Abstract:
A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
Abstract:
A laser driven light source comprises laser and focusing optics. These produce a beam of radiation focused on a plasma forming zone within a container containing a gas (e.g., Xe). Collection optics collects photons emitted by a plasma maintained by the laser radiation to form a beam of output radiation. Plasma has an elongate form (L>d) and collecting optics is configured to collect photons emerging in the longitudinal direction from the plasma. The brightness of the plasma is increased compared with sources which collect radiation emerging transversely from the plasma. A metrology apparatus using the light source can achieve greater accuracy and/or throughput as a result of the increased brightness. Back reflectors may be provided. Microwave radiation may be used instead of laser radiation to form the plasma.
Abstract:
An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
Abstract:
An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot.
Abstract:
Disclosed is a method of metrology such as alignment metrology. The method comprises obtaining pupil plane measurement dataset at a pupil plane relating to scattered radiation resultant from a measurement of a structure. The method comprises determining a measurement value or correction therefor using the pupil plane measurement dataset and a sensor term relating to sensor optics used to perform said measurement.
Abstract:
A method of aligning a substrate within an apparatus. The method includes determining a substrate grid based on measurements of a plurality of targets, each at different locations on a substrate. The determining includes repetitions of updating the substrate grid after each measurement of a target, and using the updated grid to align a measurement of a subsequent target.
Abstract:
Disclosed is a metrology device (1600) configured to produce measurement illumination comprising a plurality of illumination beams, each of said illumination beams being spatially incoherent or pseudo-spatially incoherent and comprising multiple pupil points in an illumination pupil of the metrology device. Each pupil point in each one of said plurality of illumination beams has a corresponding pupil point in at least one of the other illumination beams of said plurality of illumination beams thereby defining multiple sets of corresponding pupil points, and the pupil points of each set of corresponding pupil points are spatially coherent with respect to each other.
Abstract:
A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
Abstract:
For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.
Abstract:
For angular resolved spectrometry a radiation beam is used having an illumination profile having four quadrants is used. The first and third quadrants are illuminated whereas the second and fourth quadrants aren't illuminated. The resulting pupil plane is thus also divided into four quadrants with only the zeroth order diffraction pattern appearing in the first and third quadrants and only the first order diffraction pattern appearing in the second and third quadrants.