Abstract:
A coil assembly for controlling a magnetic field in a plasma chamber is provided herein. In some embodiments, the coil assembly may include a mandrel including an annular body that includes at least one upper body coolant channel and at least one lower body coolant channel, and a plurality of cooling fins disposed circumferentially about an outer diameter of the body and radially outward from the outer diameter, an inner electromagnetic cosine-theta (cos θ) coil ring including a first set of inner coils wrapped around the plurality of cooling fins in the body and configured to generate a magnetic field in a first direction, an outer electromagnetic cosine-theta (cos θ) coil ring including a second set of outer coils wrapped around the plurality of cooling fins and configured to generate a magnetic field in a second direction orthogonal to the first direction.
Abstract:
Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes.
Abstract:
Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.
Abstract:
Embodiments of process kits for use in substrate processing chambers are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes an annular electrode configured to surround an electrostatic chuck, wherein the annular electrode includes an upper portion bonded to a lower portion and an annular channel disposed at an interface between the upper portion and the lower portion; wherein the annular electrode includes a first channel extending from a lower surface of the lower portion to the annular channel and a second channel extending from the lower surface of the lower portion to the annular channel; wherein the annular electrode is configured to flow a coolant from the first channel to the second channel via the annular channel to cool the annular electrode; and wherein the annular electrode includes at least one of a dielectric coating or a ceramic cap to reduce or prevent arcing between the annular electrode and the electrostatic chuck.
Abstract:
Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.
Abstract:
Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system.
Abstract:
A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.
Abstract:
An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.