公开(公告)号：US09593421B2

公开(公告)日：2017-03-14

申请号：US14514930

申请日：2014-10-15

Applicant: Applied Materials, Inc.

Inventor： Jonghoon Baek ,  Soonam Park ,  Xinglong Chen ,  Dmitry Lubomirsky

IPC: C23C16/50 ,  H05H1/24 ,  C23C16/52 ,  C23C16/503 ,  C23C16/509 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Methods for reducing particle generation in a processing chamber are disclosed. The methods generally include generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma.

Abstract translation: 公开了减少处理室中的颗粒产生的方法。 所述方法通常包括在动力顶部电极和接地底部电极之间产生等离子体，其中顶部电极平行于底部电极，并且在成膜过程中将恒定零直流偏置电压施加到动力顶部电极，以使 电源顶部电极和等离子体之间的电位差和/或接地的底部电极和等离子体之间的电位差。

公开(公告)号：US20160300694A1

公开(公告)日：2016-10-13

申请号：US15187211

申请日：2016-06-20

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  H01L21/67

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Abstract translation: 描述了包括处理室的半导体处理系统。 处理室可以包括盖组件，栅格电极，导电插入件和接地电极。 每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。 每个部件可以通过定位多个绝缘部件而被电隔离。 一个或多个电源可以利用开关机构与处理室电耦合。 开关可以切换以将一个或多个电源电耦合到处理室的组件。

公开(公告)号：US09384997B2

公开(公告)日：2016-07-05

申请号：US14602835

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

公开(公告)号：US08969212B2

公开(公告)日：2015-03-03

申请号：US13834206

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已经被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。