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11.发明授权Magnetic storage element, production method and driving method therefor, and memory array 失效磁存储元件，其制造方法及其驱动方法以及存储器阵列公开(公告)号：US06954372B2
公开(公告)日：2005-10-11
申请号：US10250811
申请日：2002-01-18
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L27/222 , H01L29/66984
摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.
摘要翻译： 一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。 铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。 在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。 由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。 路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。
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公开(公告)号：US06878979B2
公开(公告)日：2005-04-12
申请号：US10258313
申请日：2002-01-18
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L29/66 , H01L31/119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01F10/3213 , H01F10/3254 , H01F10/3268 , H01L27/222 , H01L29/66984
摘要： A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.
摘要翻译： 可以用电压驱动的自旋开关。 该自旋开关包括：铁磁材料; 与铁磁材料磁耦合的磁半导体; 磁耦合到磁性半导体的反铁磁材料; 和通过绝缘体连接到磁性半导体的电极。 电极的电位变化导致磁性半导体在铁磁性状态和顺磁性状态之间产生可逆的转变。 当磁性半导体变为铁磁性状态时，铁磁材料由于与磁性半导体的磁耦合而在预定方向上被磁化。
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公开(公告)号：US06778427B2
公开(公告)日：2004-08-17
申请号：US10250319
申请日：2003-06-26
IPC分类号： G11C1114
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistve memory device includes a magnetoresistive element and a wiring for applying a magnetic field to the magnetoresistive element. The wiring includes two or more conductive wires that extend in the same direction. A plurality of conductive wires is used to apply a magnetic field to a single magnetoresistive element, thereby achieving high-speed response and suppressing crosstalk.
摘要翻译： 磁阻存储器件包括磁阻元件和用于向磁阻元件施加磁场的布线。 布线包括沿相同方向延伸的两根或多根导线。 使用多根导线将磁场施加到单个磁阻元件，从而实现高速响应并抑制串扰。
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14.发明授权Magnetic control device, and magnetic component and memory apparatus using the same 失效磁控装置及使用其的磁性部件及存储装置公开(公告)号：US06590268B2
公开(公告)日：2003-07-08
申请号：US09803571
申请日：2001-03-09
IPC分类号： H01L4300
CPC分类号： G11C11/16
摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.
摘要翻译： 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。
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15.发明申请Magnetic head and apparatus for recording/reproducing magnetic information using the same 失效用于使用其磁记录/再现磁信息的磁头和装置公开(公告)号：US20050174700A1
公开(公告)日：2005-08-11
申请号：US10896795
申请日：2004-07-22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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16.发明授权Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell 有权磁阻效应元件，磁阻效应存储单元，MRAM以及用于执行从磁阻效应存储单元写入或读取的信息的方法公开(公告)号：US06436526B1
公开(公告)日：2002-08-20
申请号：US09596116
申请日：2000-06-16
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
摘要翻译： 磁阻效应元件包括第一铁磁膜; 第二铁磁膜; 以及介于所述第一铁磁膜和所述第二铁磁性膜之间的第一非磁性膜。 第一铁磁膜的磁化比通过外部磁场的第二铁磁性膜的磁化更容易旋转。 第一铁磁膜具有约2nm或更小的有效磁性厚度。
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公开(公告)号：US20140154510A1
公开(公告)日：2014-06-05
申请号：US14131197
申请日：2012-07-04
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y40/00 , C23C14/06 , C23C14/0694 , C23C14/081 , C23C14/3407 , C23C14/352 , H01L21/02175 , H01L21/02266 , H01L43/08 , Y10T428/30
摘要： A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride.
摘要翻译： 本发明的膜结构（碳材料绝缘膜结构）包括碳材料和设置在碳材料上并由含氟氧化镁构成的绝缘膜。 氧化镁中的氟的添加量为0.0049原子％以上且0.1508原子％以下。 该薄膜结构有助于实现诸如石墨烯之类的碳材料的诸如旋转装置的电子装置。 该膜结构例如通过使用含有氧化镁和氟化镁的靶进行溅射而形成。
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公开(公告)号：US07018725B2
公开(公告)日：2006-03-28
申请号：US10034895
申请日：2001-12-28
IPC分类号： B32B5/66
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
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19.发明授权Magnetoresistance element and magnetoresistance storage element and magnetic memory 失效磁电阻元件和磁阻存储元件和磁存储器公开(公告)号：US07005691B2
公开(公告)日：2006-02-28
申请号：US10470670
申请日：2002-06-04
IPC分类号： H01L31/119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , G11C11/16 , H01F10/324 , H01F10/3254 , H01L43/08 , Y10S257/903 , Y10S257/904
摘要： A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.
摘要翻译： 一种磁电阻元件，其中第一导电体形成为几乎接触与第一铁磁层的非磁性层相对的表面的中心，所述第一铁磁层的形成为与第二铁磁层一起夹在中间，非磁性层 层和形成为至少覆盖第一铁磁层的侧表面的绝缘体，并且非磁性层形成为覆盖第一铁磁层的表面的周边边缘，由此可以防止 漏电流从第一导电体沿着第一铁磁层，非磁性层和第二铁磁层的侧面流向第二导电体，并且使从第一导电体流出的偏置电流均匀 第二导体，从而限制诸如MR值和结电阻的磁阻特性的变化。
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20.发明授权公开(公告)号：US06785100B2
公开(公告)日：2004-08-31
申请号：US09829400
申请日：2001-04-09
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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