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33 条记录 (耗时 0.028 秒)

    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    11.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 有权

    公开(公告)号：US20210351031A1

    公开(公告)日：2021-11-11

    申请号：US17370263

    申请日：2021-07-08

    申请人： ASM IP HOLDING B.V.

    发明人： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

    摘要： Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    Methods for forming silicon nitride thin films
    14.
    发明授权
    Methods for forming silicon nitride thin films 有权

    公开(公告)号：US10573511B2

    公开(公告)日：2020-02-25

    申请号：US13798285

    申请日：2013-03-13

    申请人： ASM IP HOLDING B.V.

    发明人： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

    IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/34

    摘要： The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    16.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 审中-公开

    公开(公告)号：US20170323776A1

    公开(公告)日：2017-11-09

    申请号：US15581726

    申请日：2017-04-28

    申请人： ASM IP HOLDING B.V.

    发明人： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka

    IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    摘要： Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.