34333 , H01L21/0274 , H01L21/042 , H01L21/28123 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/4828 , H01L33/08 , H01L33/16 , H01L41/332 , H01S5/0014 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S5/3214 , H01S5/3216 , H01S5/3401
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
Abstract translation: 光学装置包括含镓和氮的衬底，其包括以（20-2-1）取向配置的表面区域，（30-3-1）取向或（30-31）取向，在+/- 10 朝向朝向c平面和/或a平面的角度。 还公开了具有超过表面区域的量子阱区的光学器件。
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公开(公告)号：US20170063047A1
公开(公告)日：2017-03-02
申请号：US15351326
申请日：2016-11-14
Applicant: Soraa Laser Diode, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
Abstract translation: 多发射体激光二极管器件包括从载体晶片分离的载体芯片。 载体芯片具有长度和宽度，宽度限定第一间距。 该器件还包括从衬底转移到载体芯片并在键合区附接到载体芯片的多个外延台面区域。 每个外延台面区域以基本上平行的构造布置在载体芯片上，并且以限定相邻外延台面区域之间的距离的第二间距定位。 多个外延台面区域中的每一个包括外延材料，其包括n型包层区域，具有至少一个有源层区域的有源区域和p型包层区域。 该器件还包括一个或多个激光二极管条纹区域，每个区域具有形成空腔区域的一对小面。
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公开(公告)号：US20170051883A1
公开(公告)日：2017-02-23
申请号：US14829927
申请日：2015-08-19
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , Paul Rudy , Eric Goutain
CPC classification number: H01S5/32 , F21V29/70 , F21Y2115/30 , H01L2224/48091 , H01L2224/48465 , H01L2224/49175 , H01S5/005 , H01S5/0216 , H01S5/0217 , H01S5/02248 , H01S5/02296 , H01S5/2201 , H01S5/3203 , H01S5/34333 , H01L2924/00014
Abstract: The present invention provides a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.
Abstract translation: 本发明提供一种使用基于含镓和氮的材料的激光二极管激发源和基于磷光体材料的发光源的组合的集成白色电磁辐射源的装置和方法。 在本发明中，基于镓和氮材料的紫色，蓝色或其他波长激光二极管源与诸如黄色磷光体的荧光体材料紧密结合，以形成紧凑的高亮度和高效率的白色光源。
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Patent Agency Ranking
186.发明授权Optical device structure using GaN substrates and growth structures for laser applications 有权使用GaN衬底的光学器件结构和用于激光应用的生长结构公开(公告)号：US09553426B1
公开(公告)日：2017-01-24
申请号：US15155947
申请日：2016-05-16
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring
CPC classification number: H01S5/2201 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/1085 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3213 , H01S5/34333 , H01S5/4025
Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
Abstract translation: 公开了具有为选定的发光波长配置的结构化有源区的光学器件。
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公开(公告)号：US09520697B2
公开(公告)日：2016-12-13
申请号：US14600506
申请日：2015-01-20
Applicant: Soraa Laser Diode, Inc.
Inventor： Dan Steigerwald , Melvin McLaurin , Eric Goutain , Alexander Sztein , Po Shan Hsu , Paul Rudy , James W. Raring
CPC classification number: H01S5/4087 , H01S5/005 , H01S5/0202 , H01S5/0203 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/0218 , H01S5/0425 , H01S5/22 , H01S5/34333 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S5/4093
Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Abstract translation: 一种用于制造多发射体激光二极管器件的方法，包括提供具有表面区域并形成覆盖在表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，活性区域包括至少一层有源层， n型包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。
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188.发明授权公开(公告)号：US09502859B1
公开(公告)日：2016-11-22
申请号：US14593259
申请日：2015-01-09
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass
CPC classification number: H01S5/3202 , H01S5/0422 , H01S5/2009 , H01S5/2031 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3216 , H01S5/32308 , H01S5/32341 , H01S5/34333 , H01S5/34386 , H01S2301/173
Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
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公开(公告)号：US20160294162A1
公开(公告)日：2016-10-06
申请号：US15176076
申请日：2016-06-07
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , Dan Steigerwald , James W. Raring
CPC classification number: H01S5/4093 , H01L24/83 , H01L24/95 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01S5/0203 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/22 , H01S5/3013 , H01S5/32325 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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公开(公告)号：US09379525B2
公开(公告)日：2016-06-28
申请号：US14312427
申请日：2014-06-23
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , Alexander Sztein , Po Shan Hsu , Eric Goutain , Dan Steigerwald , James W. Raring
CPC classification number: H01S5/4093 , H01L24/83 , H01L24/95 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2924/16152 , H01S5/0203 , H01S5/0216 , H01S5/0217 , H01S5/0224 , H01S5/22 , H01S5/3013 , H01S5/32325 , H01S5/32341 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。
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