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公开(公告)号：US20140154510A1
公开(公告)日：2014-06-05
申请号：US14131197
申请日：2012-07-04
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y40/00 , C23C14/06 , C23C14/0694 , C23C14/081 , C23C14/3407 , C23C14/352 , H01L21/02175 , H01L21/02266 , H01L43/08 , Y10T428/30
摘要： A film structure (carbon material-insulating film structure) of the present invention includes a carbon material and an insulating film disposed on the carbon material and composed of fluorine-added magnesium oxide. The amount of added fluorine in the magnesium oxide is 0.0049 atomic percent or more and 0.1508 atomic percent or less. This film structure facilitates the realization of an electronic device, such as a spin device, which uses a carbon material such as graphene. This film structure is formed, for example, by sputtering using a target containing magnesium oxide and magnesium fluoride.
摘要翻译： 本发明的膜结构（碳材料绝缘膜结构）包括碳材料和设置在碳材料上并由含氟氧化镁构成的绝缘膜。 氧化镁中的氟的添加量为0.0049原子％以上且0.1508原子％以下。 该薄膜结构有助于实现诸如石墨烯之类的碳材料的诸如旋转装置的电子装置。 该膜结构例如通过使用含有氧化镁和氟化镁的靶进行溅射而形成。
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公开(公告)号：US08330241B2
公开(公告)日：2012-12-11
申请号：US13454696
申请日：2012-04-24
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L43/10
摘要： The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.
摘要翻译： 本发明的磁性隧道结装置包括第一铁磁层，第二铁磁层，形成在第一铁磁层和第二铁磁层之间的绝缘层。 绝缘层由添加氟的MgO构成。 绝缘层中的氟含量为0.00487at。 ％以上0.15080。 ％ 或更少。 该器件虽然包括MgO绝缘层，但是对于包括MgO绝缘层的常规器件，具有优异的磁阻性能。 氟含量优选为0.00487at。 ％以上0.05256。 ％ 或更少。
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3.发明授权Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same 失效磁阻元件及其制造方法以及使用该磁阻元件的磁头，磁存储器和磁记录装置公开(公告)号：US06943041B2
公开(公告)日：2005-09-13
申请号：US10719412
申请日：2003-11-21
IPC分类号： G01R33/09 , G11B5/39 , G11C11/16 , H01F10/32 , H01F41/30 , H01L27/22 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L43/08 , H01L43/12
摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.
摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。
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公开(公告)号：US06778427B2
公开(公告)日：2004-08-17
申请号：US10250319
申请日：2003-06-26
IPC分类号： G11C1114
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetoresistve memory device includes a magnetoresistive element and a wiring for applying a magnetic field to the magnetoresistive element. The wiring includes two or more conductive wires that extend in the same direction. A plurality of conductive wires is used to apply a magnetic field to a single magnetoresistive element, thereby achieving high-speed response and suppressing crosstalk.
摘要翻译： 磁阻存储器件包括磁阻元件和用于向磁阻元件施加磁场的布线。 布线包括沿相同方向延伸的两根或多根导线。 使用多根导线将磁场施加到单个磁阻元件，从而实现高速响应并抑制串扰。
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5.发明授权Magnetic control device, and magnetic component and memory apparatus using the same 失效磁控装置及使用其的磁性部件及存储装置公开(公告)号：US06590268B2
公开(公告)日：2003-07-08
申请号：US09803571
申请日：2001-03-09
IPC分类号： H01L4300
CPC分类号： G11C11/16
摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.
摘要翻译： 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。
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6.发明申请Magnetic head and apparatus for recording/reproducing magnetic information using the same 失效用于使用其磁记录/再现磁信息的磁头和装置公开(公告)号：US20050174700A1
公开(公告)日：2005-08-11
申请号：US10896795
申请日：2004-07-22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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7.发明授权公开(公告)号：US06917492B2
公开(公告)日：2005-07-12
申请号：US10611224
申请日：2003-06-27
申请人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
发明人： Nozomu Matsukawa , Masayoshi Hiramoto , Akihiro Odagawa , Yasunari Sugita , Mitsuo Satomi , Yoshio Kawashima
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F41/307 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T29/49034
摘要： A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100-zRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy a+b+c=100, a≧30, x+y=100, 0
摘要翻译： 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 铁磁层中的至少一个具有由（M×××××××××××××××××××××××××××composition composition z SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB >在与非磁性层的界面处。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是Fe L是选自Pt，Pd，Ir和Rh中的至少一种元素，R是具有较低自由能以与非金属元素形成化合物的元素， 磁性层是选自B，C，N，O和P中的至少一种，除了组合物中包含的任何其它元素为M或L，以及a，b，c，x，y和 z满足a + b + c = 100，a> = 30，x + y = 100,0
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公开(公告)号：US06708390B2
公开(公告)日：2004-03-23
申请号：US10421989
申请日：2003-04-23
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400° C. to 450° C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330° C. to 380° C. for not less than 60 minutes; and a heat treatment process at 400° C. to 450° C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译： 本发明提供即使在高温热处理后，特别是在400℃〜450℃也能够抑制特性劣化的磁阻元件。该元件通过以下顺序制造方法：以下述方式制造：a 用于在基板上形成至少第一铁磁层，第二铁磁层和非磁性层的成膜工艺; 在330℃至380℃下预热不少于60分钟; 以及在400℃至450℃的热处理过程。该元件具有随着由第一铁磁层和第二铁磁层的磁化方向形成的相对角度的变化而变化的电阻值。
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9.发明授权Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell 有权磁阻效应元件，磁阻效应存储单元，MRAM以及用于执行从磁阻效应存储单元写入或读取的信息的方法公开(公告)号：US06436526B1
公开(公告)日：2002-08-20
申请号：US09596116
申请日：2000-06-16
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
摘要翻译： 磁阻效应元件包括第一铁磁膜; 第二铁磁膜; 以及介于所述第一铁磁膜和所述第二铁磁性膜之间的第一非磁性膜。 第一铁磁膜的磁化比通过外部磁场的第二铁磁性膜的磁化更容易旋转。 第一铁磁膜具有约2nm或更小的有效磁性厚度。
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公开(公告)号：US07018725B2
公开(公告)日：2006-03-28
申请号：US10034895
申请日：2001-12-28
IPC分类号： B32B5/66
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
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