摘要:
A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.
摘要:
Flare of an imaging system is measured using resist by employing the imaging system to directly expose a first part of the resist at an image plane of the imaging system to a first dose of radiation and to indirectly expose a second part of the resist as a result of flare. The imaging system exposes the second part of the resist to a second dose of radiation. Flare of the imaging system is determined from a pattern that is formed in the second part of the resist.
摘要:
A phase-sensitive interferometric broadband reflectometer includes an illumination source for generating an optical beam. A beam splitter or other optical element splits the optical beam into probe beam and reference beam portions. The probe beam is reflected by a subject under test and then rejoined with the reference beam. The combination of the two beams creates an interference pattern that may be modulated by changing the length of the path traveled by the probe or reference beams. The combined beam is received and analyzed by a spectrometer.
摘要:
An optical metrology system is disclosed which is configured to minimize the measurement of specularly reflected light and measure primarily scattered light. The system is similar to prior art beam profile measurements but includes a movable baffle to selectively block specularly reflected light. In addition, certain non-periodic, isolated targets are disclosed suitable for evaluating overlay registration.
摘要:
A method of measuring flare in an optical lithographic system utilizes an exposure mask with first and second discrete opaque features each having rotational symmetry of order greater than four and of different respective areas. The exposure mask is positioned in the lithographic system such that actinic radiation emitted by the lithographic system illuminates the sensitive surface of an exposure target through the exposure mask. The extent to which regions of the sensitive surface that are within the geometric image of a feature of the exposure mask are exposed to actinic radiation during due to flare is measured.
摘要:
The instruments of a pulsed nuclear magnetic resonance device are included in a drill collar for evaluating earth formations. The resulting tool makes NMR measurements through an electrically non-conductive shield while the formation is being drilled.
摘要:
An apparatus is disclosed for investigating nuclear magnetic resonance properties of earth formations traversed by a borehole, including a logging device adapted for longitudinal movement in the borehole. The device includes a first subsystem for producing a static magnetic field in the formations and a second subsystem for transmitting electromagnetic energy into the formations and for detecting electromagnetic energy from the formations. The second subsystem comprises an antenna assembly which includes an open-ended shell formed of a magnetically permeable material. An open-ended electrically conductive body is disposed within the shell and is spaced therefrom. A medium whose acoustic impedance is substantially different than the acoustic impedance of the shell and the body is disposed between the shell and the body. An electrically conductive probe is disposed in the body, and an electrically insulating magnetically permeable loading material disposed in the body. The shell is formed of a material having a magnetic permeability that is high enough to render the magnetic reluctance of the loading material several times the magnetic reluctance of the shell. The body is formed of a metal having thickness that is at least several skin depths in said metal at the frequency of the electromagnetic energy and is less than the minimum thickness that would support an acoustic resonance mode in its thickness direction at the frequency of the electromagnetic energy. The apparatus provides a shunt path for the static magnetic field in the region of the antenna that would otherwise have a deleterious effect on the loading material of the antenna and on antenna operation. The apparatus also minimizes undesirable ringing of the antenna.
摘要:
Methods of semiconductor device fabrication techniques using double patterning are disclosed. According to various embodiments of the invention, methods of semiconductor device fabrication using self-aligned double patterning are provided. Particular embodiments of the invention allow creation of logic circuit patterns using two lithographic operations. One embodiment of the invention employs self-aligned double patterning to define two or more sets of parallel line features with a connection feature between two adjacent sets. In such embodiment, the sets of parallel line features along with the connection features are formed using two lithographic masks, without a need for an additional mask layer to form the connection features. In other embodiments, other features in addition to the connection features can be added in the same mask layer.
摘要:
Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.
摘要:
First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.