公开(公告)号：US20170089472A1

公开(公告)日：2017-03-30

申请号：US15230640

申请日：2016-08-08

Applicant: PRESYS.CO.,LTD ,  PSK INC.

Inventor： Bae-Jin KIM ,  Ki Sun CHOI ,  Kang Hyun KIM ,  Sang Min KIM ,  Sun Yeol SEO

IPC: F16K3/18 ,  F16K3/316 ,  F16K3/314 ,  F16K3/02

CPC classification number: F16K3/184 ,  F16K3/0218 ,  F16K3/0281 ,  F16K3/029 ,  F16K3/182 ,  F16K3/314 ,  F16K3/3165 ,  F16K51/02

Abstract: Disclosed herein is an upper housing 100 having openings that are respectively defined in a front surface and a rear surface thereof and in which first and second moving paths 110 and 120 are defined; a first blade 200 installed in the upper housing 100 to move upward from a lower side, thereby opening/closing the first moving path 110; a first shaft 300 coupled to a lower portion of the first blade 200; a lower housing 400 disposed below the upper housing 100, in which a rotation guide groove 410 for guiding rotation of a L-motion block 500 at a fixed position while the first blade 200 moves in a close direction C is defined in each of both inner surfaces of the lower housing (400).

公开(公告)号：US20160020073A1

公开(公告)日：2016-01-21

申请号：US14457619

申请日：2014-08-12

Applicant: PSK INC.

Inventor： Hee Sun CHAE ,  Jeong Hee CHO ,  Jong Sik LEE ,  Han Saem LEE ,  Hyun Jun KIM

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01J37/32422 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/334

Abstract: Provided are a plasma generation device, a method of controlling a characteristic of plasma, and a substrate processing device using the same. The plasma generation device includes a first radio frequency (RF) power supply supplying a first RF signal; a chamber supplying a space in which plasma is generated; a plasma source installed at the chamber, wherein the plasma source receives the first RF signal and generates plasma; a second RF power supply supplying a second RF signal; a direct current (DC) bias power supply supplying a DC bias signal; and an electrode arranged in the chamber, wherein the electrode receives an overlap signal obtained by overlapping the second RF signal and the DC bias signal and controls a characteristic of the plasma.

Abstract translation: 提供了等离子体产生装置，等离子体的特性控制方法和使用该等离子体的基板处理装置。 等离子体产生装置包括提供第一RF信号的第一射频（RF）电源; 提供产生等离子体的空间的室; 安装在所述腔室处的等离子体源，其中所述等离子体源接收所述第一RF信号并产生等离子体; 提供第二RF信号的第二RF电源; 提供DC偏置信号的直流（DC）偏置电源; 以及设置在所述室中的电极，其中所述电极接收通过与所述第二RF信号和所述DC偏置信号重叠而获得的重叠信号，并且控制所述等离子体的特性。

公开(公告)号：US20140377039A1

公开(公告)日：2014-12-25

申请号：US14304368

申请日：2014-06-13

Applicant: PSK INC.

Inventor： Seung-Kook YANG ,  Seong-wook LEE ,  Dae-hee SON

IPC: H01L21/67 ,  F24F9/00 ,  F24F7/00

CPC classification number: F24F9/00 ,  H01L21/67109 ,  H01L21/67201

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes an equipment front end module, a loadlock chamber, a transfer chamber, and a plurality of process chambers. The loadlock chamber includes a cooling unit for cooling a substrate treated in the process chambers, and the cooling unit includes a cooling chamber having an inner space, the cooling chamber having a gas inflow hole in one surface thereof, wherein support pins on which the substrate is placed are disposed around a circumference of the gas injection hole, a cooling gas injection part supplying a cooling gas toward the gas inflow hole, and a gas exhaust part exhausting the cooling gas supplied into the cooling chamber and fumes generated from the substrate to the outside of the cooling chamber.

