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    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120145999A1

    公开(公告)日：2012-06-14

    申请号：US13193690

    申请日：2011-07-29

    Applicant: Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    Inventor： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    IPC: H01L29/775 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/336

    CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

    Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

    Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

    Semiconductor devices including a nanowire and methods of manufacturing the same
    2.
    发明授权
    Semiconductor devices including a nanowire and methods of manufacturing the same 有权
    包括纳米线的半导体器件及其制造方法

    公开(公告)号：US08993991B2

    公开(公告)日：2015-03-31

    申请号：US13193690

    申请日：2011-07-29

    Applicant: Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    Inventor： Dongwoo Suh ,  Sung Bock Kim ,  Hojun Ryu

    IPC: H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H01L21/02

    CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/068 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696 ,  Y10S977/762

    Abstract: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

    Abstract translation: 提供半导体器件及其制造方法。 该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域 表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开， 并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

    Electroabsorption duplexer
    4.
    发明授权
    Electroabsorption duplexer 有权
    电吸收双工器

    公开(公告)号：US07583869B2

    公开(公告)日：2009-09-01

    申请号：US11451743

    申请日：2006-06-13

    Applicant: Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    Inventor： Young Shik Kang ,  Je Ha Kim ,  Sung Bock Kim ,  Yong Duck Chung ,  Kwang Seong Choi

    IPC: G02B6/12

    CPC classification number: H01S5/026 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/22 ,  H01S5/50

    Abstract: An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.

    Abstract translation: 提供了其中光放大器，光电检测器和光调制器被单片集成以获得无线电光纤（RoF）链路光传输技术中的高射频（RF）增益的电吸收（EA）双工器。 EA双工器包括基板，分离区，光检测/调制单元和光放大单元。 分离区域包括由衬底上的至少一个材料层形成的第一外延层。 第一外延层用作第一光波导。 光检测/调制单元包括由第一外延层上的至少一个材料层形成的第二外延层，以检测和调制光信号。 第二外延层用作第二光波导。 光放大单元包括第二光波导和由第二外延层上的至少一个材料层形成的第三外延层，以放大光信号。 第三外延层用作第三光波导。 光放大单元通过分离区域与光检测/调制单元电分离，并设置在光检测/调制单元的至少一侧。

    Method of fabricating semiconductor optical device
    5.
    发明申请
    Method of fabricating semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US20060189016A1

    公开(公告)日：2006-08-24

    申请号：US11293615

    申请日：2005-12-02

    Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

    IPC: H01L21/00

    CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

    Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

    Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

    Method of manufacturing semiconductor optical device
    6.
    发明授权
    Method of manufacturing semiconductor optical device 有权
    制造半导体光学器件的方法

    公开(公告)号：US06593162B1

    公开(公告)日：2003-07-15

    申请号：US10185137

    申请日：2002-06-27

    Applicant: Kyung Hyun Park ,  Yong Soon Baek ,  Sung Bock Kim ,  Kwang Ryong Oh

    Inventor： Kyung Hyun Park ,  Yong Soon Baek ,  Sung Bock Kim ,  Kwang Ryong Oh

    IPC: H01L2100

    CPC classification number: B82Y20/00 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/106 ,  H01S5/2081 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/34373

    Abstract: The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.

    Abstract translation: 本发明涉及半导体光学器件的制造方法。 本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗 并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

    Self-pulsating laser diode
    7.
    发明授权
    Self-pulsating laser diode 失效
    自脉冲激光二极管

    公开(公告)号：US07813388B2

    公开(公告)日：2010-10-12

    申请号：US11932937

    申请日：2007-10-31

    Applicant: Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    Inventor： Kyung Hyun Park ,  Hyun Sung Ko ,  Young Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    IPC: H01S3/098

    CPC classification number: H01S5/0625 ,  H01S5/0658

    Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

    Abstract translation: 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

    Method of fabricating a quantum device
    9.
    发明授权
    Method of fabricating a quantum device 失效
    制造量子器件的方法

    公开(公告)号：US6074936A

    公开(公告)日：2000-06-13

    申请号：US93195

    申请日：1998-06-08

    Applicant: Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    Inventor： Jeong Rae Ro ,  Sung Bock Kim ,  El Hang Lee

    IPC: H01L21/30 ,  H01L21/20 ,  H01L21/205 ,  H01L21/311 ,  H01L21/36 ,  H01L21/00

    CPC classification number: B82Y10/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/31116 ,  Y10S438/962

    Abstract: A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, forming a V-grooved patterned structures and a reverse quadrilateral pyramid patterned structures by thermal etching to evaporate portions of the quantum well layer that are not protected by line-shaped mask regions and square-shaped mask regions of the masking layer, forming a quantum wires and a quantum dots by alternatively growing a barrier layer and an active layer on a V-grooved patterned substrate and a reverse quadrilateral pyramid patterned substrate.

    Abstract translation: 一种制造量子线结构和器件的方法，以及量子点结构和器件包括以下步骤：在半导体衬底上沉积绝缘层，在绝缘层中形成线图案和方形图案，形成V形槽图案结构和 通过热蚀刻将反向四边形金字塔图案化的结构蒸发成量子阱层的未被掩模层的线状掩模区域和方形掩模区域保护的部分，通过交替生长形成量子线和量子点 阻挡层和V沟槽图案化衬底上的有源层和反向四边形金字塔图案化衬底。

    SELF-PULSATING LASER DIODE
    10.
    发明申请
    SELF-PULSATING LASER DIODE 失效
    自激激光二极管

    公开(公告)号：US20080137694A1

    公开(公告)日：2008-06-12

    申请号：US11932937

    申请日：2007-10-31

    Applicant: Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    Inventor： Kyung Hyun PARK ,  Hyun Sung Ko ,  Yong Ahn Leem ,  Min Yong Jeon ,  Eun Deok Sim ,  Sung Bock Kim

    IPC: H01S3/098 ,  H01S3/08

    CPC classification number: H01S5/0625 ,  H01S5/0658

    Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

    Abstract translation: 提供了一种自脉动激光二极管，包括：用作反射器的分布反馈（DFB）部分; 连接到DFB部分并且在一端具有劈裂小面的增益部分; 相位控制部，其插入在所述DFB部和所述增益部之间; 以及外部射频（RF）输入部分，将外部RF信号施加到DFB部分和增益部分中的至少一个。

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