High modulus, low dielectric constant coatings
    11.
    发明授权
    High modulus, low dielectric constant coatings 失效
    高模量,低介电常数涂层

    公开(公告)号:US06759133B2

    公开(公告)日:2004-07-06

    申请号:US10413034

    申请日:2003-04-14

    IPC分类号: B32B900

    摘要: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR §1.72(b).

    摘要翻译: 具有改善的弹性模量的低介电常数膜。 提供含SiO 2等离子体处理的涂层,通过提供由含有至少2个Si-H基团的树脂分子产生的多孔网络涂层形成涂层,通过加热至足以将多孔网络 涂覆到陶瓷中,并且等离子体处理多孔网络涂层以减少Si-H键的量。 处理多孔网络涂层的等离子体处理提供了具有改进模量但具有较高介电常数的涂层。 因此,等离子体处理的涂层可以退火以提供具有较低介电常数和可比的弹性模量的退火等离子体处理的涂层。 退火的含SiO 2的等离子体处理的涂层的介电常数可以在约1.1至约3.5之间,弹性模量大于或约4GPa。 要强调的是,该摘要被提供以符合要求摘要的规则,这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。 37 CFR§1.72(b)。

    Process for synthesis of silicone resin
    12.
    发明授权
    Process for synthesis of silicone resin 有权
    硅树脂合成方法

    公开(公告)号:US06395825B1

    公开(公告)日:2002-05-28

    申请号:US09561481

    申请日:2000-04-28

    IPC分类号: C08G7708

    CPC分类号: C08G77/06

    摘要: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R2SO4H and alkali metal salts thereof, where R2 is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

    摘要翻译: 水解具有至少三个氯原子键合到每个硅原子上以形成有机硅树脂的氯硅烷的方法。 该方法包括将氢三氯硅烷,四氯硅烷或有机三氯硅烷中的至少一种加入到包含非极性有机溶剂,包含0至约43重量%盐酸的水相和选自下组的表面活性化合物的两相混合物 由式R 2 SO 4 H所述的有机硫酸盐及其碱金属盐组成,其中R 2选自包含约4至16个碳原子的烷基和含有7至约22个碳原子的烷基苯基。

    Method and materials for reverse patterning
    13.
    发明授权
    Method and materials for reverse patterning 失效
    用于反向图案化的方法和材料

    公开(公告)号:US08785113B2

    公开(公告)日:2014-07-22

    申请号:US13386502

    申请日:2010-06-22

    IPC分类号: G03F7/26

    摘要: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译: 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化,以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后,含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方,暴露有机基光致抗蚀剂的整个顶表面。 然后,第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地,新图案可以被转移到下层中。

    Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
    14.
    发明授权
    Silsesquioxane resin systems with base additives bearing electron-attracting functionalities 有权
    倍半硅氧烷树脂体系,具有电子吸引功能的基础添加剂

    公开(公告)号:US08524439B2

    公开(公告)日:2013-09-03

    申请号:US12304263

    申请日:2007-06-27

    IPC分类号: G03F7/039

    CPC分类号: C08K5/5435

    摘要: A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

    摘要翻译: 含有(a)含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物,其中: R是酸解离基团,和(b)7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物,特别适用于193nm和157nm多层(即双层)光刻应用。

    Nanoscale Photolithography
    15.
    发明申请
    Nanoscale Photolithography 审中-公开
    纳米级光刻

    公开(公告)号:US20130189495A1

    公开(公告)日:2013-07-25

    申请号:US13877227

    申请日:2011-11-07

    IPC分类号: B05D1/36

    摘要: A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.

