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    ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING
    16.
    发明申请
    ELECTRODE, PHOTOVOLTAIC DEVICE, AND METHOD OF MAKING 审中-公开
    电极，光电器件及其制造方法

    公开(公告)号：US20120132268A1

    公开(公告)日：2012-05-31

    申请号：US12956761

    申请日：2010-11-30

    Applicant: Juan Carlos Rojo ,  Bastiaan Arie Korevaar ,  Hongbo Cao ,  Jinbo Cao ,  Joseph Darryl Michael

    Inventor： Juan Carlos Rojo ,  Bastiaan Arie Korevaar ,  Hongbo Cao ,  Jinbo Cao ,  Joseph Darryl Michael

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022466 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    Abstract: In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.

    Abstract translation: 在本发明的一个方面，提供了一种透明电极。 透明电极包括基板和设置在基板上的透明层。 透明层包括（a）包括氧化镉锡的第一区域; （b）包括锡和氧的第二区域; 和（c）介于第一区域和第二区域之间的包括镉，锡和氧的过渡区域，其中过渡区域中镉与锡的原子比在过渡区域的厚度上变化。 第二区域还具有大于第一区域的电阻率的电阻率。 还提出了光电器件，光伏模块，制造方法。

    PHOTOVOLTAIC DEVICES
    18.
    发明申请
    PHOTOVOLTAIC DEVICES 审中-公开
    光伏器件

    公开(公告)号：US20120080067A1

    公开(公告)日：2012-04-05

    申请号：US12894926

    申请日：2010-09-30

    Applicant: Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    Inventor： Loucas Tsakalakos ,  Alok Mani Srivastava ,  Bastiaan Arie Korevaar ,  Omar Ivan Stern Gonzalez ,  Yangang Andrew Xi

    IPC: H01L31/0232 ,  H01L31/042 ,  H01L31/06

    CPC classification number: H01L31/055 ,  C09K11/02 ,  C09K11/025 ,  C09K11/7761 ,  C09K11/7764 ,  Y02E10/52 ,  Y02E10/542

    Abstract: A photovoltaic device including a composite down-converting layer disposed on the device, is presented. The composite down-converting layer includes down-converting material particles dispersed in a matrix. The size of the down-converting material particles is a function of a difference in respective refractive indices (Δn) of the down-converting material and the matrix such that: (i) for Δn less than about 0.05, the size of down-converting material particles is in a range from about 0.5 micron to about 10 microns, and (ii) for Δn at least about 0.05, the size of down-converting material particles is in a range from about 1 nanometer to about 500. A photovoltaic module having a plurality of such photovoltaic devices is also presented.

    Abstract translation: 提出了一种包括设置在该设备上的复合下变换层的光伏器件。 复合下变换层包括分散在基质中的下转换材料颗粒。 下转换材料颗粒的尺寸是下转换材料和基体的折射率（＆Dgr; n）的差异的函数，使得：（i）对于＆Dgr; n小于约0.05，尺寸 的下转换材料颗粒在约0.5微米至约10微米的范围内，和（ii）对于＆Dgr; n至少约0.05，下转换材料颗粒的尺寸在约1纳米至约 还提出了具有多个这种光伏器件的光伏模块。

    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE
    19.
    发明申请
    MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE 审中-公开
    单片集成太阳能模块及其制造方法

    公开(公告)号：US20110290308A1

    公开(公告)日：2011-12-01

    申请号：US12790689

    申请日：2010-05-28

    Applicant: Bastiaan Arie Korevaar

    Inventor： Bastiaan Arie Korevaar

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/0296 ,  H01L31/0368 ,  H01L31/0463 ,  H01L31/075 ,  Y02E10/548

    Abstract: A monolithically integrated photovoltaic (PV) module is provided and includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer, a p-type semiconductor layer, a substantially intrinsic semiconductor layer with a median grain size of at least about five μm and comprising cadmium and tellurium, and an n-type semiconductor layer. The substantially intrinsic layer is disposed between the p-type and the n-type semiconductor layers forming an active semiconductor stack. The back contact metal layer is disposed between the insulating layer and the active semiconductor stack. The PV module further includes a second electrically conductive layer disposed above the active semiconductor stack, at least one first trench extending through the back contact metal layer, at least one second trench extending through the active semiconductor stack, and at least one third trench extending through the second electrically conductive layer.

    Abstract translation: 提供了单片集成光伏（PV）模块并且包括第一导电层和绝缘层。 第一导电层设置在绝缘层的下方。 PV模块还包括背接触金属层，p型半导体层，具有至少约5μm的中值晶粒尺寸并包含镉和碲的基本上本征的半导体层和n型半导体层。 基本上本征层设置在形成有源半导体堆叠的p型和n型半导体层之间。 背接触金属层设置在绝缘层和有源半导体叠层之间。 PV模块还包括设置在有源半导体堆叠上方的第二导电层，延伸穿过背接触金属层的至少一个第一沟槽，延伸穿过有源半导体堆叠的至少一个第二沟槽和延伸穿过 第二导电层。

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