公开(公告)号：US20050066918A1

公开(公告)日：2005-03-31

申请号：US10944710

申请日：2004-09-21

申请人： Masahisa Yamakawa ,  Keiji Araki ,  Takayoshi Hayashi ,  Toshiaki Nishimoto

发明人： Masahisa Yamakawa ,  Keiji Araki ,  Takayoshi Hayashi ,  Toshiaki Nishimoto

IPC分类号： F02B75/18 ,  F02B75/20 ,  F02D13/02 ,  F02D41/02 ,  F02D41/30 ,  F02F1/24 ,  F02F1/42 ,  F02M25/07 ,  F01L1/34

CPC分类号： F02D13/0276 ,  F02B75/20 ,  F02B2075/1816 ,  F02D41/0065 ,  F02D41/3064 ,  F02F1/4214 ,  F02F2001/245 ,  F02M26/01 ,  F02M26/40 ,  F02M26/43 ,  Y02T10/18

摘要： A control device switches an engine between normal operation mode and special operation mode. In the normal operation mode, an independent cylinder configuration is formed to produce combustion independently in individual cylinders. In the special operation mode, a two-cylinder interconnect configuration is formed so that burned gas discharged from preceding cylinders currently in an exhaust stroke is introduced into following cylinders currently in an intake stroke through intercylinder gas channels, a lean mixture having a high air-fuel ratio is combusted in the preceding cylinders, and a mixture produced by supplying fuel to the burned gas is combusted in the following cylinders. When the engine is switched between the special operation mode and the normal operation mode, the control device selects transitional operation mode, in which the two-cylinder interconnect configuration is formed, and interrupts combustion in the preceding cylinders while producing combustion in the following cylinders by compression ignition.

摘要翻译： 控制装置在正常操作模式和特殊操作模式之间切换发动机。 在正常操作模式中，形成独立的气缸结构以在各个气缸中独立地产生燃烧。 在特殊操作模式中，形成双缸互连配置，使从当前处于排气行程的先前汽缸排出的燃烧气体通过气缸内气体通道引入目前处于进气冲程的后续汽缸中， 燃料比在先前的气缸中燃烧，并且通过向燃烧气体供应燃料而产生的混合物在随后的气缸中燃烧。 当发动机在特殊操作模式和正常操作模式之间切换时，控制装置选择形成双气缸互连配置的过渡操作模式，并且在随后的气缸中产生燃烧的同时中断前一个气缸中的燃烧， 压缩点火。

公开(公告)号：US06444514B1

公开(公告)日：2002-09-03

申请号：US09677758

申请日：2000-10-03

申请人： Toshiaki Nishimoto ,  Takashi Aoyagi ,  Shogo Kiyota

发明人： Toshiaki Nishimoto ,  Takashi Aoyagi ,  Shogo Kiyota

IPC分类号： H01L218238

CPC分类号： H01L27/11521 ,  G11C16/0416 ,  G11C16/0483 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/115

摘要： In the semiconductor integrated circuit device, an AND-type flash memory is formed on a substrate in which stripe-like element separation regions 5 are formed and active regions L sandwiched between the element separation regions 5 are formed like stripes. A silicon monocrystal substrate containing nitrogen or carbon is used as the semiconductor substrate, to reduce dislocation defects and junction leakages so that the reliability and yield are improved.

摘要翻译： 在半导体集成电路装置中，在形成有条状元件分离区域5的基板上形成有AND型闪速存储器，并且夹持在元件分离区域5之间的​​有源区域L形成为条状。 使用含有氮或碳的硅单晶衬底作为半导体衬底，以减少错位缺陷和结漏电，从而提高可靠性和产率。

公开(公告)号：US5814543A

公开(公告)日：1998-09-29

申请号：US562021

申请日：1995-11-22

申请人： Toshiaki Nishimoto ,  Shoji Shukuri ,  Tsutomu Okazaki ,  Hideo Tobe ,  Kazuhiro Komori ,  Masataka Kato ,  Hitoshi Kume

发明人： Toshiaki Nishimoto ,  Shoji Shukuri ,  Tsutomu Okazaki ,  Hideo Tobe ,  Kazuhiro Komori ,  Masataka Kato ,  Hitoshi Kume

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A method for fabricating a semiconductor integrated circuit device comprising a nonvolatile memory cell, comprises the steps of forming a first gate material which comprises a silicon film containing no impurities, whose top surface is covered with an oxidation-resistant mask, and whose width in the gate-length direction is prescribed, on part of the surface of a first gate insulating film, forming a thermal-oxidation insulating film on the surface of an active region of a semiconductor substrate through thermal oxidation, removing an oxidation-resistant mask, forming a second gate material which comprises a silicon film into which impurities are introduced and whose width in the gate-length direction is prescribed, on each surface of the thermal-oxidation insulating film and the first gate material forming a second gate insulating film on the surface of the second gate material, and forming a third gate material on the surface of the second gate insulating film.

