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公开(公告)号：US20160118226A1
公开(公告)日：2016-04-28
申请号：US14986070
申请日：2015-12-31
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
CPC classification number: H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
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公开(公告)号：US11056372B2
公开(公告)日：2021-07-06
申请号：US16447518
申请日：2019-06-20
Applicant: Applied Materials, Inc.
Inventor： Brian T. West , Soundarrajan Jembulingam , Dinkesh Huderi Somanna
IPC: H01L21/683 , H01L21/67 , H02H7/20
Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.
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公开(公告)号：US10930479B2
公开(公告)日：2021-02-23
申请号：US16203353
申请日：2018-11-28
Applicant: Applied Materials, Inc.
Inventor： Simon Nicholas Binns , Brian T. West , Ronald Vern Schauer , Roger M. Johnson , Michael S. Cox
Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.
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公开(公告)号：US10781518B2
公开(公告)日：2020-09-22
申请号：US14567161
申请日：2014-12-11
Applicant: Applied Materials, Inc.
Inventor： Brian T. West , Manoj A. Gajendra , Soundarrajan Jembulingam
IPC: H01L21/67 , C23C16/46 , H01L21/683 , C23C16/458 , C23C14/50 , H01J37/32
Abstract: Embodiments of the disclosure include an electrostatic chuck assembly, a processing chamber and a method of maintaining a temperature of a substrate is provided. In one embodiment, an electrostatic chuck assembly is provided that includes an electrostatic chuck, a cooling plate and a gas box. The cooling plate includes a gas channel formed therein. The gas box is operable to control a flow of cooling gas through the gas channel.
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公开(公告)号：US10714321B2
公开(公告)日：2020-07-14
申请号：US16048919
申请日：2018-07-30
Applicant: Applied Materials, Inc.
Inventor： Brian T. West , Michael S. Cox , Jeonghoon Oh
Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
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Patent Agency Ranking
公开(公告)号：US10176973B2
公开(公告)日：2019-01-08
申请号：US15411711
申请日：2017-01-20
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.
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公开(公告)号：US09552967B2
公开(公告)日：2017-01-24
申请号：US14995187
申请日：2016-01-13
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
IPC: H01L21/465 , H01J37/32 , B01D53/32
CPC classification number: H01J37/32844 , B01D53/323 , B01D2257/55 , B01D2257/553 , B01D2257/556 , B01D2258/0216 , H01J37/32082 , H01J37/32357 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32669 , H01J37/32825 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/02123 , H01L21/02274 , Y02C20/30
Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
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公开(公告)号：US09230780B2
公开(公告)日：2016-01-05
申请号：US14199974
申请日：2014-03-06
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
CPC classification number: H01J37/3266 , H01J37/165 , H01J37/32091 , H01J37/321 , H01J37/32541 , H01J37/32568 , H01J37/32596 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J2237/002 , H01J2237/327 , H01J2237/332 , H01J2237/334 , Y02C20/30
Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。
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公开(公告)号：US11251067B2
公开(公告)日：2022-02-15
申请号：US16396181
申请日：2019-04-26
Applicant: Applied Materials, Inc.
Inventor： Brian T. West , Miroslav Gelo , Yan Rozenzon , Roger M. Johnson , Mark Covington , Soundarrajan Jembulingam , Simon Nicholas Binns , Vivek Vinit
Abstract: Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.
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公开(公告)号：US11114289B2
公开(公告)日：2021-09-07
申请号：US15432590
申请日：2017-02-14
Applicant: Applied Materials, Inc.
Inventor： Michael S. Cox , Lara Hawrylchak , Brian T. West
Abstract: Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.
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