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公开(公告)号：US10317191B2
公开(公告)日：2019-06-11
申请号：US15432684
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G03F7/20 , G01B11/00 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/95 , H01L21/66 , G01N21/956 , G05B19/418
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US12189302B2
公开(公告)日：2025-01-07
申请号：US17738093
申请日：2022-05-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
IPC: G03F7/07 , G03F7/00 , G06F30/20 , G06N3/02 , G06F119/18 , G06F119/22
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US11977034B2
公开(公告)日：2024-05-07
申请号：US17194558
申请日：2021-03-08
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01B11/14 , G01B11/00 , G01B11/02 , G01B11/26 , G01N21/95 , G01N21/956 , G03F7/00 , G05B19/418 , H01L21/66
CPC classification number: G01N21/9501 , G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , H01L22/20 , G05B2219/37224 , Y02P90/02
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US11347150B2
公开(公告)日：2022-05-31
申请号：US17197167
申请日：2021-03-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Bart Peter Bert Segers , Everhardus Cornelis Mos , Emil Peter Schmitt-Weaver , Yichen Zhang , Petrus Gerardus Van Rhee , Xing Lan Liu , Maria Kilitziraki , Reiner Maria Jungblut , Hyunwoo Yu
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US20210349395A1
公开(公告)日：2021-11-11
申请号：US17379662
申请日：2021-07-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick WARNAAR , Patricius Aloysius Jacobus Tinnemans , Grzegorz Grzela , Everhardus Cornelis Mos , Wim Tjibbo Tel , Marinus Jochemsen , Bart Peter Bert Segers , Frank Staals
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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Patent Agency Ranking
公开(公告)号：US11170072B2
公开(公告)日：2021-11-09
申请号：US15558186
申请日：2016-03-25
Applicant: ASML Netherlands B.V.
Inventor： Everhardus Cornelis Mos , Velislava Ignatova , Erik Jensen , Michael Kubis , Hubertus Johannes Gertrudus Simons , Peter Ten Berge , Erik Johannes Maria Wallerbos , Jochem Sebastiaan Wildenberg
Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.
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公开(公告)号：US20210215622A1
公开(公告)日：2021-07-15
申请号：US17194558
申请日：2021-03-08
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk Elings , Franciscus Bernardus Maria Van Bilsen , Christianus Gerardus Maria De Mol , Everhardus Cornelis Mos , Hoite Pieter Theodoor Tolsma , Peter Ten Berge , Paul Jacques Van Wijnen , Leonardus Henricus Marie Verstappen , Gerald Dicker , Reiner Maria Jungblut , Chung-Hsun Li
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US11061336B2
公开(公告)日：2021-07-13
申请号：US16493835
申请日：2018-03-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Hubertus Johannes Gertrudus Simons , Everhardus Cornelis Mos , Xiuhong Wei , Reza Mahmoodi Baram , Hadi Yagubizade , Yichen Zhang
Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.
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公开(公告)号：US10928737B2
公开(公告)日：2021-02-23
申请号：US16079404
申请日：2017-02-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Everhardus Cornelis Mos , Jochem Sebastiaan Wildenberg , Roy Werkman , Erik Johannes Maria Wallerbos
IPC: G03F7/20
Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.
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公开(公告)号：US20210003927A1
公开(公告)日：2021-01-07
申请号：US17023474
申请日：2020-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Davit Harutyunyan , Fei Jia , Frank Staals , Fuming Wang , Hugo Thomas Looijestijn , Cornelis Johannes Rijnierse , Maxim Pisarenco , Roy Werkman , Thomas Theeuwes , Tom Van Hemert , Vahid Bastani , Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos , Erik Johannes Maria Wallerbos
Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.
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