公开(公告)号：US20080191134A1

公开(公告)日：2008-08-14

申请号：US11923421

申请日：2007-10-24

Applicant: Gilad Almogy ,  Dror Shemesh ,  Pavel Adamec

Inventor： Gilad Almogy ,  Dror Shemesh ,  Pavel Adamec

IPC: G01N23/00 ,  G01T1/00

CPC classification number: H01J37/244 ,  H01J2237/2443 ,  H01J2237/24455 ,  H01J2237/2446 ,  H01J2237/24465 ,  H01J2237/2802 ,  H01J2237/2804

Abstract: A charged particle detector assembly comprises a particle detector, which has at least one particle sensitive region for detecting at least a portion of the spatial distribution of charged particles and for generating a two-dimensional optical signal which correlates to the detected spatial distribution. Further, an image conduit has an input coupled to the particle sensitive region of the particle detector for transmitting the two-dimensional optical signal to at least one optical detector. Further, a selecting means is adapted for selecting at least a portion of the two-dimensional optical signal.

Abstract translation: 带电粒子检测器组件包括粒子检测器，该粒子检测器具有至少一个用于检测带电粒子的空间分布的至少一部分的粒子敏感区域，并用于产生与检测到的空间分布相关的二维光信号。 此外，图像导管具有耦合到粒子检测器的粒子敏感区域的输入端，用于将二维光信号传输到至少一个光学检测器。 此外，选择装置适于选择二维光信号的至少一部分。

公开(公告)号：US07297965B2

公开(公告)日：2007-11-20

申请号：US11119207

申请日：2005-04-28

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: G21K5/10

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract translation: 公开了用于形成物体样品的方法和装置，从物体中提取样品，并对该样品进行微量分析，包括真空室中的表面分析和电子透过性分析。 在一些实施例中，提供了用于对提取的样品的物体横截面进行成像的方法。 任选地，将样品迭代地稀释并在真空室内成像。 在一些实施例中，样品位于包括任选孔的样品支架上。 可选地，样品位于样品载体的表面上，使得物体横截面基本上平行于样品载体的表面。 一旦安装在样品支架上，样品就可以在真空室中进行微量分析，或者加载到装载站上。 在一些实施例中，用基本上正常地入射到物体横截面表面的电子束成像样品。

公开(公告)号：US20060054811A1

公开(公告)日：2006-03-16

申请号：US10530178

申请日：2003-10-08

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: G01N23/00 ,  G21K7/00

CPC classification number: G01N23/2252

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions include a system and method for process monitoring that analyze a cavity before being filled and then analyze emitted X-rays from the cavity after the cavity has been filled with a conductive material. Also included are system and methods for process monitoring that apply a quantitative analysis correction technique on detected X-ray emissions.

Abstract translation: 基于由诸如电子或离子的带电粒子束引起的X射线发射的过程监测的系统和方法包括用于过程监测的系统和方法，其在填充之前分析空腔，然后分析来自腔的发射的X射线 空腔已经填充有导电材料。 还包括用于过程监测的系统和方法，其应用定量分析校正技术检测X射线发射。

公开(公告)号：US20060011868A1

公开(公告)日：2006-01-19

申请号：US11119207

申请日：2005-04-28

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: G21K5/10

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

Abstract translation: 公开了用于形成物体样品的方法和装置，从物体中提取样品，并对该样品进行微量分析，包括真空室中的表面分析和电子透过性分析。 在一些实施例中，提供了用于对提取的样品的物体横截面进行成像的方法。 任选地，将样品迭代地稀释并在真空室内成像。 在一些实施例中，样品位于包括任选孔的样品支架上。 可选地，样品位于样品载体的表面上，使得物体横截面基本上平行于样品载体的表面。 一旦安装在样品支架上，样品就可以在真空室中进行微量分析，或者加载到装载站上。 在一些实施例中，用基本上正常地入射到物体横截面表面的电子束成像样品。

公开(公告)号：US20060011867A1

公开(公告)日：2006-01-19

申请号：US11119230

申请日：2005-08-18

Applicant: Eitan Kidron ,  Dror Shemesh

Inventor： Eitan Kidron ,  Dror Shemesh

IPC: H01J37/08

CPC classification number: G01N1/32 ,  H01J37/185 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/20278 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/208 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.

公开(公告)号：US20120241605A1

公开(公告)日：2012-09-27

申请号：US13460470

申请日：2012-04-30

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J2237/057 ,  H01J2237/2814

Abstract: A method for improving the resolution of a scanning electron microscope, the method including: defining an energy band in response to an expected penetration depth of secondary electrons in an object; illuminating the object with a primary electron beam; and generating images from electrons that arrive at a spectrometer having an energy within the energy band. A scanning electron microscope that includes: a stage for supporting an object; a controller, adapted to receive or define an energy band an energy band in response to an expected penetration depth of secondary electrons in an object; illumination optics adapted to illuminate the object with a primary electron beam; a spectrometer; controlled by the controller so as to selectively reject electrons in response to the defined energy band; and a processor that is adapted to generate images from detection signals provided by the spectrometer.