Abstract translation: 提供了一种基板处理装置。 基板处理装置包括设备前端模块，负载锁定室，传送室和多个处理室。 所述负荷锁定室包括用于冷却在所述处理室中处理的基板的冷却单元，所述冷却单元包括具有内部空间的冷却室，所述冷却室在其一个表面中具有气体流入孔，其中所述基板 放置在气体注入孔的周围，向气体流入孔供给冷却气体的冷却气体注入部，以及排出供给到冷却室的冷却气体的排气部以及从基板产生的烟雾 在冷却室外。

公开(公告)号：US20140320017A1

公开(公告)日：2014-10-30

申请号：US14227449

申请日：2014-03-27

Applicant: PSK INC.

Inventor： Hee Sun CHAE ,  Jeong Hee CHO ,  Jong Sik LEE ,  Han Saem RHEE ,  Hyun Jun KIM

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/3299

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract translation: 提供了一种等离子体产生装置。 等离子体产生装置包括：提供RF信号的RF电源; 等离子体室，其提供注入气体以产生等离子体的空间; 安装在等离子体室的一部分处的第一电磁感应器，并且在施加RF信号时引起等离子体室中的电磁场; 安装在等离子体室的另一部分处的第二电磁感应器，并且在施加RF信号时引起等离子体室中的电磁场; 连接到第一电磁感应器的第一负载; 连接到第二电磁感应器的第二负载; 以及控制器，其通过调整所述第一负载和所述第二负载的至少一个阻抗来控制提供给所述第一电磁感应器和所述第二电磁感应器的功率。

公开(公告)号：US20240087854A1

公开(公告)日：2024-03-14

申请号：US18462378

申请日：2023-09-06

Applicant: PSK INC.

Inventor： KWANG SUNG YOO ,  JONG CHAN LEE

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32348 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/20235 ,  H01J2237/3341

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.

公开(公告)号：US20240087843A1

公开(公告)日：2024-03-14

申请号：US18462385

申请日：2023-09-06

Applicant: PSK INC.

Inventor： JONG CHAN LEE ,  YONG IK OH ,  JI TAE KWON ,  SEONG MIN NAM

IPC: H01J37/244 ,  H01J37/32

CPC classification number: H01J37/244 ,  H01J37/32348 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/3288 ,  H01J2237/24578 ,  H01J2237/3341

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes taking in a substrate to a treating space to mount on a support unit; upwardly moving the support unit after mounting the substrate on the support unit; determining whether the support unit moves normally after the upwardly moving the support unit; and treating the substrate by generating a plasma in the treating space, and wherein at the determining whether the support unit moves normally, before the plasma is generated at the treating space at the treating the substrate, whether a pulse distance matching a predetermined distance data according to a pulse value of a driving unit which pulse-moves a moving body which moves the support unit in a top/down direction, matches a movement distance of the moving body is determined, and an interlock is generated if the pulse distance and the movement distance is different.

公开(公告)号：US20240062998A1

公开(公告)日：2024-02-22

申请号：US18268198

申请日：2021-12-09

Applicant: PSK INC.

Inventor： Jin Woo PARK ,  Hyeong Shin CHO

IPC: H01J37/32

CPC classification number: H01J37/32743 ,  H01J37/32788 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/3244 ,  H01J2237/336 ,  H01J2237/332

Abstract: Disclosed is a method of processing a substrate. The method may include: a substrate loading operation of loading a substrate into a treating space of a chamber; a film removal operation of removing a film provided on the substrate; a protective film formation operation of forming a protective film containing oxygen on the substrate; and a substrate unloading operation of unloading the substrate from the treating space.

公开(公告)号：US20230068224A1

公开(公告)日：2023-03-02

申请号：US17536518

申请日：2021-11-29

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  A Ram KIM ,  Song I HAN

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

公开(公告)号：US11139152B2

公开(公告)日：2021-10-05

申请号：US16597305

申请日：2019-10-09

Applicant: PSK INC.

Inventor： Hung Sheng Wang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: The inventive concept relates to an apparatus for processing a substrate. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.

公开(公告)号：US20210305014A1

公开(公告)日：2021-09-30

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong KIM ,  Tae Hwan YOUN ,  Jong Chan LEE

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.