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    Printer control device for controlling concurrently input print data, and printer apparatus with a printer control device
    12.
    发明授权
    Printer control device for controlling concurrently input print data, and printer apparatus with a printer control device 有权
    用于同时输入打印数据的打印机控制装置，以及具有打印机控制装置的打印机装置

    公开(公告)号：US08400662B2

    公开(公告)日：2013-03-19

    申请号：US12857311

    申请日：2010-08-16

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： G06F15/00 ,  G06K1/00

    CPC分类号： G06K15/1817 ,  G06F3/1213 ,  G06F3/122 ,  G06F3/124 ,  G06F3/126 ,  G06F3/1267 ,  G06F3/1275 ,  G06F3/1285 ,  G06K15/02

    摘要： A printer apparatus is provided which receives concurrent input print data from plural input ports without increasing receiving buffer memory. A controller determines whether an image creator is used by other jobs when starting receiving print data through any one of the plural input ports. When not used, print data related to the current job is stored in a receiving buffer memory and at the same time print data stored in the buffer memory is printed via the image creator. On the other hand, when other jobs use the image creator, the print data related to the current job is stored in a hard disk unit and is printed when the image creating device becomes available.

    摘要翻译： 提供一种打印机装置，其从多个输入端口接收同时输入的打印数据，而不增加接收缓冲存储器。 当通过多个输入端口中的任何一个开始接收打印数据时，控制器确定其他作业是否使用图像创建器。 当不使用时，与当前作业相关的打印数据存储在接收缓冲存储器中，并且通过图像创建者打印存储在缓冲存储器中的打印数据。 另一方面，当其他作业使用图像创建者时，与当前作业相关的打印数据被存储在硬盘单元中，并且当图像创建装置可用时被打印。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    13.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20130020584A1

    公开(公告)日：2013-01-24

    申请号：US13639199

    申请日：2010-04-22

    申请人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Akira Inoue

    发明人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Akira Inoue

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7787 ,  H01L29/0657 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316

    摘要： In the present invention, provided is a semiconductor device, including: a GaN channel layer which is provided on a substrate and through which electrons run; a barrier layer which is provided on the GaN channel layer and which contains at least one of In, Al, and Ga and contains N; a gate electrode which is provided on the barrier layer; and a source electrode and a drain electrode which are provided on the substrate across the gate electrode, in which, in a portion of the barrier layer between the gate electrode and the drain electrode, a magnitude of polarization of the barrier layer is smaller on the gate electrode side than on the drain electrode side. Thus, PAE can be improved by reducing Rd and Cgd simultaneously.

    摘要翻译： 在本发明中，提供了一种半导体器件，包括：GaN沟道层，其设置在基板上，电子通过该沟道层运行; 阻挡层，其设置在所述GaN沟道层上并且包含In，Al和Ga中的至少一个并且包含N; 设置在所述阻挡层上的栅电极; 以及源极电极和漏电极，其设置在跨越栅电极的基板上，其中在栅电极和漏电极之间的阻挡层的一部分中，阻挡层的极化大小在 栅电极侧比漏极侧。 因此，通过同时减少Rd和Cgd可以改善PAE。

    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
    15.
    发明申请
    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20120112319A1

    公开(公告)日：2012-05-10

    申请号：US13382674

    申请日：2010-07-01

    申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

    发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

    IPC分类号： H01L29/36 ,  H01L21/20

    CPC分类号： H01L21/3221 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

    摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

    摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
    16.
    发明申请
    EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME 有权
    外延硅晶片及其制造方法

    公开(公告)号：US20120112190A1

    公开(公告)日：2012-05-10

    申请号：US13378562

    申请日：2010-05-28

    申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

    发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

    IPC分类号： H01L29/04 ,  H01L21/20

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3221

    摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

    摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。 之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

    TEMPO DETECTION DEVICE, TEMPO DETECTION METHOD AND PROGRAM
    17.
    发明申请
    TEMPO DETECTION DEVICE, TEMPO DETECTION METHOD AND PROGRAM 失效
    TEMPO检测装置，温度检测方法和程序

    公开(公告)号：US20120024130A1

    公开(公告)日：2012-02-02

    申请号：US13190731

    申请日：2011-07-26

    申请人： Shusuke TAKAHASHI ,  Akira Inoue

    发明人： Shusuke TAKAHASHI ,  Akira Inoue

    IPC分类号： G10H1/40

    CPC分类号： G10H1/40 ,  G10H1/0008 ,  G10H2210/076 ,  G10H2220/086 ,  G10H2250/031 ,  G10H2250/235

    摘要： A tempo detection device includes: a basic feature amount extracting section which extracts a plurality of types of basic feature amounts from an input audio signal; a weighting and adding section which weights and adds the basic feature amounts of the plurality of types extracted in the basic feature amount extracting section to obtain an addition signal; and a tempo detecting section which detects BPM indicating the tempo on the basis of a periodic component included in the addition signal obtained in the weighting and adding section.

    摘要翻译： 速度检测装置包括：基本特征量提取部，其从输入音频信号中提取多种类型的基本特征量; 加权和加法部分，其加权并添加在基本特征量提取部分中提取的多个类型的基本特征量，以获得加法信号; 以及速度检测部分，其基于在加权和加法部分中获得的加法信号中包括的周期分量来检测指示速度的BPM。

    Image recognition system and recognition method thereof and program
    20.
    发明授权
    Image recognition system and recognition method thereof and program 有权
    图像识别系统及其识别方法及程序

    公开(公告)号：US08027522B2

    公开(公告)日：2011-09-27

    申请号：US12409623

    申请日：2009-03-24

    申请人： Akira Inoue

    发明人： Akira Inoue

    IPC分类号： G06K9/00

    CPC分类号： G06K9/4647 ,  G06K9/00221 ,  G06K9/6232

    摘要： A task is to correctly classify an input image regardless of a fluctuation in illumination and a state of occlusion of the input image.Input image sub-region extraction means 2 extracts a sub-region of the input image. Inter-pattern distance calculation means 3 calculates an inter-pattern distance between this sub-region and a sub-region of a registration image pre-filed in dictionary filing means 5 for each sub-region. Region distance value integration means 10 integrates the inter-pattern distances obtained for each sub-region. This is conducted for the registration image of each category. Identification means 4 finds a minimum value out of its integrated inter-pattern distances, and in the event that its minimum value is smaller than a threshold, outputs a category having its minimum distance as a recognition result.

    摘要翻译： 任务是对输入图像进行正确分类，而不管照明的波动和输入图像的遮挡状态如何。 输入图像子区域提取装置2提取输入图像的子区域。 图案间距离计算装置3计算该子区域与每个子区域在字典归档装置5中预先记录的登记图像的子区域之间的图案间距离。 区域距离值积分装置10对每个子区域获得的图案间距进行积分。 这是针对每个类别的注册图像进行的。 识别装置4从其集成的图案间距离中找到最小值，并且在其最小值小于阈值的情况下，输出具有其最小距离的类别作为识别结果。