公开(公告)号：US08993991B2

公开(公告)日：2015-03-31

申请号：US13193690

申请日：2011-07-29

Applicant: Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

Inventor： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

IPC: H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

公开(公告)号：US20110133187A1

公开(公告)日：2011-06-09

申请号：US12765705

申请日：2010-04-22

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

公开(公告)号：US07915700B2

公开(公告)日：2011-03-29

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L31/0232 ,  H01L23/58

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20110049660A1

公开(公告)日：2011-03-03

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。