公开(公告)号：US12104243B2

公开(公告)日：2024-10-01

申请号：US17348849

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Jacqueline S. Wrench ,  Feihu Wang ,  Yixiong Yang ,  Joung Joo Lee ,  Srinivas Gandikota ,  Sang-heum Kim ,  Zhebo Chen ,  Gang Shen

IPC: C23C14/02 ,  C23C14/06 ,  C23C14/16 ,  C23C14/58 ,  C23C16/02 ,  C23C16/06 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/0281 ,  C23C14/021 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/16 ,  C23C14/5886 ,  C23C16/0227 ,  C23C16/06 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56

Abstract: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

公开(公告)号：US12096701B2

公开(公告)日：2024-09-17

申请号：US18200388

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01

CPC classification number: H10N60/0241 ,  H10N60/0156

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20230345846A1

公开(公告)日：2023-10-26

申请号：US18177096

申请日：2023-03-01

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/85 ,  H10N60/12

CPC classification number: H10N60/85 ,  H10N60/12 ,  G02B6/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20230329125A1

公开(公告)日：2023-10-12

申请号：US18200388

申请日：2023-05-22

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01

CPC classification number: H10N60/0241 ,  H10N60/0156

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US11739418B2

公开(公告)日：2023-08-29

申请号：US16823182

申请日：2020-03-18

Applicant: Applied Materials, Inc

Inventor： Mingwei Zhu ,  Zihao Yang ,  Nag B. Patibandla ,  Ludovic Godet ,  Yong Cao ,  Daniel Lee Diehl ,  Zhebo Chen

IPC: C23C14/34 ,  C23C14/56 ,  C23C14/06 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/0641 ,  C23C14/34 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J2237/24514

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US20230263075A1

公开(公告)日：2023-08-17

申请号：US17898880

申请日：2022-08-30

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Lan Yu ,  Zhebo Chen ,  Robert Jan Visser ,  Nag Patibandla

IPC: H01L39/24 ,  H01L39/02 ,  G06N10/40

CPC classification number: H01L39/2493 ,  G06N10/40 ,  H01L39/025

Abstract: Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

公开(公告)号：US11600761B2

公开(公告)日：2023-03-07

申请号：US17178187

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H01L39/12 ,  H01L39/22 ,  G02B6/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US20220068709A1

公开(公告)日：2022-03-03

申请号：US17002220

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Feihu Wang ,  Joung Joo Lee ,  Xi Cen ,  Zhibo Yuan ,  Wei Lei ,  Kai Wu ,  Chunming Zhou ,  Zhebo Chen

IPC: H01L21/768 ,  H01L23/532

Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.

公开(公告)号：US11114320B2

公开(公告)日：2021-09-07

申请号：US16690988

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Gaurav Thareja ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Xianmin Tang ,  Sanjay Natarajan ,  Keyvan Kashefizadeh ,  Zhebo Chen ,  Jianxin Lei ,  Shashank Sharma

IPC: H01L21/67 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08 ,  H01L21/285 ,  H01L21/02

Abstract: Embodiments disclosed herein include a processing system and a method of forming a contact. The processing system includes a plurality of process chambers configured to deposit, etch, and/or anneal a source/drain region of a substrate. The method includes depositing a doped semiconductor layer over a source/drain region, forming an anchor layer in a trench, and depositing a conductor in the trench. The method of forming a contact results in reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.

公开(公告)号：US12052935B2

公开(公告)日：2024-07-30

申请号：US17178190

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/01

CPC classification number: H10N60/0241 ,  H10N60/0156

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.