公开(公告)号：US08524439B2

公开(公告)日：2013-09-03

申请号：US12304263

申请日：2007-06-27

申请人： Sanlin Hu ,  Eric Scott Moyer

发明人： Sanlin Hu ,  Eric Scott Moyer

IPC分类号： G03F7/039

CPC分类号： C08K5/5435

摘要： A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

公开(公告)号：US08148043B2

公开(公告)日：2012-04-03

申请号：US12304162

申请日：2007-06-27

申请人： Sanlin Hu ,  Eric Scott Moyer

发明人： Sanlin Hu ,  Eric Scott Moyer

IPC分类号： G03F7/039 ,  G03F7/075

CPC分类号： C08L83/04 ,  C08G77/04 ,  C08G77/38 ,  C08K5/16 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）选自大体积叔胺，酰亚胺，酰胺和聚合胺的至少一种有机碱添加剂，其中有机碱添加剂含有吸电子基团，条件是有机碱添加剂不是 7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

公开(公告)号：US08088547B2

公开(公告)日：2012-01-03

申请号：US11665506

申请日：2005-09-20

申请人： Sanlin Hu ,  Sina Maghsoodi ,  Eric Scott Moyer ,  Sheng Wang

发明人： Sanlin Hu ,  Sina Maghsoodi ,  Eric Scott Moyer ,  Sheng Wang

IPC分类号： G03C1/00 ,  G03F1/00 ,  C08G77/00 ,  C08G77/12

CPC分类号： G03F7/0757

摘要： A resist composition comprising (A) a hydrogen silsesquioxane resin, (B) an acid dissociable group-containing compound, (C) a photo-acid generator, (D) an organic solvent and optionally (E) additives. The resist composition has improved lithographic properties (such as high etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist.

摘要翻译： 一种抗蚀剂组合物，其包含（A）氢倍半硅氧烷树脂，（B）含酸解离基团的化合物，（C）光酸产生剂，（D）有机溶剂和任选的（E）添加剂。 抗蚀剂组合物具有改进的适合作为光致抗蚀剂的光刻性能（例如高耐蚀刻性，透明度，分辨率，灵敏度，聚焦宽度，线边缘粗糙度和粘附）。

公开(公告)号：US20090312467A1

公开(公告)日：2009-12-17

申请号：US12304263

申请日：2007-06-27

申请人： Sanlin Hu ,  Eric Scott Moyer

发明人： Sanlin Hu ,  Eric Scott Moyer

IPC分类号： C08K5/1545 ,  C08L83/04

CPC分类号： C08K5/5435

摘要： A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

公开(公告)号：US07625687B2

公开(公告)日：2009-12-01

申请号：US10555594

申请日：2004-06-30

申请人： Sanlin Hu ,  Eric Scott Moyer ,  Sheng Wang ,  David Lee Wyman

发明人： Sanlin Hu ,  Eric Scott Moyer ,  Sheng Wang ,  David Lee Wyman

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  C08G77/12

CPC分类号： G03F7/0757 ,  C08G77/04 ,  C08G77/12 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

摘要： This invention pertains to a silsesquioxane resin with improved lithographic properties (such as etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist; a method for in-corporating the fluorinated or non-fluorinated functional groups onto silsesquioxane backbone. The silsesquioxane resins of this invention has the general structure (HSiO3/2)a(RSiO3/2)b wherein; R is an acid dissociable group, a has a value of 0.2 to 0.9 and b has a value of 0.1 to 0.8 and 0.9≦a+b≦1.0.

摘要翻译： 本发明涉及适合作为光致抗蚀剂的具有改进的光刻性质（例如耐蚀刻性，透明度，分辨率，灵敏度，聚焦宽度，线边缘粗糙度和粘合）的倍半硅氧烷树脂; 将氟化或非氟化官能团合并在倍半硅氧烷骨架上的方法。 本发明的倍半硅氧烷树脂具有通式（HSiO 3/2）a（RSiO 3/2）b，其中： R为酸解离基，a为0.2〜0.9，b为0.1〜0.8，0.9 <= a + b <= 1.0。

公开(公告)号：US20090202941A1

公开(公告)日：2009-08-13

申请号：US12304162

申请日：2007-06-27

申请人： Sanlin Hu ,  Eric Scott Moyer

发明人： Sanlin Hu ,  Eric Scott Moyer

IPC分类号： G03F7/075

CPC分类号： C08L83/04 ,  C08G77/04 ,  C08G77/38 ,  C08K5/16 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）选自大体积叔胺，酰亚胺，酰胺和聚合胺的至少一种有机碱添加剂，其中有机碱添加剂含有吸电子基团，条件是有机碱添加剂不是 7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

公开(公告)号：US20120252920A1

公开(公告)日：2012-10-04

申请号：US13513588

申请日：2010-12-02

申请人： Andrew MacMillan ,  Eric Scott Moyer ,  Michael Robert Reiter ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

发明人： Andrew MacMillan ,  Eric Scott Moyer ,  Michael Robert Reiter ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

IPC分类号： C09D183/00 ,  C09K3/00

CPC分类号： C08L83/06 ,  C08G77/14 ,  C08G77/20 ,  C08G77/70 ,  C08G77/80 ,  C08K5/15

摘要： Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.

摘要翻译： 公开了含有由亲水性抑制剂稳定的自由基固化性官能团的倍半硅氧烷树脂组合物。 使用具有清除游离基如抗坏血酸或水杨酸的能力的亲水性抑制剂来稳定树脂。 树脂可用于半导体形成，例如用于抗反射涂层，硬掩模或光致抗蚀剂层。

公开(公告)号：US20120123135A1

公开(公告)日：2012-05-17

申请号：US13386514

申请日：2010-06-22

申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Kasumi Takeuchi ,  Sheng Wang ,  Craig Rollin Yeakle

IPC分类号： B29B13/08 ,  B29C33/38 ,  B29C59/16 ,  C07F7/18

CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。 然后，含有O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。

公开(公告)号：US06576300B1

公开(公告)日：2003-06-10

申请号：US09528835

申请日：2000-03-20

申请人： Ivan Louis Berry, III ,  Kyuha Chung ,  Qingyuan Han ,  Youfan Liu ,  Eric Scott Moyer ,  Michael John Spaulding

发明人： Ivan Louis Berry, III ,  Kyuha Chung ,  Qingyuan Han ,  Youfan Liu ,  Eric Scott Moyer ,  Michael John Spaulding

IPC分类号： C08J718

CPC分类号： H01L21/3122 ,  C01B33/126 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31695 ,  Y10T428/31663

摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds. The annealed, plasma treated coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

摘要翻译： 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由包含至少2个Si-H基团的树脂制备的多孔网络涂层，其中涂层已经被热固化并且介电常数在约1.1至约3.5的范围内，等离子体处理 将涂层转化成多孔二氧化硅的涂层。 网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。 该涂层在低于或约350℃的温度下等离子体处理约15至120秒。等离子体处理的涂层可任选地退火。 与初始多孔涂层相比，等离子体处理的涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度优选超过或约350℃，退火时间优选为至少或约120秒。 退火的等离子体处理的涂层的介电常数在约1.1至约2.4的范围内，并具有改进的弹性模量。

公开(公告)号：US08785113B2

公开(公告)日：2014-07-22

申请号：US13386502

申请日：2010-06-22

申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang

发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang

IPC分类号： G03F7/26

CPC分类号： H01L21/0337 ,  C08G77/04 ,  G03F7/405 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3122

摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

摘要翻译： 将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方，暴露有机基光致抗蚀剂的整个顶表面。 然后，第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。 结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。 可选地，新图案可以被转移到下层中。