公开(公告)号：US20150364199A1

公开(公告)日：2015-12-17

申请号：US14731003

申请日：2015-06-04

Applicant: HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

Inventor： HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

IPC: G11C16/14 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56

CPC classification number: H01L27/10823 ,  G06F11/1048 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.

Abstract translation: 存储器系统具有覆盖操作及其操作控制方法。 非易失性存储器件具有多个存储块，包括沿垂直于衬底的方向堆叠的多个存储单元。 当连接到所选存储块的字线的存储器单元的数据被读取时，基于所读取的数据的错误位级确定回收的需要。 在连接到字线的存储单元中具有擦除状态的存储单元变为软程序状态的情况下，在连接到所选存储块的字线的存储单元中覆盖读取的数据。

公开(公告)号：US20150005500A1

公开(公告)日：2015-01-01

申请号：US14313085

申请日：2014-06-24

Applicant: Nizar HADDAD ,  Heewon LEE ,  Bo QU ,  Sonia RODRIGUEZ ,  Chris Hugh SENANAYAKE

Inventor： Nizar HADDAD ,  Heewon LEE ,  Bo QU ,  Sonia RODRIGUEZ ,  Chris Hugh SENANAYAKE

IPC: B01J31/22 ,  C07D209/04 ,  C07D231/56 ,  C07D307/79 ,  C07C29/145 ,  C07D215/20 ,  C07D333/54

CPC classification number: B01J31/2295 ,  B01J23/462 ,  B01J31/1805 ,  B01J31/1815 ,  B01J31/1825 ,  B01J31/24 ,  B01J31/2471 ,  B01J2231/643 ,  B01J2531/0238 ,  B01J2531/821 ,  C07B53/00 ,  C07C29/145 ,  C07C29/156 ,  C07D209/04 ,  C07D215/20 ,  C07D231/56 ,  C07D307/79 ,  C07D333/54 ,  C07D405/04 ,  C07F15/0046 ,  C07F15/0053 ,  C07C35/23 ,  C07C35/52 ,  C07C33/46 ,  C07C33/22

Abstract: Disclosed are novel ruthenium compounds of formula (Ia) and (Ib): wherein R1 and the moiety are defined herein. Also disclosed is a process for using these novel ruthenium compounds as catalysts for asymmetric hydrogenation and transfer hydrogenation of ketones with high reactivities and excellent selectivities.

Abstract translation: 公开了式（Ia）和（Ib）的新型钌化合物：其中R 1和该部分在本文中定义。 还公开了使用这些新型钌化合物作为催化剂用于具有高反应性和优异的选择性的酮的不对称氢化和转移氢化的方法。

公开(公告)号：US20080293972A1

公开(公告)日：2008-11-27

申请号：US12092454

申请日：2006-11-01

Applicant: Fabrice Gallou ,  Heewon Lee ,  Chris Hugh Senanayake ,  Jinhua J. Song ,  Zhulin Tan ,  Jinghua Xu ,  Nathan K. Yee

Inventor： Fabrice Gallou ,  Heewon Lee ,  Chris Hugh Senanayake ,  Jinhua J. Song ,  Zhulin Tan ,  Jinghua Xu ,  Nathan K. Yee

IPC: C07C213/02 ,  C07C251/44

CPC classification number: C07C213/02 ,  C07C249/08 ,  C07C251/44 ,  C07C2601/16 ,  C07C217/84

Abstract: Disclosed is a process for preparing substituted anisidines of formula I starting from substituted cyclic hydroxy-ketones II via aromatization through a substituted oxime intermediate IV in which R is C1-C6 alkyl or halogen, and Alk is C1-C6 alkyl. The substituted anisidines of formula I have been found to be useful as intermediates in the preparation of agents for the treatment of hepatitis C viral (HCV) infections.

Abstract translation: 公开了通过芳族化通过其中R是C 1 -C 6烷基或卤素的取代的肟中间体IV和Alk是C 1 -C 6烷基的取代的环状羟基酮II制备取代的茴香胺的方法。 已经发现式I的取代的茴香醚可用作制备用于治疗丙型肝炎病毒（HCV）感染的药剂的中间体。

公开(公告)号：US10133665B2

公开(公告)日：2018-11-20

申请号：US15701978

申请日：2017-09-12

Applicant: Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

Inventor： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

IPC: G06F12/02 ,  G06F3/06

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US10049755B2

公开(公告)日：2018-08-14

申请号：US15423629

申请日：2017-02-03

Applicant: Heewon Lee ,  Sari Go ,  Seungkyung Ro ,  Seongnam Kwon

Inventor： Heewon Lee ,  Sari Go ,  Seungkyung Ro ,  Seongnam Kwon

IPC: G11C16/34 ,  G06F3/06 ,  G11C16/04

Abstract: A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes multiple memory blocks, each of which includes memory cells. The controller reads data from selected memory cells of a memory block selected from the memory blocks during a read operation. The selected memory cells correspond to both a word line and a string selection line selected as a read target. The controller increases a read count by a read weight corresponding to the selected word line and string selection line of the selected memory block, and performs a refresh operation on the selected memory cells if the read count reaches a threshold value. In the selected memory block, two or more read weights are assigned according to locations of the string selection lines and the word lines.