    摘要翻译: 描述了一种可以减小带有表面羟基的图案结构的特征尺寸的简单实用的方法。 图案化结构可以通过任何图案化技术获得,例如光刻,电子束光刻,纳米压印光刻。 该方法包括:(1)通过处理胺剂,优选环状化合物,首先将羟基或硅烷醇富含表面转化为富含胺的表面; (2)在图案化结构的顶部涂覆环氧树脂材料; (3)通过表面引发聚合施加热量时形成额外的层; (4)施加胺偶联剂以再生富含胺的表面; (5)在图案化结构的顶部涂覆环氧树脂材料以形成下一层; (6)重复步骤4和5以形成多层; 该方法允许制造通过常规光刻方法难以达到的各种图案和接触孔的特征尺寸。

    Antireflective coating material
    16.
    发明授权
    Antireflective coating material 失效
    防反射涂料

    公开(公告)号:US08263312B2

    公开(公告)日:2012-09-11

    申请号:US12160325

    申请日:2006-12-07

    IPC分类号: G03F7/00

    摘要: Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronic device.

    摘要翻译: 抗反射涂层,其包含(i)具有式(PhSiO(3-x)/ 2(OH)x)mHSiO(3-x)/ 2(OH)x)n(MeSiO(3-x)/ 2 OH)x)p,其中Ph是苯基,Me是甲基,x具有0,1或2的值; m的值为0.01〜0.99,n为0.01〜0.99,p为0.01〜0.99,m + n + p = 1。 (ii)聚环氧乙烷流体; 和(iii)溶剂; 以及在电子设备上形成所述抗反射涂层的方法。

    Silsesquioxane Resins
    17.
    发明申请
    Silsesquioxane Resins 有权
    倍半硅氧烷树脂

    公开(公告)号:US20110003480A1

    公开(公告)日:2011-01-06

    申请号:US12919052

    申请日:2009-02-03

    摘要: This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH2)rSiO(3−x)/2(OR′)x)m (HSiO(3−x)/2(OR′)x)n (MeSiO(3−x)/2(OR′)x)o (RSiO(3−x)/2(OR′)x)p (R1SiO(3−x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a hydroxyl producing group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.

    摘要翻译: 本发明涉及可用于抗反射涂料的倍半硅氧烷树脂,其中倍半硅氧烷树脂由单元(Ph(CH 2)r SiO(3-x)/ 2(OR')x)m(HSiO(3-x)/ 2 '(x')x(x)n(MeSiO(3-x)/ 2(OR')x)o(RSiO(3-x)/ 2 其中Ph是苯基,Me是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羟基生成基团; 并且R 1选自取代的苯基,酯基,聚醚基团; 巯基,以及活性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中,所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 和m + n + o + p +q≈1。

    Silsesquioxane Resins
    18.
    发明申请
    Silsesquioxane Resins 失效
    倍半硅氧烷树脂

    公开(公告)号:US20110003249A1

    公开(公告)日:2011-01-06

    申请号:US12919039

    申请日:2009-02-03

    摘要: A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0,95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

    摘要翻译: 由单元(Ph(CH 2)r SiO(3-x)/ 2(OR')x)m,(HSiO(3-x)/ 2(OR')x)n'(MeSiO x)/ 2(OR')x)o'(RSiO(3-x)/ 2(OR')x)p,(R1SiO(3-x)/ 2(OR')x)q其中Ph是苯基 组,我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基,酯基,聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂m中具有0至0.95的值; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 并且m + n + o + p + q = 1。

    Silicone resins and process for synthesis
    20.
    发明授权
    Silicone resins and process for synthesis 有权
    硅树脂及其合成方法

    公开(公告)号:US06281285B1

    公开(公告)日:2001-08-28

    申请号:US09328806

    申请日:1999-06-09

    IPC分类号: C08G7708

    CPC分类号: C08G77/06

    摘要: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of alkylsulphonic acid hydrate, alkali metal salt of alkylsulphonic acid, arysulphonic acid hydrate, and alkali metal salt of arylsulphonic acid.

    摘要翻译: 水解具有至少三个氯原子键合到每个硅原子上以形成有机硅树脂的氯硅烷的方法。 该方法包括将氢三氯硅烷,四氯硅烷或有机三氯硅烷中的至少一种加入到包含非极性有机溶剂,包含0至约43重量%盐酸的水相和选自下组的表面活性化合物的两相混合物 由烷基磺酸水合物,烷基磺酸的碱金属盐,芳香磺酸水合物和芳基磺酸的碱金属盐组成。