公开(公告)号：US20220108886A1

公开(公告)日：2022-04-07

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US11222769B2

公开(公告)日：2022-01-11

申请号：US15858886

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.

公开(公告)号：US11114306B2

公开(公告)日：2021-09-07

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US10916433B2

公开(公告)日：2021-02-09

申请号：US16366539

申请日：2019-03-27

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Maximillian Clemons ,  Mei-Yee Shek ,  Minrui Yu ,  Bencherki Mebarki ,  Mehul B. Naik ,  Chentsau Ying ,  Srinivas D. Nemani

IPC: H01L21/285 ,  H01L21/32 ,  H01L21/768 ,  C23C14/04 ,  C23C14/06 ,  C23C14/35 ,  C23C14/22 ,  C23C14/58 ,  H01L29/45 ,  H01L21/3205 ,  H01L23/532

Abstract: Methods for forming low resistivity metal silicide interconnects using one or a combination of a physical vapor deposition (PVD) process and an anneal process are described herein. In one embodiment, a method of forming a plurality of wire interconnects includes flowing a sputtering gas into a processing volume of a processing chamber, applying a power to a target disposed in the processing volume, forming a plasma in a region proximate to the sputtering surface of the target, and depositing the metal and silicon layer on the surface of the substrate. Herein, the first target comprises a metal silicon alloy and a sputtering surface thereof is angled with respect to a surface of the substrate at between about 10° and about 50°.

公开(公告)号：US20200373200A1

公开(公告)日：2020-11-26

申请号：US16876293

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C.H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC: H01L21/768 ,  H01L23/48

Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US10748783B2

公开(公告)日：2020-08-18

申请号：US16510847

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Adib M. Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas D. Nemani

IPC: H01L21/00 ,  H01L21/447 ,  C23C16/452 ,  H01L21/67

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20200161176A1

公开(公告)日：2020-05-21

申请号：US16197048

申请日：2018-11-20

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.

公开(公告)号：US10429747B2

公开(公告)日：2019-10-01

申请号：US15811341

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Mangesh Bangar ,  Srinivas D. Nemani ,  Steve G. Ghanayem ,  Ellie Y. Yieh

IPC: G03F7/20

Abstract: Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. The processor determines an order of treatment for the substrate based on the overlay error map. The order of treatment includes one or more treatment processes. The processor generates a process recipe for a treatment process of the one or more treatment processes in the order of treatment. The processor provides the process recipe to a substrate treatment apparatus.

公开(公告)号：US10249495B2

公开(公告)日：2019-04-02

申请号：US15195640

申请日：2016-06-28

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Lucy Chen ,  Jie Zhou ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Srinivas D. Nemani ,  Chentsau Ying ,  Jingjing Liu ,  Steven Lane ,  Gonzalo Monroy ,  James D. Carducci

IPC: C23C16/26 ,  H01L21/033 ,  C23C16/505 ,  C23C16/509 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3213 ,  C01B32/25 ,  H01L21/762

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

公开(公告)号：US10233547B2

公开(公告)日：2019-03-19

申请号：US15899234

申请日：2018-02-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  C30B33/12 ,  C23F4/00 ,  H01J37/32

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.