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59 条记录 (耗时 0.019 秒)

    High throughput measurement of via defects in interconnects
    11.
    发明申请
    High throughput measurement of via defects in interconnects 有权
    互连中通孔缺陷的高通量测量

    公开(公告)号：US20050214956A1

    公开(公告)日：2005-09-29

    申请号：US10813407

    申请日：2004-03-29

    申请人： Jiping Li ,  Peter Borden ,  Edgar Genio

    发明人： Jiping Li ,  Peter Borden ,  Edgar Genio

    IPC分类号： G01N25/18 ,  G01N25/72 ,  H01L23/544 ,  H01L21/66

    CPC分类号： G01N25/18 ,  G01N25/72

    摘要： Heat is applied to a conductive structure that includes one or more vias, and the temperature at or near the point of heat application is measured. The measured temperature indicates the integrity or the defectiveness of various features (e.g. vias and/or traces) in the conductive structure, near the point of heat application. Specifically, a higher temperature measurement (as compared to a measurement in a reference structure) indicates a reduced heat transfer from the point of heat application, and therefore indicates a defect. The reference structure can be in the same die as the conductive structure (e.g. to provide a baseline) or outside the die but in the same wafer (e.g. in a test structure) or outside the wafer (e.g. in a reference wafer), depending on the embodiment.

    摘要翻译： 将热施加到包括一个或多个通孔的导电结构，并且测量在加热点处或附近的温度。 测量的温度表示导热结构中靠近加热点的各种特征（例如通路和/或迹线）的完整性或缺陷。 具体而言，较高的温度测量（与参考结构中的测量值相比）表示从热施加点减少的热传递，因此表示缺陷。 参考结构可以与导电结构（例如，提供基线）或模具外部在相同的晶片（例如，在测试结构中）或晶片外部（例如，在参考晶片中）处于相同的裸片中，这取决于 该实施例。

    Evaluating sidewall coverage in a semiconductor wafer
    12.
    发明授权
    Evaluating sidewall coverage in a semiconductor wafer 有权
    评估半导体晶片中的侧壁覆盖

    公开(公告)号：US06911349B2

    公开(公告)日：2005-06-28

    申请号：US09788273

    申请日：2001-02-16

    申请人： Jiping Li ,  Peter G. Borden

    发明人： Jiping Li ,  Peter G. Borden

    IPC分类号： G01N21/55 ,  G01R31/307 ,  G01R31/26 ,  H01L21/66

    CPC分类号： G01N21/55 ,  G01R31/307

    摘要： A sidewall or other feature in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. A single beam may be used if it is polarized in a direction substantially perpendicular to a longitudinal direction of the sidewall. A portion of the energy of the beam is absorbed by the sidewall, thereby to cause a decrease in reflectance when compared to reflectance by a flat region. Alternatively, two beams may be used, of which a first beam applies heat to the feature itself or to a region adjacent to the feature, and a second beam is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature. The elevation in temperature that is measured can be either of the feature itself, or of a region adjacent to the feature.

    摘要翻译： 通过用至少一束电磁辐射照射晶片并测量由晶片反射的光束的一部分的强度来评估半导体晶片中的侧壁或其它特征。 测量之间的反射率变化提供了特征属性的量度。 根据实施例，该变化可以是反射率的降低或反射率的增加。 如果沿着与侧壁的纵向方向基本垂直的方向极化，则可以使用单个光束。 光束的能量的一部分被侧壁吸收，从而当与平坦区域的反射率相比时，反射率降低。 或者，可以使用两个光束，其中第一光束对特征本身或与特征相邻的区域施加热量，并且第二光束用于测量由于热传递引起的温度升高引起的反射率的增加 通过功能。 所测量的温度升高可以是特征本身，也可以是与特征相邻的区域。

    Melt depth determination using infrared interferometric technique in pulsed laser annealing
    14.
    发明授权
    Melt depth determination using infrared interferometric technique in pulsed laser annealing 有权

    公开(公告)号：US10219325B2

    公开(公告)日：2019-02-26

    申请号：US13906118

    申请日：2013-05-30

    申请人： Jiping Li

    发明人： Jiping Li

    IPC分类号： H05B6/00 ,  G01B11/06 ,  H01L21/67

    摘要： Methods and apparatus for measuring the melt depth of a substrate during pulsed laser melting are provided. The apparatus can include a heat source, a substrate support with an opening formed therein, and an interferometer positioned to direct coherent radiation toward the toward the substrate support. The method can include positioning the substrate with a first surface in a thermal processing chamber, heating a portion of the first surface with a heat source, directing infrared spectrum radiation at a partially reflective mirror creating control radiation and interference radiation, directing the interference radiation to a melted surface and directing the control radiation to a control surface, and measuring the interference between the reflected radiation. The interference fringe pattern can be used to determine the precise melt depth during the melt process.

    TEMPERATURE MEASUREMENT USING SILICON WAFER REFLECTION INTERFERENCE
    15.
    发明申请
    TEMPERATURE MEASUREMENT USING SILICON WAFER REFLECTION INTERFERENCE 审中-公开
    使用硅波反射干涉的温度测量

    公开(公告)号：US20150221535A1

    公开(公告)日：2015-08-06

    申请号：US14170201

    申请日：2014-01-31

    申请人： Andrew Nguyen ,  Jiping Li ,  Aaron Hunter

    发明人： Andrew Nguyen ,  Jiping Li ,  Aaron Hunter

    IPC分类号： H01L21/67 ,  G01K11/12

    CPC分类号： H01L21/67248 ,  G01K11/125

    摘要： Temperature measurement of a silicon wafer is described using the interference between reflections off surfaces of the wafer. In one example, the invention includes a silicon processing chamber, a wafer holder within the chamber to hold a silicon substrate for processing, and a laser directed to a surface of the substrate. A photodetector receives light from the laser that is reflected off the surface directly and through the substrate and a processor determines a temperature of the silicon substrate based on the received reflected light.

    摘要翻译： 使用晶片表面之间的反射之间的干涉来描述硅晶片的温度测量。 在一个示例中，本发明包括硅处理室，用于保持用于处理的硅衬底的室内的晶片保持器，以及指向衬底表面的激光。 光电检测器接收来自激光器的光，该光从该表面直接反射并通过基板，并且处理器基于所接收的反射光来确定硅基板的温度。