公开(公告)号：US08314027B2

公开(公告)日：2012-11-20

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30 ,  C25D1/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US07884017B2

公开(公告)日：2011-02-08

申请号：US12699518

申请日：2010-02-03

申请人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

发明人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/24 ,  H01L21/40

CPC分类号： H01L21/02074

摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

摘要翻译： 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US20080280456A1

公开(公告)日：2008-11-13

申请号：US11801269

申请日：2007-05-08

申请人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

发明人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC分类号： H01L21/00

CPC分类号： H01L21/02074

摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

摘要翻译： 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US20080254225A1

公开(公告)日：2008-10-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： B05D1/18 ,  B05C13/00

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US20080152823A1

公开(公告)日：2008-06-26

申请号：US11643404

申请日：2006-12-20

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

IPC分类号： B05D1/18

CPC分类号： C23C18/1689 ,  C23C18/161 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1683 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.

摘要翻译： 提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。 该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。 氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。 因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。 边界层的特征在于氧化离子的浓度梯度。 还原剂离子通过边界层的扩散控制氧化还原反应。 可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

公开(公告)号：US20080057182A1

公开(公告)日：2008-03-06

申请号：US11611758

申请日：2006-12-15

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

IPC分类号： B05D5/12 ,  B05D1/36

CPC分类号： H01L21/67207 ,  H01L21/76843 ,  H01L21/76877

摘要： A method for filling a trench of a substrate in a controlled environment is provided. The method initiates with etching a trench in the substrate in a first chamber of a cluster tool. A barrier layer configured to prevent electromigration is deposited over an exposed surface of the trench in a second chamber of the cluster tool and the trench is filled with a gap fill material deposited directly onto the barrier layer in the cluster tool. A semiconductor device fabricated by the method is also provided.

摘要翻译： 提供了一种用于在受控环境中填充衬底的沟槽的方法。 该方法通过在簇工具的第一室中蚀刻衬底中的沟槽来启动。 构造成防止电迁移的阻挡层沉积在簇工具的第二腔中的沟槽的暴露表面上，并且沟槽填充有直接沉积在簇工具中的阻挡层上的间隙填充材料。 还提供了通过该方法制造的半导体器件。

公开(公告)号：US20070292604A1

公开(公告)日：2007-12-20

申请号：US11513634

申请日：2006-08-30

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： B05D3/00 ,  B05D5/12 ,  B05D1/18 ,  C04B41/00 ,  C23C14/00 ,  B05C13/02 ,  B29C71/04

CPC分类号： B05C13/02 ,  B05D3/002 ,  C23C18/1651 ,  C23C18/1851 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862

摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. An exemplary system to practice the exemplary method described above is also provided.

摘要翻译： 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是铜 - 金属界面，从而满足增强电迁移性能，提供较低的金属电阻率以及改善铜互连的金属 - 金属界面粘附的需要， 钴合金界面。 提供了一种制备基板的基板表面的示例性方法，以在集成系统中选择性地在基板的铜互连的铜表面上沉积钴合金材料的薄层，以改善铜互连的电迁移性能。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的示例性系统。

公开(公告)号：US08844461B2

公开(公告)日：2014-09-30

申请号：US11735989

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28 ,  C23C18/16

CPC分类号： C23C18/1628 ,  Y10T137/87652

摘要： A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

摘要翻译： 化学流体处理系统被定义为向混合歧管的多个流体输入提供多个化学品。 化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。 每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。 混合歧管被定义为混合化学品的数量以形成化学镀溶液。 混合歧管包括连接到供应管线的流体输出。 供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

公开(公告)号：US08133812B2

公开(公告)日：2012-03-13

申请号：US12562955

申请日：2009-09-18

申请人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

发明人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： C23C8/02 ,  C23C8/80 ,  C23C10/02 ,  C23C10/60 ,  C23C16/54 ,  C23C16/56 ,  C23C18/1601 ,  C23C18/1632 ,  C23C18/54 ,  C23C26/00 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于制造半导体器件的方法和系统。 本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。 在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。 该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。 本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。 在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。 所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

公开(公告)号：US20120045897A1

公开(公告)日：2012-02-23

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。