Method for correcting position-dependent distortions in patterning of integrated circuits
    11.
    发明申请
    Method for correcting position-dependent distortions in patterning of integrated circuits 有权
    用于校正集成电路图案化中的位置相关失真的方法

    公开(公告)号:US20060048091A1

    公开(公告)日:2006-03-02

    申请号:US10933192

    申请日:2004-09-01

    IPC分类号: G06F17/50 G03F1/00 G21K5/00

    CPC分类号: G03F1/36

    摘要: A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.

    摘要翻译: 公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统,通常是屏蔽数据。 通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正,然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。 或者,可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数,例如通过计算重复簇的每个实例的位置处的闪光的值,以及内插 光学接近度校正到这些闪光值。

    Characterizing flare of a projection lens
    12.
    发明申请
    Characterizing flare of a projection lens 有权
    表征投影镜头的耀斑

    公开(公告)号:US20060046167A1

    公开(公告)日:2006-03-02

    申请号:US10933090

    申请日:2004-09-01

    IPC分类号: G03C5/00

    摘要: Flare of an imaging system is measured using resist by employing the imaging system to directly expose a first part of the resist at an image plane of the imaging system to a first dose of radiation and to indirectly expose a second part of the resist as a result of flare. The imaging system exposes the second part of the resist to a second dose of radiation. Flare of the imaging system is determined from a pattern that is formed in the second part of the resist.

    摘要翻译: 使用抗蚀剂通过使用成像系统将成像系统的图像平面处的抗蚀剂的第一部分直接暴露于第一剂量的辐射并且间接暴露抗蚀剂的第二部分来测量成像系统的耀斑,结果 的耀斑。 成像系统将抗蚀剂的第二部分暴露于第二剂量的辐射。 从形成在抗蚀剂的第二部分的图案确定成像系统的光斑。

    Method of characterizing flare
    15.
    发明申请
    Method of characterizing flare 有权
    表征火炬的方法

    公开(公告)号:US20050270523A1

    公开(公告)日:2005-12-08

    申请号:US10860853

    申请日:2004-06-04

    IPC分类号: G01N21/88 G03F1/14 G03F7/20

    摘要: A method of measuring flare in an optical lithographic system utilizes an exposure mask with first and second discrete opaque features each having rotational symmetry of order greater than four and of different respective areas. The exposure mask is positioned in the lithographic system such that actinic radiation emitted by the lithographic system illuminates the sensitive surface of an exposure target through the exposure mask. The extent to which regions of the sensitive surface that are within the geometric image of a feature of the exposure mask are exposed to actinic radiation during due to flare is measured.

    摘要翻译: 一种在光学平版印刷系统中测量光斑的方法利用具有第一和第二离散不透明特征的曝光掩模,每个不透明特征具有大于四的旋转对称性以及不同的相应区域。 曝光掩模位于光刻系统中,使得由光刻系统发射的光化辐射通过曝光掩模照射曝光目标的敏感表面。 测量在曝光掩模的特征的几何图像内的敏感表面的区域在由于耀斑期间暴露于光化辐射的程度。

    Antenna and wear plates for borehole logging apparatus
    17.
    发明授权
    Antenna and wear plates for borehole logging apparatus 失效
    井眼测井仪天线和耐磨板

    公开(公告)号:US5153514A

    公开(公告)日:1992-10-06

    申请号:US657710

    申请日:1991-02-19

    IPC分类号: G01R33/34 G01R33/44 G01V3/32

    摘要: An apparatus is disclosed for investigating nuclear magnetic resonance properties of earth formations traversed by a borehole, including a logging device adapted for longitudinal movement in the borehole. The device includes a first subsystem for producing a static magnetic field in the formations and a second subsystem for transmitting electromagnetic energy into the formations and for detecting electromagnetic energy from the formations. The second subsystem comprises an antenna assembly which includes an open-ended shell formed of a magnetically permeable material. An open-ended electrically conductive body is disposed within the shell and is spaced therefrom. A medium whose acoustic impedance is substantially different than the acoustic impedance of the shell and the body is disposed between the shell and the body. An electrically conductive probe is disposed in the body, and an electrically insulating magnetically permeable loading material disposed in the body. The shell is formed of a material having a magnetic permeability that is high enough to render the magnetic reluctance of the loading material several times the magnetic reluctance of the shell. The body is formed of a metal having thickness that is at least several skin depths in said metal at the frequency of the electromagnetic energy and is less than the minimum thickness that would support an acoustic resonance mode in its thickness direction at the frequency of the electromagnetic energy. The apparatus provides a shunt path for the static magnetic field in the region of the antenna that would otherwise have a deleterious effect on the loading material of the antenna and on antenna operation. The apparatus also minimizes undesirable ringing of the antenna.