公开(公告)号：US20180143762A1

公开(公告)日：2018-05-24

申请号：US15634100

申请日：2017-06-27

Applicant: Chanha KIM ,  Hyunkyo OH ,  Oak-Ha KIM ,  Seungkyung RO ,  Jong-Nam BAEK ,  Donggi LEE ,  Jinwook LEE ,  Heewon LEE

Inventor： Chanha KIM ,  Hyunkyo OH ,  Oak-Ha KIM ,  Seungkyung RO ,  Jong-Nam BAEK ,  Donggi LEE ,  Jinwook LEE ,  Heewon LEE

IPC: G06F3/06 ,  G06N3/04 ,  G06N5/04 ,  G06N99/00

CPC classification number: G06F3/061 ,  G06F3/0614 ,  G06F3/0652 ,  G06F3/0653 ,  G06F3/0656 ,  G06F3/0679 ,  G06F11/00 ,  G06F12/0238 ,  G06F12/0246 ,  G06N3/04 ,  G06N3/063 ,  G06N5/04 ,  G06N99/005 ,  G11C11/5642

Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.

公开(公告)号：US20180067697A1

公开(公告)日：2018-03-08

申请号：US15605404

申请日：2017-05-25

Applicant: Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

Inventor： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

IPC: G06F3/06 ,  G06N99/00

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0656 ,  G06F3/0679 ,  G06N99/005 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483

Abstract: A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

公开(公告)号：US09627388B2

公开(公告)日：2017-04-18

申请号：US14731003

申请日：2015-06-04

Applicant: Hee-Woong Kang ,  Suejin Kim ,  Heewon Lee

Inventor： Hee-Woong Kang ,  Suejin Kim ,  Heewon Lee

IPC: G11C29/00 ,  H01L27/108 ,  G11C11/56 ,  G11C29/52 ,  H01L23/528 ,  H01L49/02 ,  G11C16/04 ,  G06F11/10 ,  G11C29/42 ,  G11C29/04 ,  H01L27/11582

CPC classification number: H01L27/10823 ,  G06F11/1048 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.

公开(公告)号：US20160110114A1

公开(公告)日：2016-04-21

申请号：US14825853

申请日：2015-08-13

Applicant: Sangkwon MOON ,  Seung-Yeon LEE ,  Heewon LEE ,  In Hwan DOH ,  NamWook KANG

Inventor： Sangkwon MOON ,  Seung-Yeon LEE ,  Heewon LEE ,  In Hwan DOH ,  NamWook KANG

IPC: G06F3/06

CPC classification number: G06F12/0246 ,  G06F3/0614 ,  G06F3/0652 ,  G06F3/0679 ,  G06F12/0253 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/7205 ,  G06F2212/7209

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

Abstract translation: 一种操作数据存储装置的方法包括在从每个存储块被物理擦除的时间点经过基准时间的时间点获取第一间隔和第二间隔来编程非完全编程的存储器块， 基于第一间隔和第二间隔计算干扰指数，基于干扰指数选择用于垃圾收集的受害者块，并将受害者块的有效页数据复制到空闲块中。 第一间隔由每个存储块被物理擦除的时间点和每个存储器块完全编程的时间点定义。 第二间隔是在每个存储器块被完全编程的时间点之后保持完全编程状态的间隔。

公开(公告)号：US20120265928A1

公开(公告)日：2012-10-18

申请号：US13446155

申请日：2012-04-13

Applicant: Kui-Yon Mun ,  Heewon Lee

Inventor： Kui-Yon Mun ,  Heewon Lee

IPC: G06F12/00

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0688 ,  G11C16/10 ,  G11C16/30 ,  G11C16/3418 ,  G11C16/349 ,  G11C29/52

Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.

Abstract translation: 随机序列数据基于分配给所选择的存储器空间的种子顺序生成，并且所选择的存储器空间的访问请求片段中的一个被逻辑地与顺序生成的随机序列数据组合以传送访问请求片段。 迭代执行顺序生成和逻辑组合，直到所有传送的剩余访问请求片段为止。