公开(公告)号：US20240043997A1

公开(公告)日：2024-02-08

申请号：US18378403

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  Hak-Yong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US11866823B2

公开(公告)日：2024-01-09

申请号：US17967035

申请日：2022-10-17

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/673 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/458 ,  C23C16/45536 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32211 ,  H01L21/673 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6875 ,  H01L21/68735

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US20230052239A1

公开(公告)日：2023-02-16

申请号：US17967035

申请日：2022-10-17

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US20250092525A1

公开(公告)日：2025-03-20

申请号：US18967876

申请日：2024-12-04

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  G01M3/04 ,  H01L21/67

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20250029829A1

公开(公告)日：2025-01-23

申请号：US18770973

申请日：2024-07-12

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  Sungdae Woo ,  JuSeok Jeon ,  SeungRyul Lee ,  Hyunchul Kim ,  Yujin Kim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32 ,  H01L21/033

Abstract: Provided is a substrate processing method using a PEALD method in which an amorphous TiN film is formed on the substrate. The substrate processing method comprises providing the substrate to a reaction chamber, supplying a first gas to the reaction chamber, supplying a second gas to the reaction chamber, and applying a power to the reaction chamber, wherein a frequency of the power is a variable frequency, wherein the second gas is activated by the power.

公开(公告)号：US20230392278A1

公开(公告)日：2023-12-07

申请号：US18235589

申请日：2023-08-18

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  YongMin Yoo ,  SeungWoo Choi ,  DongSeok Kang ,  JongWon Shon

IPC: C25D11/04 ,  C23C16/44 ,  C25D11/02 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C25D11/022 ,  H01L21/68735 ,  H01L21/6719 ,  C23C16/4583 ,  C23C16/5096 ,  H01J37/3244 ,  C23C16/45525 ,  H01J37/32715 ,  H01L21/68757 ,  C23C16/4412 ,  H01J37/32477

Abstract: A substrate supporting plate that provides improved processing uniformity is disclosed. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. A portion of the peripheral portion may include an insulating layer. A central portion of the top surface may not include the insulating layer.

公开(公告)号：US11345999B2

公开(公告)日：2022-05-31

申请号：US16886405

申请日：2020-05-28

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.