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11.发明公开公开(公告)号：US20240319620A1
公开(公告)日：2024-09-26
申请号：US18650790
申请日：2024-04-30
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Armand Eugene Albert KOOLEN , Nitesh PANDEY , Vasco Tomas TENNER , Willem Marie Julia Marcel COENE , Patrick WARNAAR
CPC classification number: G03F7/7085 , G01B11/02 , G01B11/0625 , G01N21/4788 , G01N21/9501 , G03F7/70158 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F9/7088 , G01B2210/56
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US20220299751A1
公开(公告)日：2022-09-22
申请号：US17633882
申请日：2020-07-27
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey DEN BOEF , Simon HUISMAN
Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.
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公开(公告)号：US20210357570A1
公开(公告)日：2021-11-18
申请号：US17389682
申请日：2021-07-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Christophe David FOUQUET , Bernardo KASTRUP , Arie Jeffrey DEN BOEF , Johannes Catharinus Hubertus MULKENS , James Benedict KAVANAGH , James Patrick KOONMEN , Neal Patrick CALLAN
IPC: G06F30/398 , H01L21/66 , G03F7/20 , G06F30/20 , G06N7/00
Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.
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公开(公告)号：US20210255553A1
公开(公告)日：2021-08-19
申请号：US17306670
申请日：2021-05-03
Applicant: ASML Netherlands B.V.
Inventor： Zili ZHOU , Nitesh PANDEY , Olger Victor ZWIER , Patrick WARNAAR , Maurits VAN DER SCHAAR , Elliott Gerard MC NAMARA , Arie Jeffrey DEN BOEF , Paul Christiaan HINNEN , Murat BOZKURT , Joost Jeroen OTTENS , Kaustuve BHATTACHARYYA , Michael KUBIS
IPC: G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US20190187573A1
公开(公告)日：2019-06-20
申请号：US16326410
申请日：2017-07-28
Applicant: ASML Netherlands B.V.
Inventor： Hendrikus Herman Marie COX , Paul Corné Henri DE WIT , Arie Jeffrey DEN BOEF , Adrianus Hendrik KOEVOETS , Jim Vincent OVERKAMP , Frits VAN DER MEULEN , Jacobus Cornelis Gerardus VAN DER SANDEN
IPC: G03F7/20
CPC classification number: G03F7/70875 , G03F7/70433 , G03F7/70625 , G03F7/70783
Abstract: A lithographic apparatus comprises a projection system which is configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table. The lithographic apparatus further comprises a heating apparatus comprises one or more radiation sources configured to provide additional radiation beams which illuminate and heat part of the substrate during the exposure.
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Patent Agency Ranking
公开(公告)号：US20190137893A1
公开(公告)日：2019-05-09
申请号：US16181455
申请日：2018-11-06
Applicant: ASML Netherlands B.V.
Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.
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17.发明申请公开(公告)号：US20180373166A1
公开(公告)日：2018-12-27
申请号：US16007112
申请日：2018-06-13
Applicant: ASML Netherlands B.V.
Inventor： Gonzalo Roberto SANGUINETTI , Murat BOZKURT , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF
Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
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公开(公告)号：US20180149987A1
公开(公告)日：2018-05-31
申请号：US15575069
申请日：2016-03-14
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Arie Jeffrey DEN BOEF , Alessandro POLO , Patricius Aloysius Jacobus TINNEMANS , Adrianus Johannes Hendrikus SCHELLEKENS , Elahe YEGANEGI DASTGERDI , Willem Marie Julia Marcel COENE , Erik Willem BOGAART , Simon Reinald HUISMAN
Abstract: An alignment system, method and lithographic apparatus are provided for determining the position of an alignment mark, the alignment system comprising a first system configured to produce two overlapping images of the alignment mark that are rotated by around 180 degrees with respect to one another, and a second system configured to determine the position of the alignment mark from a spatial distribution of an intensity of the two overlapping images.
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公开(公告)号：US20170184981A1
公开(公告)日：2017-06-29
申请号：US15388601
申请日：2016-12-22
Applicant: ASML Netherlands B.V.
Inventor： Richard QUINTANILHA , Arie Jeffrey DEN BOEF
IPC: G03F7/20 , G01N21/956 , G01N21/88 , H05G2/00
CPC classification number: G03F7/70633 , G01N21/8806 , G01N21/956 , G01N2021/95676 , G03F7/70625 , G03F7/7065 , H05G2/008
Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).
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公开(公告)号：US20170031246A1
公开(公告)日：2017-02-02
申请号：US15216998
申请日：2016-07-22
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey DEN BOEF
CPC classification number: G03F7/70133 , G01B11/272 , G01N21/4788 , G01N2201/06113 , G03F7/70625 , G03F7/70633
Abstract: An inspection apparatus is provided for measuring properties of a non-periodic product structure (500′). A radiation source (402) and an image detector (408) provide a spot (S) of radiation on the product structure. The radiation is spatially coherent and has a wavelength less than 50 nm, for example in the range 12-16 nm or 1-2 nm. The image detector is arranged to capture at least one diffraction pattern (606) formed by said radiation after scattering by the product structure. A processor receives the captured pattern and also reference data (612) describing assumed structural features of the product structure. The process uses coherent diffraction imaging (614) to calculate a 3-D image of the structure using the captured diffraction pattern(s) and the reference data. The coherent diffraction imaging may be for example ankylography or ptychography. The calculated image deviates from the nominal structure, and reveals properties such as CD, overlay.
Abstract translation: 提供了用于测量非周期性产品结构（500'）的性质的检查装置。 辐射源（402）和图像检测器（408）在产品结构上提供辐射点（S）。 辐射是空间相干的并且具有小于50nm的波长，例如在12-16nm或1-2nm的范围内。 图像检测器布置成捕获由产品结构散射之后由所述辐射形成的至少一个衍射图案（606）。 处理器接收捕获的图案以及描述产品结构的假定的结构特征的参考数据（612）。 该方法使用相干衍射成像（614）来使用捕获的衍射图案和参考数据来计算结构的3-D图像。 相干衍射成像可以是例如基质照相术或ptychography。 计算的图像偏离标称结构，并显示诸如CD，叠加等属性。
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