Abstract:
Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.
Abstract:
Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.
Abstract:
An electronic device and methods of manufacturing the same are disclosed. One method of manufacturing the electronic device includes forming an electrical device on a first substrate, depositing a passivation layer on the electrical device, printing a palladium-containing ink on exposed aluminum pads in or on the electrical device, converting the palladium-containing ink to a palladium-containing layer, and forming a conductive pad or bump on the palladium-containing layer. The passivation layer exposes the aluminum pads.
Abstract:
A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
Abstract:
Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
Abstract:
A tag or smart label including a humidity sensor, and methods of manufacturing and using the same, are disclosed. The tag or smart label includes a substrate or backplane with a battery or antenna, a humidity sensor, and an integrated circuit thereon. The integrated circuit is in electrical communication with the humidity sensor and the antenna or battery, and is configured to process a signal from the humidity sensor corresponding to the humidity level or value in the environment to be monitored, and provide or generate a signal that represents the humidity level/value. The humidity sensor includes first and second electrodes that are a predetermined distance apart, a humidity-sensitive material having one or more electrical, mechanical or chemical properties that vary as a function of the humidity level/value, and a water- and/or humidity-permeable membrane covering the humidity-sensitive material.
Abstract:
A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.
Abstract:
Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
Abstract:
Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
Abstract:
A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.