公开(公告)号：US20090159006A1

公开(公告)日：2009-06-25

申请号：US12299936

申请日：2007-04-27

申请人： Takakazu Yamada ,  Osamu Irino ,  Tsuyoshi Kagami

发明人： Takakazu Yamada ,  Osamu Irino ,  Tsuyoshi Kagami

IPC分类号： C23C16/44

CPC分类号： C23C16/44 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/52

摘要： Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized.

摘要翻译： 提供一种通过采用公共部件能够降低成本并提高沉积效率的薄膜制造装置。 在根据本发明的薄膜制造装置中，通过利用设置在真空容器内部的内块来确定反应空间的体积来优化反应空间的体积，即通过仅改变内径的尺寸 的内部块，而不改变真空罐的尺寸。 因此，使用共同的真空槽可以在具有不同尺寸的多种基板上形成膜。 此外，可以将要处理的基板的每个尺寸准备的装置结构部件的数量的增加最小化，从而可以降低部件的成本，并且在简化组装操作，产品检查操作和调整操作的同时 可以实现优异的沉积效率和稳定的成膜。

公开(公告)号：US20050211168A1

公开(公告)日：2005-09-29

申请号：US11132173

申请日：2005-05-19

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J10/02 ,  B01J19/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

公开(公告)号：US08118935B2

公开(公告)日：2012-02-21

申请号：US11132173

申请日：2005-05-19

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。

公开(公告)号：US07618493B2

公开(公告)日：2009-11-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US20070054472A1

公开(公告)日：2007-03-08

申请号：US10569470

申请日：2004-08-25

申请人： Yutaka Nishioka ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Takeshi Masuda ,  Masaki Uematsu ,  Koukou Suu

发明人： Yutaka Nishioka ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Takeshi Masuda ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： H01L21/02271 ,  C23C16/409 ,  C23C16/4482 ,  C23C16/452 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/3165

摘要： An oxide thin film having good characteristic properties is prepared by reducing an occurrence of an oxygen defect of the resulting oxide thin film and promoting the epitaxial growth of the film. The oxide thin film is prepared by admixing a raw gas, a carrier gas and an oxidation gas and supplying the resulting gas mixture on a heated substrate placed in a reaction chamber from a shower plate through a gas activating means which is maintained, by a heating means, at such a temperature that any liquefaction, deposition and film-formation of a raw material are never caused, to thus make the oxidation gas react with one another and to prepare the oxide thin film on the substrate. In this case, a rate of the oxidation gas flow rate is not less than 60% on the basis of the gas mixture. Furthermore, a flow rate of oxidation gas used for forming an initial layer by nucleation is less than 60%, and a flow rate of oxidation gas used in a subsequent film-forming process for forming a second layer is not less than 60%. Furthermore, in an apparatus for preparing the oxide thin film, a heating means is arranged between a gas-mixing unit and a shower plate.

摘要翻译： 通过减少所得氧化物薄膜的氧缺陷的发生并促进膜的外延生长，制备具有良好特性的氧化物薄膜。 氧化物薄膜是通过混合原料气体，载气和氧化气体制备的，并将得到的气体混合物通过气体激活装置从放置在喷淋板的反应室中的加热基材上提供，气体活化装置通过加热 意味着在不会引起原料的任何液化，沉积和成膜的温度下，从而使氧化气体彼此反应并在基底上制备氧化物薄膜。 在这种情况下，基于气体混合物，氧化气体流量的比率不小于60％。 此外，用于通过成核形成初始层的氧化气体的流量小于60％，并且在随后的用于形成第二层的成膜工艺中使用的氧化气体的流量不小于60％。 此外，在用于制备氧化物薄膜的装置中，在气体混合单元和淋浴板之间设置加热装置。

公开(公告)号：US08747555B2

公开(公告)日：2014-06-10

申请号：US12299936

申请日：2007-04-27

申请人： Takakazu Yamada ,  Osamu Irino ,  Tsuyoshi Kagami

发明人： Takakazu Yamada ,  Osamu Irino ,  Tsuyoshi Kagami

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/44 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/52

摘要： Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized.

摘要翻译： 提供一种通过采用公共部件能够降低成本并提高沉积效率的薄膜制造装置。 在根据本发明的薄膜制造装置中，通过利用设置在真空容器内部的内块来确定反应空间的体积来优化反应空间的体积，即通过仅改变内径的尺寸 的内部块，而不改变真空罐的尺寸。 因此，使用共同的真空槽可以在具有不同尺寸的多种基板上形成膜。 此外，可以将要处理的基板的每个尺寸准备的装置结构部件的数量的增加最小化，从而可以降低部件的成本，并且在简化组装操作，产品检查操作和调整操作的同时 可以实现优异的沉积效率和稳定的成膜。

公开(公告)号：US08591655B2

公开(公告)日：2013-11-26

申请号：US10612149

申请日：2003-07-03

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/409 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45589 ,  C30B25/02 ,  C30B25/14 ,  C30B29/60

摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

摘要翻译： 用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的气体供应口24a。该端口是 布置在气体混合室的底面的周边部分，使得气体混合物从头部的上周边区域朝向其中心流动。 将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气 通过排气口。 舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

公开(公告)号：US06933010B2

公开(公告)日：2005-08-23

申请号：US10466324

申请日：2002-12-03

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： B01F3/02 ,  B01F5/02 ,  B01J4/00 ,  B01J10/02 ,  B01J19/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45502 ,  B01F3/02 ,  B01F5/0256 ,  B01F2215/0427 ,  B01J4/001 ,  B01J10/02 ,  B01J19/247 ,  C23C16/4412 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/4558 ,  C23C16/4585 ,  H01L21/67017

摘要： A thin film manufacturing system, wherein a stage for placing a substrate thereon is disposed within a vacuum reactor and a gas head for supplying a film forming gas to a central area on a top face of the vacuum reactor is arranged so that the gas head is opposed to the stage. A cylindrical sleeve member is disposed and comes in close contact with a side wall of the stage to surround a periphery of the stage. The height of the stage can be established at the position where the volume of a second space formed below the stage and connected to a vacuum discharge means is larger than that of a first space formed above the stage, in such a manner that an exhaust gas is isotropically discharged from the first space without causing any convection current therein through the interstice between the sleeve member and an inner wall surface constituting the reactor.

摘要翻译： 一种薄膜制造系统，其中用于将基板放置在其上的载物台设置在真空反应器内，并且将用于将成膜气体供应到真空反应器的顶面上的中心区域的气体头设置为使得气体头 反对舞台。 圆柱形套筒构件设置成与舞台的侧壁紧密接触以围绕舞台的周边。 该台架的高度可以在形成在载物台下方并连接到真空排出装置的第二空间的体积大于形成在载物台上方的第一空间的体积的位置上， 从第一空间各向同性地排出，而不会通过套筒构件和构成反应器的内壁面之间的间隙引起任何对流。