Epitaxial Structures, Methods of Forming the Same, and Devices Including the Same
    11.
    发明申请
    Epitaxial Structures, Methods of Forming the Same, and Devices Including the Same 有权
    外延结构,其形成方法及包括其的装置

    公开(公告)号:US20110240997A1

    公开(公告)日:2011-10-06

    申请号:US13081257

    申请日:2011-04-06

    Abstract: Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.

    Abstract translation: 公开了外延结构,制造外延结构的方法和结合这种外延结构的器件。 方法和结构采用液相IVA族半导体元件前体油墨(例如,包括环和/或聚硅烷)并且具有相对较好的膜质量(例如质地,密度和/或纯度)。 当IVA半导体元件前体油墨沉积在(多)晶体衬底表面上时,IVA半导体元件前体油墨形成外延膜或特征,并充分加热以使IVA族半导体前体膜或特征采用衬底表面的(多)晶体结构。 结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言,具有提高的功率转换效率,由于改善的膜质量和/或在外延膜和 在电影上形成的触点。

    Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films
    12.
    发明申请
    Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films 有权
    金属油墨,其制造方法以及印刷和/或形成金属膜的方法

    公开(公告)号:US20090004370A1

    公开(公告)日:2009-01-01

    申请号:US12131002

    申请日:2008-05-30

    Abstract: Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.

    Abstract translation: 公开了可印刷金属配方,制备方法,以及从金属油墨前体涂布或印刷薄膜的方法。 金属配方通常包括一种或多种组合物4,5,6,7,8,9,10,11或12金属盐或金属配合物,一种或多种适于促进制剂涂布和/或印刷的溶剂,以及 一种或多种任选的添加剂,其在将金属盐或金属络合物还原成元素金属和/或其合金时形成(仅)气态或挥发性副产物。 制剂可以通过将金属盐或金属络合物和溶剂组合,并将金属盐或金属络合物溶解在溶剂中来形成制剂, 。 薄膜可以通过在基底上涂覆或印刷金属制剂来制备; 除去溶剂以形成含金属的前体膜; 并还原含金属的前体膜。

    Method of making a silicon-containing film
    14.
    发明授权
    Method of making a silicon-containing film 有权
    制造含硅膜的方法

    公开(公告)号:US08603426B1

    公开(公告)日:2013-12-10

    申请号:US13730432

    申请日:2012-12-28

    CPC classification number: C01B6/00 C01B6/003 C01B6/34

    Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法,包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性,膜形态和/或载流子迁移率。 此外,本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的(环)硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用(例如显示装置或RF ID标签)的质量的半导体薄膜结构,同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺, 与传统的光刻工艺。

    Methods of making metal silicide contacts, interconnects, and/or seed layers
    15.
    发明授权
    Methods of making metal silicide contacts, interconnects, and/or seed layers 有权
    制造金属硅化物接触,互连和/或种子层的方法

    公开(公告)号:US08158518B2

    公开(公告)日:2012-04-17

    申请号:US12175450

    申请日:2008-07-17

    Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

    Abstract translation: 公开了使用包含硅化物形成金属的油墨形成触点(和任选的局部互连)的方法,诸如二极管和/或包括这种触点的晶体管的电气器件,(可选的)局部互连)以及用于形成这种器件的方法。 形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上,干燥油墨以形成形成硅化物的金属前体,以及加热形成硅化物的金属前体和硅表面以形成金属硅化物 联系。 任选地,可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上,以形成含金属互连。 此外,一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。 可以使用这种印刷的接触和/或局部互连来制造电子器件,例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连,或者替代地,如果需要用于接触和互连线的不同金属,印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量,并且不一定需要任何蚀刻。

    Humidity sensor, wireless device including the same, and methods of making and using the same

    公开(公告)号:US10115051B2

    公开(公告)日:2018-10-30

    申请号:US15226671

    申请日:2016-08-02

    Abstract: A tag or smart label including a humidity sensor, and methods of manufacturing and using the same, are disclosed. The tag or smart label includes a substrate or backplane with a battery or antenna, a humidity sensor, and an integrated circuit thereon. The integrated circuit is in electrical communication with the humidity sensor and the antenna or battery, and is configured to process a signal from the humidity sensor corresponding to the humidity level or value in the environment to be monitored, and provide or generate a signal that represents the humidity level/value. The humidity sensor includes first and second electrodes that are a predetermined distance apart, a humidity-sensitive material having one or more electrical, mechanical or chemical properties that vary as a function of the humidity level/value, and a water- and/or humidity-permeable membrane covering the humidity-sensitive material.

    PRINTING OF CONTACT METAL AND INTERCONNECT METAL VIA SEED PRINTING AND PLATING
    19.
    发明申请
    PRINTING OF CONTACT METAL AND INTERCONNECT METAL VIA SEED PRINTING AND PLATING 有权
    通过种子印刷和镀层印刷接触金属和互连金属

    公开(公告)号:US20090020829A1

    公开(公告)日:2009-01-22

    申请号:US12175450

    申请日:2008-07-17

    Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

    Abstract translation: 公开了使用包含硅化物形成金属的油墨形成触点(和任选的局部互连)的方法,诸如二极管和/或包括这种触点的晶体管的电气器件,(可选的)局部互连)以及用于形成这种器件的方法。 形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上,干燥油墨以形成形成硅化物的金属前体,以及加热形成硅化物的金属前体和硅表面以形成金属硅化物 联系。 任选地,可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上,以形成含金属互连。 此外,一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。 可以使用这种印刷的接触和/或局部互连来制造电子器件,例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连,或者替代地,如果需要用于接触和互连线的不同金属,印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量,并且不一定需要任何蚀刻。

    Wireless Communication Device with Integrated Ferrite Shield and Antenna, and Methods of Manufacturing the Same
    20.
    发明申请
    Wireless Communication Device with Integrated Ferrite Shield and Antenna, and Methods of Manufacturing the Same 有权
    具有集成铁氧体屏蔽和天线的无线通信设备及其制造方法

    公开(公告)号:US20170040665A1

    公开(公告)日:2017-02-09

    申请号:US15230348

    申请日:2016-08-05

    CPC classification number: H01Q1/2291 H01Q7/06

    Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.

    Abstract translation: 公开了一种无线通信装置及其制造和使用方法。 无线通信设备包括其上具有天线和/或电感器的基板,与天线和/或电感器重叠的图案化铁氧体层,以及电连接到天线和/或电感器的电容器。 无线通信设备还可以包括集成电路,其包括被配置为将第一无线信号转换为电信号的接收机和被配置为生成第二无线信号的发射机,所述天线被配置为接收第一无线信号并发送或广播 第二无线信号。 图案化的铁氧体层有利地减轻了金属物体靠近与天线磁耦合的读取器和/或应答器的有害影响。

Patent Agency Ranking