摘要翻译： 一种制造包括非易失性存储单元的半导体集成电路器件的方法，包括以下步骤：形成第一栅极材料，该第一栅极材料包括不含杂质的硅膜，其顶表面被抗氧化掩模覆盖，并且其宽度在 在第一栅极绝缘膜的一部分表面上规定栅极长度方向，通过热氧化在半导体衬底的有源区的表面上形成热氧化绝缘膜，去除抗氧化掩模，形成 第二栅极材料，其包括在所述热氧化绝缘膜和形成第二栅极绝缘膜的表面上的所述热氧化绝缘膜和所述第一栅极材料的表面上引入了杂质并规定了栅极长度方向的宽度的硅膜 第二栅极材料，并在第二栅极绝缘膜的表面上形成第三栅极材料。

公开(公告)号：US4972371A

公开(公告)日：1990-11-20

申请号：US203456

申请日：1988-06-07

申请人： Kazuhiro Komori ,  Takaaki Hagiwara ,  Satoshi Meguro ,  Toshiaki Nishimoto ,  Takeshi Wada ,  Kiyofumi Uchibori ,  Tadashi Muto ,  Hitoshi Kume ,  Hideaki Yamamoto ,  Tetsuo Adachi ,  Toshihisa Tsukada ,  Toshiko Koizumi

发明人： Kazuhiro Komori ,  Takaaki Hagiwara ,  Satoshi Meguro ,  Toshiaki Nishimoto ,  Takeshi Wada ,  Kiyofumi Uchibori ,  Tadashi Muto ,  Hitoshi Kume ,  Hideaki Yamamoto ,  Tetsuo Adachi ,  Toshihisa Tsukada ,  Toshiko Koizumi

IPC分类号： G11C16/04 ,  H01L27/115 ,  H01L29/788

CPC分类号： G11C16/0416 ,  H01L27/115 ,  H01L29/7884

摘要： An EEPROM in which a memory cell is constituted by a floating gate electrode, a control gate electrode, a first semiconductor region provided in a main surface portion of the semiconductor substrate on an end side of the gate electrodes to which the data line is connected, and a second semiconductor region provided in a different main surface portion of the semiconductor substrate on an opposing end side of the gate electrodes to which the grounding line is connected. The drain is used differently depending upon the operations for writing the data, reading the data and erasing the data. The impurity concentration in the first semiconductor region is selected to be lower than that of the second semiconductor region, in order to improve writing and erasing characteristics as well as to increase the reading speed.

摘要翻译： 一种EEPROM，其中存储单元由浮置栅电极，控制栅极电极，设置在半导体衬底的主表面部分中的与数据线连接的栅电极的端侧上的第一半导体区域构成， 以及第二半导体区域，设置在与所述接地线连接的所述栅电极的相对端侧的所述半导体衬底的不同主表面部分中。 漏极的使用方式取决于写入数据的操作，读取数据和擦除数据。 选择第一半导体区域中的杂质浓度低于第二半导体区域的杂质浓度，以提高写入和擦除特性以及增加读取速度。

公开(公告)号：US09328688B2

公开(公告)日：2016-05-03

申请号：US12749388

申请日：2010-03-29

申请人： Mitsuo Hitomi ,  Masahisa Yamakawa ,  Toshiaki Nishimoto ,  Takashi Youso ,  Keiji Araki

发明人： Mitsuo Hitomi ,  Masahisa Yamakawa ,  Toshiaki Nishimoto ,  Takashi Youso ,  Keiji Araki

IPC分类号： F02B3/00 ,  G06F17/00 ,  F02D41/30 ,  F02D41/40

CPC分类号： F02D41/3035 ,  F02D41/402 ,  Y02T10/128 ,  Y02T10/44

摘要： Various systems and methods are disclosed for controlling an internal combustion engine system having an internal combustion engine, a fuel injector which directly injects fuel into a combustion chamber of the internal combustion engine, and a supercharger which supercharges air into the combustion chamber. One example method comprises, injecting fuel into the combustion chamber multiple times so that a first part of the fuel is self ignited and a last part of the fuel being injected during the compression stroke or later in a cylinder cycle when a desired torque of said internal combustion engine system is in a first range; and increasing a pressure of air which the supercharger charges into the combustion chamber as amount of fuel injected into the combustion chamber during a cylinder cycle increases when the desired torque is in the first range.

