公开(公告)号：US20130146760A1

公开(公告)日：2013-06-13

申请号：US13324050

申请日：2011-12-13

申请人： Edward C. Eisner ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： G21K5/04 ,  G21K5/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/15 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/31703

摘要： A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.

摘要翻译： 公开了一种包括扫描元件，光束轮廓仪，分析系统和ZFE限制元件的扫描系统。 扫描元件被配置为在离子束扫描路径上扫描离子束。 光束轮廓仪在离子束扫描路径上扫描时测量离子束的束电流，分析系统分析测量的束电流以检测ZFE条件。 ZFE限制元件，其在光束轮廓仪的上游并且经由反馈路径耦合到分析系统，被配置为基于是否检测到ZFE条件来选择性地对扫描的离子束施加电场。 选择性施加的电场引起扫描光束的变化以限制ZFE条件。

公开(公告)号：US20100155623A1

公开(公告)日：2010-06-24

申请号：US12338644

申请日：2008-12-18

申请人： Edward C. Eisner

发明人： Edward C. Eisner

IPC分类号： H01J37/08 ,  H01J49/00 ,  H01J3/14

CPC分类号： H01J37/3171 ,  H01J2237/1538 ,  H01J2237/24542 ,  H01J2237/30472

摘要： Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.

摘要翻译： 提供离子注入系统和扫描系统，其中，焦点调节部件被设置以调节离子束的聚焦特性，以减少在所述离子束扫描仪的零度磁场的影响。 焦特性可以以提高整个工件扫描的光束轮廓的一致性，或改善在工件的离子注入的一致性进行调整。 方法公开了用于提供一扫描离子束至工件，其包括扫描所述离子束以产生扫描的离子束，调整相对于离子束的焦点属性来在所述离子束的扫描仪的零种效果，和引导 离子束朝向工件。

公开(公告)号：US20090321657A1

公开(公告)日：2009-12-31

申请号：US12145713

申请日：2008-06-25

申请人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

发明人： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

IPC分类号： H01J27/02 ,  H01J27/00

CPC分类号： H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

摘要翻译： 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：US07589333B2

公开(公告)日：2009-09-15

申请号：US11540449

申请日：2006-09-29

申请人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

发明人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC分类号： H01J37/317 ,  H01J37/256

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/3045 ,  H01J2237/043 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/30455 ,  H01J2237/30472

摘要： An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

摘要翻译： 在离子注入期间，在检测到光束不稳定性时，离子束被快速关闭。 离子束由非电弧放电型离子源（例如电子枪离子源或RF离子源）产生或提供。 离子束从起始位置朝向终止位置跨工件扫描。 在扫描期间，监视一个或多个光束特性，例如光束电流，光束通量，形状等。 当一个或多个光束特性偏离可接受的值或水平时，检测到不稳定性。 在检测到的不稳定性下，离子束快速关闭。

公开(公告)号：US07566886B2

公开(公告)日：2009-07-28

申请号：US11503685

申请日：2006-08-14

申请人： Edward C. Eisner ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J37/3023 ,  H01J2237/30488

摘要： An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.

摘要翻译： 一种离子植入系统，其优化生产率，其包括离子发生器，其被配置为通过沿着第一方向的轴扫描离子将离子注入到工件中;可移动台，被配置为沿大致垂直于所述第一方向的第二方向移动所述工件， 离子检测部件，被配置为测量在工件的大致外边缘处的离子剂量;第一方向驱动器，其接收来自控制器的命令以晶片上的快速扫描速度移动或离开晶片的快速扫描速度;以及第二方向驱动器， 从控制器接收命令，以缓慢的扫描速度移动工件移动台。

公开(公告)号：US07550751B2

公开(公告)日：2009-06-23

申请号：US11784709

申请日：2007-04-09

申请人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

发明人： Victor M. Benveniste ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  G21K5/04 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31703

摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

摘要翻译： 本发明的一个实施例涉及一种用于调整扫描离子束的带状光束通量的方法。 在该方法中，以扫描速率扫描离子束，并且当扫描离子束时测量多个动态光束分布。 基于扫描光束的多个测量的动态光束分布来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生校正的带状离子束。 还公开了其它方法和系统。

公开(公告)号：US07453074B2

公开(公告)日：2008-11-18

申请号：US11294975

申请日：2005-12-06

申请人： Edward C. Eisner ,  William DiVergilio

发明人： Edward C. Eisner ,  William DiVergilio

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/08 ,  H01J37/3171

摘要： An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.

摘要翻译： 离子注入机包括用于产生沿着束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以便通过所述工件的表面离子注入 离子束。 离子源包括电离室和限定电离室孔的电离室电极，其中电离室电极包括用于在邻近电离室电极的区域中产生基本均匀的电场的凸起部分。

公开(公告)号：US08803110B2

公开(公告)日：2014-08-12

申请号：US11541087

申请日：2006-09-29

申请人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

发明人： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC分类号： H01J37/317 ,  H01L21/265 ,  H01J37/32

CPC分类号： H01J37/3233 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32935 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01L21/265

摘要： Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

摘要翻译： 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。

公开(公告)号：US20130181139A1

公开(公告)日：2013-07-18

申请号：US13348855

申请日：2012-01-12

申请人： Edward C. EISNER ,  Bo H. VANDERBERG

发明人： Edward C. EISNER ,  Bo H. VANDERBERG

IPC分类号： G21K5/04 ,  G21K5/00 ,  G21K1/10

CPC分类号： H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

摘要翻译： 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。

公开(公告)号：US20120248326A1

公开(公告)日：2012-10-04

申请号：US13077112

申请日：2011-03-31

申请人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

发明人： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC分类号： H01J3/14 ,  G21K5/10

CPC分类号： H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

摘要： One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

摘要翻译： 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。