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    Method of forming thin film
    14.
    发明授权
    Method of forming thin film 有权

    公开(公告)号：US10395921B2

    公开(公告)日：2019-08-27

    申请号：US15080004

    申请日：2016-03-24

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Seung Woo Choi ,  Hyung Wook Noh ,  Yong Min Yoo ,  Hak Joo Lee

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/52 ,  C23C16/458

    Abstract: Provided is a method of forming a thin film having a target thickness T on a substrate by an atomic layer deposition (ALD) method. The method includes n processing conditions each having a film growth rate that is different from the others, and determining a1 to an that are cycles of a first processing condition to an n-th processing condition so that a value of |T−(a1×G1+a2×G2+ . . . +an×Gn)| is less than a minimum value among G1, G2, . . . , and Gn, where n is 2 or greater integer, G1, . . . , and Gn respectively denote a first film growth rate that is a film growth rate of the first processing condition, . . . and an n-th film growth rate that is a film growth rate of the n-th processing condition, and the film growth rate denotes a thickness of a film formed per a unit cycle in each of the processing conditions. The film forming method may precisely and uniformly control a thickness of the thin film when an ALD is performed.

    Method of depositing thin film
    17.
    发明授权
    Method of depositing thin film 有权
    沉积薄膜的方法

    公开(公告)号：US09564311B2

    公开(公告)日：2017-02-07

    申请号：US14526811

    申请日：2014-10-29

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Sang Wook Lee

    IPC: H01L21/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/452 ,  C23C16/455

    CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

    Abstract translation: 沉积薄膜的方法包括：首先重复第一气体供应循环，第一气体供应循环包括将源气体供应到反应空间; 供应第一等离子体，同时向反应空间供应反应气体; 重复第二次气体供给循环第二次，第二气体供应循环包括将源气体供应到反应空间; 以及在将所述反应气体供应到所述反应空间的同时供给第二等离子体，其中所述第一等离子体的供给包括供给远程等离子体，所述第二等离子体的供给包括供给直接等离子体

    Method of depositing thin film
    18.
    发明授权
    Method of depositing thin film 有权

    公开(公告)号：US10515795B2

    公开(公告)日：2019-12-24

    申请号：US15396697

    申请日：2017-01-02

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Dae Youn Kim ,  Sang Wook Lee

    IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C23C16/452

    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

    METHOD OF PROCESSING A SUBSTRATE AND A DEVICE MANUFACTURED BY THE SAME
    19.
    发明申请
    METHOD OF PROCESSING A SUBSTRATE AND A DEVICE MANUFACTURED BY THE SAME 审中-公开

    公开(公告)号：US20190148398A1

    公开(公告)日：2019-05-16

    申请号：US16039867

    申请日：2018-07-19

    Applicant: ASM IP Holding B.V.

    Inventor： Young Hoon Kim ,  Jong Wan Choi ,  Jeong Jun Woo ,  Tae Hee Yoo

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/822 ,  H01L21/311

    Abstract: Provided is a substrate processing method capable of preventing over-etching of a part of a stair-case structure due to an etching solution, when a barrier layer is selectively formed on a VNAND device having the stair-case structure. The substrate processing method includes: alternately stacking a first insulating layer and a second insulating layer; forming a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface to the lower surface by etching the first insulating layer and the second insulating layer that are stacked; densifying the stepped structure; forming a barrier layer on the densified second insulating layer; and performing isotropic etching on at least a part of a sacrificial word line structure including the second insulating layer and the barrier layer. During etching the barrier layer at the isotropic etching step, the second insulating layer is not etched or etched a little to an ignorable degree.

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