摘要翻译： 公开了用于控制内燃机系统的各种系统和方法，所述内燃机系统具有内燃机，将燃料直接喷射到内燃机的燃烧室中的燃料喷射器，以及将空气增压到燃烧室中的增压器。 一个示例性方法包括：将燃料多次喷射到燃烧室中，使得燃料的第一部分自燃，并且在压缩行程期间或稍后在汽缸循环中喷射燃料的最后部分，当所述内部的期望扭矩 内燃机系统处于第一范围; 并且当期望的扭矩处于第一范围时，增加在气缸循环期间喷射到燃烧室中的燃料量增加时增压器充入燃烧室的空气压力。

公开(公告)号：US08468823B2

公开(公告)日：2013-06-25

申请号：US12728830

申请日：2010-03-22

申请人： Mitsuo Hitomi ,  Masahisa Yamakawa ,  Takashi Youso ,  Toshiaki Nishimoto ,  Keiji Araki

发明人： Mitsuo Hitomi ,  Masahisa Yamakawa ,  Takashi Youso ,  Toshiaki Nishimoto ,  Keiji Araki

IPC分类号： F02B33/44 ,  F02B33/00 ,  F02D23/00 ,  B60T7/12 ,  G05D1/00 ,  G06F7/00 ,  G06F17/00

CPC分类号： F02D41/3035 ,  F02D41/3041 ,  F02D41/402 ,  Y02T10/128 ,  Y02T10/44

摘要： Disclosed is a supercharged direct-injection engine, which comprises a supercharging device (25, 30) for compressing intake air, and an injector 10 for directly injecting fuel into a combustion chamber 5. In the engine, an excess air factor λ as a ratio of an actual air-fuel ratio to a stoichiometric air-fuel ratio, at least in an engine warmed-up mode, is set to 2 or more in the entire engine-load region. Further, compressed self-ignited combustion is performed in a low engine-load region, and a supercharging amount by the supercharging device (25, 30) is increased along with an increase in engine load in a high engine-load region to allow the excess air factor λ to be kept at 2 or more. The engine of the present invention can effectively reduce NOx emission, while improving fuel economy.

摘要翻译： 公开了一种增压直喷式发动机，其包括用于压缩进气的增压装置（25,30）和用于将燃料直接喷射到燃烧室5中的喷射器10.在发动机中，过量空气因子λ作为比率 至少在发动机预热模式下，实际的空燃比至理论空燃比在整个发动机负载区域中设定为2以上。 此外，在低发动机负载区域中执行压缩自燃燃烧，并且通过增压装置（25,30）的增压量随着高发动机负载区域中的发动机负荷的增加而增加，以允许过量 空气因子λ保持在2以上。 本发明的发动机可以有效地减少NOx排放，同时提高燃油经济性。

公开(公告)号：US20100077990A1

公开(公告)日：2010-04-01

申请号：US12566561

申请日：2009-09-24

申请人： Kouji Shishime ,  Naoya Matsuo ,  Masahisa Yamakawa ,  Tatsuya Fujikawa ,  Takashi Youso ,  Toshiaki Nishimoto ,  Naohiro Yamaguchi ,  Mikinori Ohashi

发明人： Kouji Shishime ,  Naoya Matsuo ,  Masahisa Yamakawa ,  Tatsuya Fujikawa ,  Takashi Youso ,  Toshiaki Nishimoto ,  Naohiro Yamaguchi ,  Mikinori Ohashi

IPC分类号： F02B3/00 ,  F02D41/30

CPC分类号： F02D41/3023 ,  F02D13/0261 ,  F02D41/402 ,  F02P5/152 ,  Y02T10/18 ,  Y02T10/44

摘要： There is provided a method of controlling a spark ignited internal combustion engine having a fuel injector which injects fuel directly into its combustion chamber. The method comprises injecting a total amount of fuel into a combustion chamber by early in a compression stroke during a cylinder cycle at a first engine speed. The method further comprises injecting a first stage of fuel into the combustion chamber during a cylinder cycle by an early in a compression stroke of the cylinder cycle, and injecting a second stage of fuel by late in the compression stroke during the cylinder cycle at a second engine speed less than the first engine speed, after injecting the first stage of fuel. The amount of the second stage fuel is greater than an amount of said first stage fuel. Accordingly, the first and second stage fuels may not be pre-ignited before the spark ignition.

摘要翻译： 提供了一种控制具有燃料喷射器的火花点火内燃机的方法，所述燃料喷射器将燃料直接喷射到其燃烧室中。 该方法包括在第一发动机转速的汽缸循环期间，在压缩行程中早期将总量的燃料喷入燃烧室。 该方法还包括在汽缸循环期间在汽缸循环的早期压缩冲程期间将第一级燃料喷射到燃烧室中，并且在汽缸循环期间在压缩冲程中稍后喷射第二级燃料 发动机转速小于第一发动机转速后，注入第一级燃油。 第二级燃料的量大于所述第一级燃料的量。 因此，第一和第二级燃料在火花点火之前可能不被预先点燃。

