公开(公告)号：US09601640B2

公开(公告)日：2017-03-21

申请号：US14468219

申请日：2014-08-25

申请人： Advanced Silicon Group, Inc.

发明人： Marcie R. Black ,  Joanne Forziati ,  Michael Jura ,  Jeff Miller ,  Brian Murphy ,  Adam Standley

IPC分类号： H01L31/0232 ,  H01L31/0236 ,  H01L21/285 ,  H01L31/0224 ,  H01L29/06 ,  H01L29/41 ,  H01L31/0352 ,  H01L21/283 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L21/283 ,  H01L21/28506 ,  H01L29/0676 ,  H01L29/413 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.

公开(公告)号：US20160319441A1

公开(公告)日：2016-11-03

申请号：US15206938

申请日：2016-07-11

申请人： Advanced Silicon Group, Inc.

发明人： Joanne Yim ,  Jeffrey B. Miller ,  Michael Jura ,  Marcie R. Black ,  Joanne Forziati ,  Brian P. Murphy ,  Adam Standley

IPC分类号： C23F1/30 ,  H01M10/0525 ,  H01M4/134 ,  H01L35/10 ,  H01M4/04

CPC分类号： C23F1/30 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02603 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/4885 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/413 ,  H01L35/10 ,  H01L2924/0002 ,  H01M4/0426 ,  H01M4/134 ,  H01M4/386 ,  H01M10/0525 ,  H01M2004/027

摘要： In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.

摘要翻译： 在本公开的一方面，提供了一种方法，包括以下步骤：（a）提供含硅衬底，（b）在衬底上沉积第一金属，（c）使用步骤（b）制备的衬底 第一蚀刻，和（d）使用第二蚀刻蚀刻由步骤（c）制备的衬底，其中所述第二蚀刻比所述第一蚀刻对所沉积的金属更具侵蚀性，其中步骤（d）的结果包括硅纳米线。 该方法还可以包括例如步骤（b1）使第一金属经受使其凝聚的处理和（b2）沉积第二金属。