Sputtering target
    11.
    发明授权
    Sputtering target 失效
    溅射目标

    公开(公告)号:US5294321A

    公开(公告)日:1994-03-15

    申请号:US974317

    申请日:1993-11-10

    IPC分类号: C04B35/58 C23C14/34

    摘要: A sputtering target formed of a refractory metallic silicide having a composition MSi.sub.x including a mixture composition of an MSi.sub.2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi.sub.2 phase and the Si phase. The value X in the composition formula MSi.sub.x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi.sub.2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

    摘要翻译: 由具有组成为MSix的难熔金属硅化物形成的溅射靶,所述组合物包括颗粒形式的MSi2相的混合组成(M:选自W,Mo,Ti,Zr,Hf, Ni和Ta)和作为基质相的Si相。 在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。 组成式MSix中的值X设定在2.0〜4.0的范围内,形成在MSi2相和Si相之间的界面层的厚度,组成的分散性,靶的密度比,电 Si相的电阻率和表面粗糙度被设定为预定值。 通过使用该目标,可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

    Endoscope
    12.
    发明授权
    Endoscope 有权
    内窥镜

    公开(公告)号:US06689049B1

    公开(公告)日:2004-02-10

    申请号:US09588083

    申请日:2000-06-06

    IPC分类号: A61B100

    摘要: Three magnetic field generating coils on the distal end side of the shape detection probe are provided in the curvable portion, and the first coil at the leading end position is placed at the position corresponding to the leading end curvable piece, whereas the third coil at the position corresponding to the trailing end curvable piece. Further, the second coil is placed at a middle position between the leading end curvable piece and the trailing end curvable piece in the curvable portion. With this structure, the accuracy of detecting the shape of the curvable portion can be improved, and the production cost of the system as a whole can be lowered.

    摘要翻译: 形状检测探针的前端侧的三个磁场产生线圈设置在可弯曲部分中,并且在前端位置处的第一线圈被放置在与前端可弯曲件相对应的位置,而在第三线圈 位置对应于后端可卷曲片。 此外,第二线圈被放置在可弯曲部分中的前端可弯曲件和后端可调节件之间的中间位置。 利用这种结构,可以提高检测可弯曲部分的形状的精度,并且可以降低整个系统的生产成本。

    Sputtering target and method of manufacturing the same
    14.
    发明授权
    Sputtering target and method of manufacturing the same 失效
    溅射靶及其制造方法

    公开(公告)号:US5409517A

    公开(公告)日:1995-04-25

    申请号:US793384

    申请日:1992-03-13

    IPC分类号: C04B35/58 C23C14/34 B22F5/00

    摘要: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

    摘要翻译: PCT No.PCT / JP91 / 00639 Sec。 371日期:1992年3月13日 102(e)1992年3月13日PCT PCT 1991年5月15日提交PCT公布。 出版物WO91 / 18125 日本1991年11月28日。根据本发明,金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相,并且形成Si相的Si晶粒分散在金属硅化物的间隙中 相,以提供高密度溅射靶和低于100ppm的碳的混合结构。 由于目标的高密度和高强度,可以减少溅射时的颗粒的产生,并且由于碳的含量降低,可以防止通过溅射形成的薄膜中的碳的混合。