公开(公告)号：US20090244809A1

公开(公告)日：2009-10-01

申请号：US12457296

申请日：2009-06-05

Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC: H01G4/06 ,  H01G7/00

CPC classification number: H01G4/33 ,  H01G4/01 ,  H05K1/162 ,  H05K3/244 ,  H05K2201/0179 ,  H05K2201/0347 ,  Y10T29/435

Abstract: A thin-film device includes a substrate, and a capacitor provided on the substrate. The capacitor incorporates a lower conductor layer having a top surface and a side surface; a flattening film disposed to cover the top and side surfaces of the lower conductor layer; a dielectric film disposed on the flattening film; and an upper conductor layer disposed on the dielectric film. The lower conductor layer is composed of an electrode film and a plating film disposed on the electrode film. The dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive and that is smaller than a thickness of the lower conductor layer. A surface roughness in maximum height of a top surface of the flattening film is smaller than that of the top surface of the lower conductor layer and equal to or smaller than the thickness of the dielectric film.

Abstract translation: 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括具有顶表面和侧表面的下导体层; 布置成覆盖下导体层的顶表面和侧表面的平坦化膜; 设置在平坦化膜上的电介质膜; 以及设置在电介质膜上的上导体层。 下导体层由设置在电极膜上的电极膜和镀膜构成。 电介质膜的厚度为0.02〜1μm的范围，小于下导体层的厚度。 平坦化膜的上表面的最大高度的表面粗糙度小于下导体层的上表面的表面粗糙度，并且等于或小于电介质膜的厚度。

公开(公告)号：US20090242409A1

公开(公告)日：2009-10-01

申请号：US12414215

申请日：2009-03-30

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: C25D21/12

CPC classification number: C25D21/12 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877

Abstract: A plating film is formed by the steps of applying a direct current between a cathode and an anode (S10); superimposing an alternating current component on the direct current between the cathode and the anode and detecting a displacement current flowing between the cathode and the anode (S12 to S16); calculating a variation of a surface area of the plating film based on the displacement current (S18 and S20); and controlling the value of the direct current based on the variation of the surface area of the plating film so that the local area current density for the surface area does not change (S22 and S24). Consequently favorable film properties are provided to the plating film.

Abstract translation: 通过在阴极和阳极之间施加直流电流的步骤形成电镀膜（S10）; 在阴极和阳极之间的直流上叠加交流分量并检测在阴极和阳极之间流动的位移电流（S12至S16）; 基于位移电流计算电镀膜的表面积的变化（S18和S20）; 并且基于镀膜的表面积的变化来控制直流电流的值，使得表面积的局部区域电流密度不变（S22和S24）。 因此，向镀膜提供有利的膜性质。

公开(公告)号：US07426914B2

公开(公告)日：2008-09-23

申请号：US11730047

申请日：2007-03-29

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: F02B75/22

CPC classification number: F02F7/0021

Abstract: A crankcase of an engine having a crankshaft therein comprises a skirt part formed in the circumferential direction of the crankshaft and a stiffening rib provided on a wall surface of the skirt part as inclined at a predetermined degree angle to the axis of the crankshaft.

Abstract translation: 具有曲轴的发动机的曲轴箱包括沿曲轴的圆周方向形成的裙部和设置在裙部的壁面上的加强肋，该加强肋以与曲轴的轴线成预定角度倾斜。

公开(公告)号：US20070228512A1

公开(公告)日：2007-10-04

申请号：US11723925

申请日：2007-03-22

Applicant: Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

Inventor： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC: H01L29/00

CPC classification number: H01L27/016

Abstract: A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer used to form a first passive element and an upper conductor layer used to form a second passive element. At each side surface of the device main body, an end face of the lower conductor layer and an end face of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch the end faces of the lower and upper conductor layers, and are thereby connected to the lower and upper conductor layers.

Abstract translation: 薄膜器件包括器件主体和四个端子电极。 装置主体具有四个侧面。 端子电极被设置成接触侧表面的相应部分。 器件主体包括用于形成第一无源元件的下导体层和用于形成第二无源元件的上导体层。 在器件主体的每个侧表面处，下导体层的端面和上导体层的端面彼此电气和物理地连接。 端子电极接触下导体层和上导体层的端面，从而连接到下导体层和上导体层。

公开(公告)号：US20070037304A1

公开(公告)日：2007-02-15

申请号：US11496399

申请日：2006-08-01

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: H01L21/00

CPC classification number: H01L21/31116 ,  H01L21/76831

Abstract: In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound).

Abstract translation: 在制造半导体器件的方法中，多孔膜的绝缘电阻稳定，相邻互连线之间的漏电流提高了信号传播的可靠性。 该方法包括：在半导体衬底上顺序形成多孔膜和图案化抗蚀剂膜; 形成衬底的凹入的暴露表面; 形成覆盖所述凹部的内壁和所述多孔膜的无孔膜; 通过各向异性蚀刻从凹部的底部和非多孔膜选择性地去除无孔膜; 形成覆盖多孔膜和内壁的阻挡金属膜; 并在阻挡金属膜上形成金属膜以填充凹部。 各向异性蚀刻工艺使用具有混合比MR，45 <= MR <= 100的蚀刻气体，其中MR =（（含氮气体的化合物）+（惰性气体））/（气态“含氟化合物”）。

