公开(公告)号：US07419839B2

公开(公告)日：2008-09-02

申请号：US10987241

申请日：2004-11-12

申请人： Michael D. Camras ,  William R. Imler ,  Frank S. Wall, Jr ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy

发明人： Michael D. Camras ,  William R. Imler ,  Frank S. Wall, Jr ,  Frank M. Steranka ,  Michael R. Krames ,  Helena Ticha ,  Ladislav Tichy

IPC分类号： H01L21/00

CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

公开(公告)号：US5185288A

公开(公告)日：1993-02-09

申请号：US464275

申请日：1990-01-12

申请人： Louis W. Cook ,  Michael D. Camras

发明人： Louis W. Cook ,  Michael D. Camras

IPC分类号： H01L33/00

CPC分类号： H01L33/0025 ,  H01L33/0062 ,  Y10S148/101 ,  Y10S438/902

摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodiments, the device is either temporarily removed from the LPE reactor or is transferred to another reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat-up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer.

摘要翻译： 通过外延地第一次生长器件层，然后在不透明晶片上的透明衬底层的电极上制造具有透明衬底的电光器件。 随后去除不透明晶片。 器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于升高的温度下不受不利影响。 在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间，装置储存在LPE反应器内。 在其它实施方案中，将该装置暂时从LPE反应器中移出或转移至另一个反应器。 当外延层可氧化时，在生长之间和温度加热期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。

公开(公告)号：US08486725B2

公开(公告)日：2013-07-16

申请号：US13487292

申请日：2012-06-04

申请人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

发明人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

公开(公告)号：US08202742B2

公开(公告)日：2012-06-19

申请号：US13015789

申请日：2011-01-28

申请人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

发明人： Steven Paolini ,  Michael D. Camras ,  Oscar A. Chao Pujol ,  Frank M. Steranka ,  John E. Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

公开(公告)号：US20110132521A1

公开(公告)日：2011-06-09

申请号：US13015789

申请日：2011-01-28

申请人： STEVEN PAOLINI ,  MICHAEL D. CAMRAS ,  OSCAR ARTURO CHAO PUJOL ,  FRANK M. STERANKA ,  JOHN E. EPLER

发明人： STEVEN PAOLINI ,  MICHAEL D. CAMRAS ,  OSCAR ARTURO CHAO PUJOL ,  FRANK M. STERANKA ,  JOHN E. EPLER

IPC分类号： C09K11/00

CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

公开(公告)号：US20110062469A1

公开(公告)日：2011-03-17

申请号：US12561342

申请日：2009-09-17

申请人： Michael D. CAMRAS ,  Nanze Patrick WANG ,  Hendrik J.B. JAGT ,  Helena TICHA ,  Ladislav TICHY

发明人： Michael D. CAMRAS ,  Nanze Patrick WANG ,  Hendrik J.B. JAGT ,  Helena TICHA ,  Ladislav TICHY

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/005 ,  H01L33/46 ,  H01L33/508 ,  H01L33/644 ,  H01L2224/16 ,  H01L2924/12044 ,  H01L2924/00

摘要： A light emitter includes a light-emitting device (LED) die and an optical element over the LED die. The optical element includes a lens, a window element, and a bond at an interface disposed between the lens and the window element. The window element may be a wavelength converting element or an optically flat plate. The window element may be directly bonded or fused to the lens, or the window element may be bonded by one or more intermediate bonding layers to the lens. The bond between the window element and the lens may have a refractive index similar to that of the window element, the lens, or both.

摘要翻译： 发光器包括发光器件（LED）管芯和LED管芯上的光学元件。 光学元件包括透镜，窗口元件和在设置在透镜和窗口元件之间的界面处的接合。 窗口元件可以是波长转换元件或光学平板。 窗口元件可以直接粘合或熔合到透镜，或者窗口元件可以通过一个或多个中间粘合层粘合到透镜。 窗元件和透镜之间的结合可以具有与窗元件，透镜或两者相似的折射率。

公开(公告)号：US07462502B2

公开(公告)日：2008-12-09

申请号：US11444592

申请日：2006-05-31

申请人： Steven Paolini ,  Michael D. Camras ,  Oscar Arturo Chao Pujol ,  Frank M. Steranka ,  John E. Epler

