中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

105 records (took 0.023 seconds)

    METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE
    13.
    发明申请
    METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE 有权
    制造薄膜晶体管基板的方法和薄膜晶体管基板中使用的感光性组合物

    公开(公告)号：US20090030103A1

    公开(公告)日：2009-01-29

    申请号：US12170487

    申请日：2008-07-10

    Applicant: Hoon KANG ,  Jae-sung Kim ,  Yang-ho Jung ,  Hi-kuk Lee

    Inventor： Hoon KANG ,  Jae-sung Kim ,  Yang-ho Jung ,  Hi-kuk Lee

    IPC: H01L21/28 ,  C08F2/46 ,  C08G59/00

    CPC classification number: H01L27/1288 ,  H01L27/1214

    Abstract: Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.

    Abstract translation: 公开了一种制造具有高光敏感性，耐热性，耐冲击性的光致变化薄膜晶体管基板的方法及使用该薄膜晶体管基板的方法，该方法包括：在绝缘基片上形成数据线，在其上形成有机绝缘膜 数据线通过应用包含三元共聚物的光敏组合物，其中三元共聚物衍生自不饱和羧酸，不饱和羧酸酐或其混合物，不饱和环氧基化合物和烯属化合物的单体。

    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME
    15.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME 有权
    光电组合物及其制造方法使用薄膜晶体管基板

    公开(公告)号：US20070259272A1

    公开(公告)日：2007-11-08

    申请号：US11554194

    申请日：2006-10-30

    Applicant: Hi-Kuk LEE ,  Woo-Seok JEON ,  Doo-Hee JUNG ,  Jeong-Min PARK ,  Deok-Man KANG ,  Si-Young JUNG ,  Jae-Young CHOI

    Inventor： Hi-Kuk LEE ,  Woo-Seok JEON ,  Doo-Hee JUNG ,  Jeong-Min PARK ,  Deok-Man KANG ,  Si-Young JUNG ,  Jae-Young CHOI

    IPC: G03C5/00

    CPC classification number: H01L27/1288 ,  G03F7/0233 ,  G03F7/0236 ,  H01L27/1214

    Abstract: A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. A content of the acryl resin is about 1% to about 15% by weight based on a total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

    Abstract translation: 光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。 酚醛清漆树脂的重均分子量不小于约30,000。 丙烯酸树脂的重均分子量不小于约20,000。 基于树脂混合物的总重量，丙烯酸树脂的含量为约1重量％至约15重量％。 当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。 因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
    17.
    发明申请
    Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same 有权
    光敏树脂组合物，薄膜晶体管基板的制造方法以及使用该薄膜晶体管基板的公共电极基板的制造方法

    公开(公告)号：US20060275700A1

    公开(公告)日：2006-12-07

    申请号：US11445846

    申请日：2006-06-02

    Applicant: Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

    Inventor： Hi-Kuk Lee ,  Dong-Ki Lee ,  Jae-Sung Kim ,  Byung-Uk Kim ,  Hyoc-Min Youn ,  Ki-Hyuk Koo ,  Joo-Pyo Yun ,  Sang-Gak Choi

    IPC: G03C1/00

    CPC classification number: G03F7/0233 ,  G02F1/133707 ,  G02F1/133711 ,  G03F7/40

    Abstract: A photosensitive resin composition for an organic layer pattern includes about 100 parts by weight of an acryl-based copolymer and about 5 to about 100 parts by weight of a 1,2-quinonediazide compound. The acryl-based copolymer is prepared by copolymerizing about 5 to about 60 percent by weight of an isobonyl carboxylate-based compound based on a total weight of the acryl-based copolymer, about 10 to about 30 percent by weight of an unsaturated compound carrying an epoxy group, about 20 to about 40 percent by weight of an olefin-based unsaturated compound, and about 10 to about 40 percent by weight of one selected from unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, and a mixture thereof. Methods of manufacturing a TFT substrate and a common electrode substrate using the photosensitive resin composition are also provided. Advantageously, the organic layer pattern may have a mountain structure having an improved local flatness without concave and convex structures.

    Abstract translation: 用于有机层图案的感光性树脂组合物包括约100重量份的丙烯酸类共聚物和约5至约100重量份的1,2-醌二叠氮化合物。 基于丙烯酸类的共聚物通过基于丙烯酸类共聚物的总重量共聚约5至约60重量％的基于羧酸异冰片的化合物来制备，约10至约30重量％的不饱和化合物携带 约20至约40重量％的烯烃基不饱和化合物，和约10至约40重量％的选自不饱和羧酸，不饱和羧酸酐及其混合物的一种。 还提供了使用该感光性树脂组合物制造TFT基板和公共电极基板的方法。 有利地，有机层图案可以具有具有改进的局部平坦度而没有凹凸结构的山体结构。

    Display device, method of manufacturing the same and mask for manufacturing the same
    18.
    发明申请
    Display device, method of manufacturing the same and mask for manufacturing the same 有权
    显示装置及其制造方法及其制造用掩模

    公开(公告)号：US20060274236A1

    公开(公告)日：2006-12-07

    申请号：US11434487

    申请日：2006-05-15

    Applicant: Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

    Inventor： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

    IPC: G02F1/1333

    CPC classification number: G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

    Abstract translation: 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分将邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

    Photoresist for enhanced patterning performance
    19.
    发明申请
    Photoresist for enhanced patterning performance 审中-公开
    光刻胶用于增强图案性能

    公开(公告)号：US20060177766A1

    公开(公告)日：2006-08-10

    申请号：US11348855

    申请日：2006-02-06

    Applicant: Dong-Ki Lee ,  Hi-Kuk Lee

    Inventor： Dong-Ki Lee ,  Hi-Kuk Lee

    IPC: G03C1/76

    CPC classification number: G03F7/0236

    Abstract: A photoresist is composed of an alkali soluble resin, a photosensitive agent and a solvent. The alkali soluble resin includes a first type novolak resin synthesized from meta-cresol, and the first novolak resin has an average molecular weight of about 8000 to 25000 and a polydispersity index of four or less. The content of the first type novolak resin in the alkali soluble resin is about 5 to 30 wt. %. The photoresist can further include a second type novolak resin synthesized from a mixture of meta-cresol and para-cresol. The second novolak resin has an average molecular weight of about 2000 to 6000, and the weight ratio of meta-cresol to para-cresol is 4:6. The content of the second type novolak resin in the alkali soluble resin is about 70 to 95 wt. %.

    Abstract translation: 光致抗蚀剂由碱溶性树脂，光敏剂和溶剂组成。 碱溶性树脂包括由间甲酚合成的第一种酚醛清漆树脂，第一酚醛清漆树脂的平均分子量为约8000〜25000，多分散指数为4以下。 碱溶性树脂中的第一种酚醛清漆树脂的含量为约5〜30wt。 ％。 光致抗蚀剂可以进一步包括由间甲酚和对甲酚的混合物合成的第二类酚醛清漆树脂。 第二酚醛清漆树脂的平均分子量为约2000〜6000，间甲酚与对甲酚的重量比为4:6。 碱溶性树脂中第二类酚醛清漆树脂的含量为约70〜95重量％。 ％。

Patent Agency Ranking