公开(公告)号：US06978757B2

公开(公告)日：2005-12-27

申请号：US11011507

申请日：2004-12-14

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: F16C9/04 ,  F01M9/06 ,  F02M9/06

CPC classification number: F01M9/06

Abstract: A lubrication structure for splash lubrication in an engine includes an oil collector formed as a depression in the outer peripheral surface of the crank pin and an oil groove provided on the big-end of the connecting rod. The oil collector is formed approximately at the center, in an axial direction, of the crank pin. The position of the oil collector is chosen so as to be displaced from an explosive force in an expansion cycle of the engine. The oil groove is provided on the big-end of the connecting rod, and has a first end and a second end. The first end is open in the inner peripheral surface at the center thereof in an axial direction, and the second end is open into the crank case. The oil collector receives oil stored in the crank case and the oil is transferred to the oil groove.

公开(公告)号：US06753587B2

公开(公告)日：2004-06-22

申请号：US10026451

申请日：2001-12-27

Applicant: Akira Furuya ,  Tatsunori Shirai

Inventor： Akira Furuya ,  Tatsunori Shirai

IPC: H01L31105

CPC classification number: H01L31/0352 ,  H01L31/105

Abstract: A high response speed semiconductor photo detecting device having a thin photo absorption layer which avoids an optical efficiency loss. The semiconductor photo detecting devices are formed on a semiconductor substrate having an inclined cleavage face to a principal plane of the substrate. An incoming photo signal is input to the cleavage face perpendicularly.

Abstract translation: 具有避免光学效率损失的薄光吸收层的高响应速度半导体光电检测装置。 半导体光检测装置形成在具有到基板的主平面的倾斜的切割面的半导体基板上。 输入的光信号被垂直地输入到切割面。

公开(公告)号：US5436194A

公开(公告)日：1995-07-25

申请号：US228453

申请日：1994-04-15

Applicant: Makoto Kondo ,  Akira Furuya ,  Chikashi Anayama ,  Mami Sugano ,  Kay Domen ,  Toshiyuki Tanahashi ,  Hiroshi Sekiguchi

Inventor： Makoto Kondo ,  Akira Furuya ,  Chikashi Anayama ,  Mami Sugano ,  Kay Domen ,  Toshiyuki Tanahashi ,  Hiroshi Sekiguchi

IPC: G11B7/125 ,  H01L33/00 ,  H01L33/30 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01L33/305 ,  G11B7/126 ,  G11B7/127 ,  H01L33/0062 ,  H01S5/2232 ,  H01S5/305 ,  H01S5/32325 ,  H01S5/2234 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/2238 ,  H01S5/3077 ,  H01S5/321 ,  Y10S148/095

Abstract: A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

Abstract translation: 一种制造激光二极管的方法，包括以下步骤：在半导体衬底的表面上形成由多个晶体学上不同的表面限定的第一条纹结构; 通过分解In，Ga，Al和P的气态原料，在包括第一条纹结构的半导体衬底上形成InGaAlP的外延层; 其中通过在In，Ga，Al和P的所述源材料中加入Mg的气态源材料，使InGaAlP层掺杂成p型，将InGaAlP层掺杂成p型，同时生长InGaAlP， 与形成条纹结构的晶体面无关，具有基本均匀的载流子浓度水平。

公开(公告)号：US4500640A

公开(公告)日：1985-02-19

申请号：US368035

申请日：1982-04-13

Applicant: Ryoichi Katsumata ,  Tetsuo Oka ,  Akira Furuya

Inventor： Ryoichi Katsumata ,  Tetsuo Oka ,  Akira Furuya

IPC: C12N15/09 ,  C07H21/04 ,  C12N15/77 ,  C12R1/15 ,  C12N1/20 ,  C12N1/00 ,  C12N15/00 ,  C12R1/13

CPC classification number: C12R1/13 ,  C12N15/77 ,  C12R1/15 ,  Y10S435/84 ,  Y10S435/843

Abstract: Disclosed are novel plasmids which can replicate autonomously in microorganisms belonging to the genus Corynebacterium or Brevibacterium and which carry a gene for resistance to streptomycin and/or spectinomycin. The plasmids are useful as a cloning vector.

Abstract translation: 公开了可以在属于棒杆菌属或短杆菌属的微生物中自主复制并且携带对链霉素和/或壮观霉素具有抗性的基因的新型质粒。 质粒可用作克隆载体。

公开(公告)号：US08652966B2

公开(公告)日：2014-02-18

申请号：US13398363

申请日：2012-02-16

Applicant: Akira Furuya

Inventor： Akira Furuya

IPC: H01L21/44

CPC classification number: H01L23/485 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film.

Abstract translation: 半导体制造方法包括：在层间绝缘膜上形成的开口部的底面和侧壁上形成包括第一金属的种子膜和除了开口部之外的位于层间绝缘膜以上的场部，形成抗蚀剂 种子薄膜并用抗蚀剂填充开口部分，去除抗蚀剂的一部分，暴露形成在开口部分的侧壁的上部上的种子膜和场部分，形成包括第二金属的覆盖膜， 电阻率高于第一金属，位于位于开口部分的侧壁的上部和场部分的种子膜上，通过去除抗蚀剂暴露种子膜，并形成包括第一金属的镀膜 在暴露的种子膜上。