公开(公告)号：US06767476B2

公开(公告)日：2004-07-27

申请号：US10419659

申请日：2003-04-21

Applicant: Shumin Wang ,  Steven K. Grumbine ,  Christopher C. Streinz ,  Eric W. G. Hoglund

Inventor： Shumin Wang ,  Steven K. Grumbine ,  Christopher C. Streinz ,  Eric W. G. Hoglund

IPC: H01L21302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract translation: 化学机械抛光组合物和包含成膜剂和至少一种硅烷化合物的浆料，其中该组合物可用于抛光衬底特征如铜，钽和氮化钽的特征。

公开(公告)号：US06689692B1

公开(公告)日：2004-02-10

申请号：US08994894

申请日：1997-12-19

Applicant: Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

Inventor： Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

IPC: H01L21302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract translation: 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。

公开(公告)号：US06582623B1

公开(公告)日：2003-06-24

申请号：US09609884

申请日：2000-07-05

Applicant: Steven K. Grumbine ,  Christopher C. Streinz ,  Shumin Wang

Inventor： Steven K. Grumbine ,  Christopher C. Streinz ,  Shumin Wang

IPC: C09K1300

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  H01L21/3212

Abstract: A polishing composition comprising a dispersion of silane modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

Abstract translation: 一种抛光组合物，其包含通过将至少一种具有至少一种表面金属氢氧化物的至少一种表面金属氢氧化物的金属氧化物磨料与至少一种硅烷化合物组合形成的硅烷改性磨料颗粒的分散体和使用抛光组合物 。

公开(公告)号：US06309560B1

公开(公告)日：2001-10-30

申请号：US08944036

申请日：1997-09-29

Applicant: Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

Inventor： Vlasta Brusic Kaufman ,  Rodney C. Kistler ,  Shumin Wang

IPC: H01L21302

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/3212

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract translation: 包含成膜剂，尿素过氧化氢，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料，以及使用化学机械抛光浆料去除含铜合金，钛和氮化钛的方法 层。

公开(公告)号：US06177026B1

公开(公告)日：2001-01-23

申请号：US09084630

申请日：1998-05-26

Applicant: Shumin Wang ,  Brian L. Mueller

Inventor： Shumin Wang ,  Brian L. Mueller

IPC: C09K1300

CPC classification number: B24B37/11 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition comprising an oxidizing agent and at least one solid catalyst, the composition being useful when combined with an abrasive or with an abrasive pad to remove multiple metal layers from a substrate.

Abstract translation: 一种化学机械抛光组合物，其包含氧化剂和至少一种固体催化剂，所述组合物在与研磨剂或研磨垫结合时可用于从基底去除多个金属层。

公开(公告)号：US09890472B2

公开(公告)日：2018-02-13

申请号：US14362130

申请日：2012-04-06

Applicant: Shumin Wang

Inventor： Shumin Wang

IPC: C30B19/12 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B25/06 ,  C30B29/68

CPC classification number: C30B19/12 ,  C30B23/025 ,  C30B25/06 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02667 ,  Y10T428/12681 ,  Y10T428/2495 ,  Y10T428/31678

Abstract: The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.

公开(公告)号：US20150292110A1

公开(公告)日：2015-10-15

申请号：US14396519

申请日：2012-07-03

Applicant: Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

Inventor： Shumin Wang ,  Qian Gong ,  Xiaoming Xie ,  Hailong Wang ,  Zengfeng Di ,  Guqiao Ding ,  Qingbo Liu

IPC: C30B25/10 ,  C01B31/04 ,  C30B29/02

CPC classification number: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188

Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Abstract translation: 本发明属于无机化合物的技术领域，特别涉及通过以CBr4作为源材料并使用分子束外延（MBE）或化学气相沉积（CVD）等方法直接制备石墨烯的方法。 制备石墨烯的方法包括以下步骤：选择合适的材料作为基材; 将催化剂和CBr 4直接沉积在基材的表面上; 对通过沉积获得的样品进行退火处理。 与其他技术相比，本发明方法的创新点是催化剂和CBr4源可以定量和可控地沉积在任何基材上，催化剂和CBr4源在基材表面上反应形成石墨烯，因此 石墨烯生长对衬底材料的依赖性可以在很大程度上降低，并且可以根据不同的应用背景来选择不同的衬底材料。

公开(公告)号：US20150040477A1

公开(公告)日：2015-02-12

申请号：US13960504

申请日：2013-08-06

Applicant: Shumin Wang ,  Zhenyan Xu

Inventor： Shumin Wang ,  Zhenyan Xu

IPC: A01G31/02

CPC classification number: A01G31/02 ,  A01G31/047 ,  A01K63/04 ,  Y02P60/216

Abstract: A device for growing vegetables and plants in aquaponic conditions is disclosed. The device includes a plurality of sheets, each having an inner surface and an outer surface. The plurality of sheets includes a plurality of protruded openings at the outer surface. The plurality of sheets are attached together and then rolled up to form a container like structure for growing plants. The plant seeds are inserted into the plurality of protruded openings. Then water is sprayed inside the container like structure directed away from the center and nutrients are sprayed directly to the roots of the plants. The device provides growth of plants in shorter time and maximum growing area in limited footage.

Abstract translation: 公开了一种用于在水族条件下种植蔬菜和植物的装置。 该装置包括多个片材，每个片材具有内表面和外表面。 多个片材在外表面包括多个突出的开口。 多个片材被连接在一起，然后卷起以形成用于生长植物的容器状结构。 植物种子插入到多个突出的开口中。 然后将水喷射到集装箱内，如同远离中心的结构，营养物质直接喷洒在植物的根部。 该设备在短时间内提供植物生长，并以有限的片段提供最大生长面积。

公开(公告)号：US20090100764A1

公开(公告)日：2009-04-23

申请号：US11920247

申请日：2006-05-12

Applicant: Shumin Wang ,  Chris Chang Yu

Inventor： Shumin Wang ,  Chris Chang Yu

IPC: C09G1/02 ,  C09G1/04

CPC classification number: C09G1/02 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063

Abstract: A composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a chemical portion which includes water and chemical constituents dissolving or softening the photoresist layer and a mechanical portion which is abrasive particles. Using the composition and the method according to the present invention can decrease the conventional two steps of removing a photoresist layer process to one step, thereby simplifying the procedure, shortening the removing time and reducing the cost. The chemical constituents in the composition according to the present invention are of low toxicity and flammability and the amount used is small, which makes it more friendly with the environment and decreases the expense of disposing the waste.

Abstract translation: 公开了一种用于除去光致抗蚀剂层的组合物及其使用方法。 组合物包括化学部分，其包括水和溶解或软化光致抗蚀剂层的化学成分和作为磨料颗粒的机械部分。 使用根据本发明的组合物和方法可以将将光致抗蚀剂层处理去除一个步骤的常规两个步骤减少，从而简化了步骤，缩短了去除时间并降低了成本。 根据本发明的组合物中的化学成分具有低毒性和易燃性，并且所用量小，这使得它对环境更加友好并且降低了废弃物的处理费用。

公开(公告)号：US06840971B2

公开(公告)日：2005-01-11

申请号：US10324634

申请日：2002-12-19

Applicant: Shumin Wang ,  Vlasta Brusic Kaufman

Inventor： Shumin Wang ,  Vlasta Brusic Kaufman

IPC: B24B57/02 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  C23F3/06 ,  H01L21/304 ,  H01L21/321 ,  B24D3/02

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.

Abstract translation: 含有α-氨基酸的化学机械抛光组合物和浆料，其可用于抛光包括多层金属或金属和电介质的基底。