发明人： Steven Paolini ,  Michael D. Camras ,  Oscar Arturo Chao Pujol ,  Frank M. Steranka ,  John E. Epler

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

公开(公告)号：US07279345B2

公开(公告)日：2007-10-09

申请号：US10938237

申请日：2004-09-10

申请人： Michael D. Camras ,  Michael R. Krames ,  Wayne L. Snyder ,  Frank M. Steranka ,  Robert C. Taber ,  John J. Uebbing ,  Douglas W. Pocius ,  Troy A. Trottier ,  Christopher H. Lowery ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Gloria E. Hofler

发明人： Michael D. Camras ,  Michael R. Krames ,  Wayne L. Snyder ,  Frank M. Steranka ,  Robert C. Taber ,  John J. Uebbing ,  Douglas W. Pocius ,  Troy A. Trottier ,  Christopher H. Lowery ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Gloria E. Hofler

IPC分类号： H01L21/00

CPC分类号： H01L33/58 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/502 ,  H01L33/62

摘要： A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.

摘要翻译： 提供了一种将透明光学元件结合到具有包括包括有源区域的半导体层的层叠层的发光器件的方法。 该方法包括升高光学元件和叠层的温度并施加压力以将光学元件和叠层压在一起。 在一个实施例中，该方法还包括在叠层和光学元件之间设置透明粘结材料层。 接合方法可以应用于预制光学元件或稍后形成或成形为诸如透镜或聚光器的光学元件的光学元件材料块。

公开(公告)号：US07276737B2

公开(公告)日：2007-10-02

申请号：US11328964

申请日：2006-01-09

申请人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

发明人： Michael D. Camras ,  Gerard Harbers ,  William R. Imler ,  Matthijs H. Keuper ,  Paul S. Martin ,  Douglas W. Pocius ,  Frank M. Steranka ,  Helena Ticha ,  Ladislav Tichy ,  R. Scott West

IPC分类号： H01L33/00

CPC分类号： H01L33/58 ,  H01L33/44 ,  H01L33/505 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a light emitting semiconductor device bonded to an optical element. In some embodiments, the optical element may be elongated or shaped to direct a portion of light emitted by the active region in a direction substantially perpendicular to a central axis of the semiconductor light emitting device and the optical element. In some embodiments, the semiconductor light emitting device and optical element are positioned in a reflector or adjacent to a light guide. The optical element may be bonded to the first semiconductor light emitting device by a bond at an interface disposed between the optical element and the semiconductor light emitting device. In some embodiments, the bond is substantially free of organic-based adhesives.

摘要翻译： 一种器件包括结合到光学元件的发光半导体器件。 在一些实施例中，光学元件可以是细长的或成形的，以在与半导体发光器件和光学元件的中心轴线基本垂直的方向上引导由有源区域发射的光的一部分。 在一些实施例中，半导体发光器件和光学元件被定位在反射器中或与光导相邻。 光学元件可以通过在设置在光学元件和半导体发光器件之间的界面处的结合键合到第一半导体发光器件。 在一些实施方案中，该键基本上不含有机基粘合剂。

公开(公告)号：US06784463B2

公开(公告)日：2004-08-31

申请号：US10095552

申请日：2002-03-11

申请人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

发明人： Michael D. Camras ,  Daniel A. Steigerwald ,  Frank M. Steranka ,  Michael J. Ludowise ,  Paul S. Martin ,  Michael R. Krames ,  Fred A. Kish ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05684

摘要： A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

摘要翻译： 发光半导体器件包括包括有源区的层叠层。 有源区包括选自III-磷化物，III-砷化物及其合金的半导体。 对于由有源区域发射的光基本透明的覆盖层设置在堆叠的第一侧上。 电耦合以在有源区域施加电压的第一和第二电触点设置在与第一侧相对的堆叠的第二侧上。 在一些实施例中，由有源区域发射的较大部分的光通过第一侧离开堆叠而不是通过第二侧。 因此，例如，发光半导体器件可以有利地作为倒装芯片安装到基座。