    摘要翻译: 公开了一种用于研究由钻孔穿过的地层的核磁共振特性的装置,包括适于在钻孔中纵向移动的测井装置。 该装置包括用于在地层中产生静磁场的第一子系统和用于将电磁能量发射到地层中并用于检测来自地层的电磁能的第二子系统。 第二子系统包括天线组件,天线组件包括由导磁材料形成的开放式外壳。 开口导电体设置在壳体内并与壳体间隔开。 其声阻抗基本上不同于壳体和主体的声阻抗的介质设置在壳体与本体之间。 导电探针设置在体内,以及设置在体内的电绝缘的可渗透的负载材料。 外壳由具有足够高的磁导率的材料形成,使得装载材料的磁阻几倍于壳的磁阻。 主体由金属形成,其厚度在电磁能的频率处至少在所述金属中的几个深度深度,并且小于在电磁频率下支持其厚度方向的声共振模式的最小厚度 能源。 该装置为天线区域内的静态磁场提供分流路径,否则其将对天线的负载材料和天线操作产生有害影响。 该装置还使不期望的天线振铃最小化。

    Method of eliminating a lithography operation
    18.
    发明授权
    Method of eliminating a lithography operation 有权
    消除光刻操作的方法

    公开(公告)号:US08656321B1

    公开(公告)日:2014-02-18

    申请号:US13183749

    申请日:2011-07-15

    IPC分类号: G06F17/50

    摘要: Methods of semiconductor device fabrication techniques using double patterning are disclosed. According to various embodiments of the invention, methods of semiconductor device fabrication using self-aligned double patterning are provided. Particular embodiments of the invention allow creation of logic circuit patterns using two lithographic operations. One embodiment of the invention employs self-aligned double patterning to define two or more sets of parallel line features with a connection feature between two adjacent sets. In such embodiment, the sets of parallel line features along with the connection features are formed using two lithographic masks, without a need for an additional mask layer to form the connection features. In other embodiments, other features in addition to the connection features can be added in the same mask layer.

    摘要翻译: 公开了使用双重图案化的半导体器件制造技术的方法。 根据本发明的各种实施例,提供了使用自对准双重图案化的半导体器件制造方法。 本发明的特定实施例允许使用两个光刻操作创建逻辑电路图案。 本发明的一个实施例采用自对准双重图案化来定义具有两个相邻组之间的连接特征的两组或多组平行线特征。 在这种实施例中,使用两个光刻掩模来形成平行线特征的集合以及连接特征,而不需要额外的掩模层来形成连接特征。 在其他实施例中,除了连接特征之外的其他特征可以添加在相同的掩模层中。

    Method for self-aligned doubled patterning lithography
    19.
    发明授权
    Method for self-aligned doubled patterning lithography 有权
    自对准双重图案平版印刷的方法

    公开(公告)号:US07856613B1

    公开(公告)日:2010-12-21

    申请号:US12264853

    申请日:2008-11-04

    CPC分类号: H01L21/033 G03F1/00

    摘要: Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.

    摘要翻译: 本发明的各种实施例提供用于半导体器件制造和生成用于图案化线特征和大特征的目标布局的光掩模的系统和方法。 本发明的实施例涉及使用自对准双重图案来定义线特征和大特征的目标布局的系统和方法。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    20.
    发明授权
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权
    减少跨晶圆变化对临界尺寸测量的影响的方法和系统

    公开(公告)号:US07588868B2

    公开(公告)日:2009-09-15

    申请号:US10971350

    申请日:2004-10-22

    IPC分类号: G03F9/00 G03C5/00

    摘要: First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    摘要翻译: 进行掩模在晶片上的第一曝光和第二曝光,使得第二曝光的曝光场部分地与第一曝光的曝光场重叠。 确定一组特征的特征,并且确定光学邻近校正模型的参数的值。 对齐功能可用于对齐测量工具。 在另一个实施例中,成像系统的光瞳强度分布是通过用明亮特征曝光放射线检测器的图像场,将检测器定位在距离图像平面一定距离处,并且将检测器的图像场用 明亮的特征,导致来自两次曝光的检测器的图像场的累积曝光。 然后确定检测器的图像场的累积曝光中的空间图案的特性。