公开(公告)号：US20140222188A1

公开(公告)日：2014-08-07

申请号：US14246801

申请日：2014-04-07

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: G06F17/50

CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract translation: 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

公开(公告)号：US11199605B2

公开(公告)日：2021-12-14

申请号：US15867372

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/00 ,  B24B37/04 ,  B24B37/005 ,  C09G1/02 ,  H01L21/67 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US20180203090A1

公开(公告)日：2018-07-19

申请号：US15867543

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Tzu-Yu Liu

IPC: G01R35/00 ,  C09G1/02 ,  B24B37/005 ,  B24B37/04

CPC classification number: G01R35/005 ,  B24B37/005 ,  B24B37/042 ,  C09G1/00 ,  C09G1/02

Abstract: A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values.

公开(公告)号：US09754846B2

公开(公告)日：2017-09-05

申请号：US14312503

申请日：2014-06-23

Applicant: Applied Materials, Inc.

Inventor： Wei Lu ,  Zhefu Wang ,  Zhihong Wang ,  Hassan G. Iravani ,  Dominic J. Benvegnu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Wen-Chiang Tu

IPC: G06F19/00 ,  H01L21/8242 ,  H01L21/66 ,  B24B37/04 ,  B24B37/013 ,  H01L21/321

CPC classification number: H01L22/26 ,  B24B37/013 ,  B24B37/04 ,  H01L21/3212 ,  H01L22/14

Abstract: In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.

公开(公告)号：US09205527B2

公开(公告)日：2015-12-08

申请号：US13791694

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Tzu-Yu Liu ,  Ingemar Carlsson ,  Hassan G. Iravani ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Doyle E. Bennett

IPC: B24B37/013 ,  B24B37/04 ,  B24B7/22

CPC classification number: B24B37/013 ,  B24B7/228 ,  B24B37/048

Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

Abstract translation: 一种化学机械抛光衬底的方法包括在抛光工位上抛光衬底上的层，在抛光站处用抛光工位进行抛光监测层，原位监测系统监测细长区域，并产生一个 计算所述细长区域的主轴与所述衬底的边缘的切线之间的角度，基于所述角度修改所测量的信号以产生修改的信号，以及至少一个检测抛光终点或修改 基于修改信号的抛光参数。

公开(公告)号：US20150224623A1

公开(公告)日：2015-08-13

申请号：US14179297

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G. Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC: B24B49/10 ,  B24B49/02 ,  B24B49/14 ,  B24B37/013

CPC classification number: B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.

Abstract translation: 其中，描述了在抛光过程中控制抛光的方法。 该方法包括在时间t从原位监测系统接收经历抛光的基底的导电层的厚度（t）的测量; 在时间t接收与导电层相关的测量温度T（t）; 在测量温度T（t）下计算导电层的电阻率r r; 使用计算的电阻率r来调整厚度的测量值以产生调整的测量厚度; 以及基于所调整的测量厚度检测抛光终点或抛光参数的调整。

公开(公告)号：US20150118766A1

公开(公告)日：2015-04-30

申请号：US14066571

申请日：2013-10-29

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: H01L21/66 ,  B24B37/013 ,  B24B49/10 ,  H01L21/321

CPC classification number: B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

Abstract translation: 控制抛光的方法包括：在第一抛光台处抛光衬底，用第一涡流监测系统监测衬底以产生第一信号，确定第一信号的结束值，以便在第一抛光站抛光衬底 抛光站，确定第一抛光站的第一温度，在第二抛光站抛光衬底，用第二涡流监测系统监测衬底以产生第二信号，确定第二信号的起始值以开始 在所述第二研磨站处抛光所述基板，基于所述结束值，所述起始值和所述第一温度确定所述第二抛光站的增益，以及基于所述第二信号和所述增益来计算第三信号。

公开(公告)号：US10589397B2

公开(公告)日：2020-03-17

申请号：US15424670

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: B24B37/013 ,  B24B37/04 ,  H01L21/66 ,  B65B1/36 ,  H01L21/306

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

公开(公告)号：US10556315B2

公开(公告)日：2020-02-11

申请号：US16240576

申请日：2019-01-04

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

IPC: B24B37/013 ,  H01L21/66 ,  H01L21/321 ,  B24B49/10 ,  H01L21/67

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

公开(公告)号：US10427272B2

公开(公告)日：2019-10-01

申请号：US15710533

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Kevin Lin ,  Ingemar Carlsson ,  Shih-Haur Shen ,  Tzu-Yu Liu

IPC: B24B49/02 ,  B24B47/10 ,  B24B37/013 ,  B24B37/10 ,  B24B37/20 ,  B24B37/22 ,  B24B49/04

Abstract: A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.