Abstract translation: 一种用于提高扫描电子显微镜的分辨率的方法，所述方法包括：响应于对象中二次电子的预期穿透深度来定义能带; 用一次电子束照射物体; 以及从能量到达具有能带内的光谱仪的电子产生图像。 一种扫描电子显微镜，包括：用于支撑物体的台; 控制器，适于响应于物体中二次电子的预期穿透深度而接收或限定能带的能带; 适于用一次电子束照射物体的照明光学器件; 光谱仪 由控制器控制，以响应于限定的能带选择性地拒绝电子; 以及适于根据由该光谱仪提供的检测信号产生图像的处理器。

公开(公告)号：US07312446B2

公开(公告)日：2007-12-25

申请号：US10530159

申请日：2003-10-08

Applicant: Dror Shemesh

Inventor： Dror Shemesh

IPC: G01N23/00

CPC classification number: G01N23/2252

Abstract: Systems and methods for process monitoring based upon X-ray emission induced by a beam of charged particles such as electrons or ions. Concept as expressed herein.

Abstract translation: 基于由诸如电子或离子的带电粒子束引起的X射线发射的过程监测的系统和方法。 概念如本文所述。

公开(公告)号：US07233008B1

公开(公告)日：2007-06-19

申请号：US11080036

申请日：2005-03-14

Applicant: Igor Petrov ,  Dror Shemesh

Inventor： Igor Petrov ,  Dror Shemesh

IPC: G03B27/54 ,  G03B27/42

CPC classification number: G03B27/42 ,  G03B27/54

Abstract: A inspection system includes: a lens arrangement adapted to generate a substantially symmetrical electrostatic field about an optical axis and to direct a primary electron beam towards an object that is oriented in relation to the optical axis at a non-normal angle; and at least on additional electrode, positioned outside the lens arrangement such as to increase symmetry of an electromagnetic field in the vicinity of an interaction point between the primary electron beam and the object. A method for inspecting an object includes: passing a primary electron beam, along an optical axis, through a substantially symmetrical electrostatic field defined within an electron lens arrangement; and propagating the primary electron beam from the lens arrangement towards an interaction point with an object that is oriented in relation to the optical axis at a non-normal angle, while maintaining, by at least one additional electrode positioned outside the lens arrangement, a substantially symmetrical electrical field in a vicinity of the interaction point.

Abstract translation: 检查系统包括：透镜装置，其适于产生围绕光轴的基本上对称的静电场，并且将一次电子束引向朝向相对于光轴以非正常角度取向的物体; 并且至少在位于透镜装置外部的另外的电极上，以增加电子束在一次电子束和物体之间的相互作用点附近的对称性。 用于检查物体的方法包括：使沿着光轴的一次电子束通过限定在电子透镜装置内的基本上对称的静电场; 并且将来自透镜装置的一次电子束传播到与以非正常角度相对于光轴定向的物体的相互作用点，同时通过位于透镜装置外部的至少一个附加电极基本上 在相互作用点附近的对称电场。

公开(公告)号：US06900065B2

公开(公告)日：2005-05-31

申请号：US10327398

申请日：2002-12-19

Applicant: Vicky Rashkovan ,  Dror Shemesh

Inventor： Vicky Rashkovan ,  Dror Shemesh

IPC: G01R31/311 ,  H01L23/544 ,  H01L21/66 ,  G01R31/08 ,  G01R31/26

CPC classification number: H01L22/34 ,  G01R31/311

Abstract: An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.

Abstract translation: 一种用于电测试半导体晶片的装置和方法，所述方法包括：（i）在测试图案的某些点放置电荷; （ii）扫描至少一部分测试图案，以增强由缺陷导致的电荷差异; 和（iii）作为扫描的结果收集从至少扫描的部分发射的带电粒子，从而提供关于各个测试结构的电状态的指示。

公开(公告)号：US06670610B2

公开(公告)日：2003-12-30

申请号：US10005190

申请日：2001-11-26

Applicant: Dror Shemesh ,  Ariel Ben-Porath ,  Dubi Shachal ,  Alexey Stepanov

Inventor： Dror Shemesh ,  Ariel Ben-Porath ,  Dubi Shachal ,  Alexey Stepanov

IPC: H01J3726

CPC classification number: H01J37/3056 ,  H01J37/304 ,  H01J2237/28

Abstract: A system and method for directing the object, such as a semiconductor die. The system includes a first images such as a scanning electron microscope, a stage for moving the object and a second imager and miller such as a focused ion beam generator. The object is images to locate a desired location in which the object is to be milled and a landmark that is utilized for directing the miller. The system can include additional steps of milling, analyzing and movement of the object.