公开(公告)号：US07360531B2

公开(公告)日：2008-04-22

申请号：US11520700

申请日：2006-09-14

申请人： Takashi Yohso ,  Masahisa Yamakawa ,  Kouji Shishime ,  Toshiaki Nishimoto

发明人： Takashi Yohso ,  Masahisa Yamakawa ,  Kouji Shishime ,  Toshiaki Nishimoto

IPC分类号： F02B31/00 ,  F02B23/00 ,  F02P15/02

CPC分类号： F02B31/085 ,  F02B23/08 ,  F02B23/101 ,  F02B2023/085 ,  F02B2031/006 ,  Y02T10/125 ,  Y02T10/146

摘要： This invention relates to a combustion chamber structure for a spark-ignition engine, which comprises a combustion chamber defined between a bottom surface of a cylinder head and a top surface of a piston in such a manner that the bottom surface of the cylinder head serves as a ceiling wall thereof, and a spark plug having a sparking end protruding from the ceiling wall into the combustion chamber. In this combustion chamber structure, when the piston is at a top dead center, a principal space of the combustion chamber is comprised of a first combustion space around the sparking end of the spark plug and a second combustion space around a circumference of a cylinder bore. Further, the first combustion space and the second combustion space are communicated with each other through a small interspace zone where an interspace between the ceiling wall and the top surface of the piston is narrowed. The combustion chamber structure makes it possible to increase compression ratio in a practically effective manner.

摘要翻译： 本发明涉及一种用于火花点火发动机的燃烧室结构，该燃烧室结构包括燃烧室，该燃烧室限定在气缸盖的底表面和活塞的顶表面之间，使得气缸盖的底表面用作 其顶壁和火花塞具有从顶壁向燃烧室突出的火花端。 在该燃烧室结构中，当活塞处于上止点时，燃烧室的主要空间由火花塞的火花端周围的第一燃烧空间和围绕气缸孔周围的第二燃烧空间 。 此外，第一燃烧空间和第二燃烧空间通过在顶壁与活塞顶面之间的间隙变窄的小间隙区域彼此连通。 燃烧室结构使得可以以实际有效的方式增加压缩比。

公开(公告)号：US20050090058A1

公开(公告)日：2005-04-28

申请号：US10954102

申请日：2004-09-30

申请人： Tetsuo Adachi ,  Masataka Kato ,  Toshiaki Nishimoto ,  Nozomu Matsuzaki ,  Takashi Kobayashi ,  Yoshimi Sudou ,  Toshiyuki Mine

发明人： Tetsuo Adachi ,  Masataka Kato ,  Toshiaki Nishimoto ,  Nozomu Matsuzaki ,  Takashi Kobayashi ,  Yoshimi Sudou ,  Toshiyuki Mine

IPC分类号： H01M10/0525 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C27/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/283 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/062 ,  H01L31/119 ,  H01M2/16

CPC分类号： H01L21/28273 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/3454 ,  H01L21/28061 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11536 ,  H01L27/11546 ,  H01L29/6659 ,  H01L29/66825 ,  H01L29/7833

摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

公开(公告)号：US06857406B2

公开(公告)日：2005-02-22

申请号：US10668597

申请日：2003-09-24

申请人： Hirokazu Matsuura ,  Kouji Asanomi ,  Toshiaki Nishimoto ,  Taketoshi Yamauchi

发明人： Hirokazu Matsuura ,  Kouji Asanomi ,  Toshiaki Nishimoto ,  Taketoshi Yamauchi

IPC分类号： F01L1/04 ,  F01L1/047 ,  F01L1/053 ,  F01L1/08 ,  F01L1/14 ,  F01L13/00

CPC分类号： F01L1/143 ,  F01L1/047 ,  F01L1/0532 ,  F01L1/08 ,  F01L13/0036 ,  F01L2107/00

摘要： A valve driving device including a tappet assembly adapted to slide in a tappet guide hole to drive a valve and including a high-speed center tappet and low-speed side tappet; and a high-speed center cam and a low-speed side cam provided corresponding to the center tappet and the side tappet. A depression is formed which is depressed from a base circle to roughly the same profile as a shaft section of the camshaft so that the cam portion over a predetermined angle range where a cam nose section is not formed in the centrally located center cam is smaller than the base circles of the outside located side cams in profile.

摘要翻译： 一种阀驱动装置，包括：挺杆组件，其适于在挺杆引导孔中滑动以驱动阀，并且包括高速中心挺杆和低速侧挺杆; 以及与中心挺杆和侧挺杆对应地设置的高速中心凸轮和低速侧凸轮。 形成凹部，其从基部圆弧凹陷到与凸轮轴的轴部分大致相同的轮廓，使得在凸轮前端部分没有形成在中心位置的中心凸轮中的预定角度范围的凸轮部分小于 外侧定位侧的基座凸轮在轮廓中。